Abstract: A wafer including a mask on one face and at least one layer on an opposite face, wherein the mask has at least one scribeline which overlies at least a portion of the opposite face which is substantially free of the at least one layer is described. Also described is a method of preparing a pellicle, the method including: providing a wafer having a mask on one face and at least one layer on an opposite face, defining a scribeline in the mask, and selectively removing a portion of the at least one layer which at least partially overlies the scribeline as well as a method of preparing a pellicle, the method including: providing a pellicle core, and removing at least some material from at least one face of the pellicle core in a non-oxidising environment. In any aspect, the pellicle may include a metal nitride layer.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

Abstract: A pellicle for a lithographic apparatus, the pellicle including nitridated metal silicide or nitridated silicon as well as a method of manufacturing the same. Also disclosed is the use of a nitridated metal silicide or nitridated silicon pellicle in a lithographic apparatus. Also disclosed is a pellicle for a lithographic apparatus including at least one compensating layer selected and configured to counteract changes in transmissivity of the pellicle upon exposure to EUV radiation as well as a method of controlling the transmissivity of a pellicle and a method of designing a pellicle.

Abstract: A lithographic apparatus has an object, the object includes: a substrate and optionally a lower layer on the substrate; an upper layer; and an intermediate layer between the upper layer and the substrate, wherein a bond strength between the intermediate layer and the substrate or lower layer is greater than a bond strength between the intermediate layer and the upper layer and the intermediate layer has a Young's Modulus and/or a Poisson ratio within 20% of that of the upper layer.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Abstract: A catalyst including: a first layer including a transition metal; a base layer; and an interlayer, wherein the interlayer is disposed between the base layer and the first layer is disclosed. Also disclosed are methods for preparing a catalyst as well as for synthesizing graphene, a pellicle produced using the catalyst or methods disclosed herein, as well as a lithography apparatus including such a pellicle.

Abstract: A pellicle frame for supporting a pellicle, the frame having a first surface and a second surface opposite the first surface, and a structure provided between the first and the second surfaces, wherein the first and second surfaces and the structure at least partially define at least one volume therebetween that is devoid of the material that forms the frame.

Abstract: A lithographic apparatus comprising a projection system configured to project a patterned radiation beam to form an exposure area on a substrate, a cooling apparatus located in use above the substrate adjacent to the exposure area, the cooling apparatus being configured to remove heat from the substrate during use, a plasma vessel located below the cooling apparatus with its opening facing towards the cooling apparatus, and a gas supply for supplying gas to the plasma vessel and an aperture for receipt of a radiation beam. In use, supplied gas and a received radiation beam react to form a plasma within the plasma vessel that is directed towards a surface of the cooling apparatus which faces the opening of the plasma vessel.

Abstract: A pellicle assembly is disclosed that has a pellicle frame defining a surface onto which a pellicle is to be attached. The pellicle assembly includes one or more three-dimensional expansion structures that allow the pellicle to expand under stress. There is also disclosed a pellicle assembly for a patterning device, the pellicle assembly including one or more actuators for moving the pellicle assembly towards and way from the patterning device.

Abstract: A method of manufacturing a pellicle for a lithographic apparatus, the method including locally heating the pellicle using radiative heating, and depositing coating material simultaneously on both sides of the pellicle, and pellicles manufactured according to this method. Also disclosed is the use of a multilayer graphene pellicle with a double-sided hexagonal boron nitride coating in a lithographic apparatus.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle comprising at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle. At least one breakage region comprises a region of the pellicle which has a reduced thickness when compared to surrounding regions of the pellicle.

Abstract: A sensor mark including: a substrate having: a deep ultra violet (DUV) radiation absorbing layer including a first material which substantially absorbs DUV radiation; and a protecting layer including a second material, wherein: the DUV radiation absorbing layer has a through hole in it; the protecting layer is positioned, in plan, in the through hole and the protecting layer in the through hole has a patterned region having a plurality of through holes; and the second material is more noble than the first material.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle includes at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle.

Abstract: Membranes for EUV lithography are disclosed. In one arrangement, a membrane has a stack having layers in the following order: a first capping layer including an oxide of a first metal; a base layer including a compound having a second metal and an additional element selected from the group consisting of Si, B, C and N; and a second capping layer including an oxide of a third metal, wherein the first metal is different from the second metal and the third metal is the same as or different from the first metal.

Abstract: Methods of manufacturing a pellicle for a lithographic apparatus including a method involving depositing at least one graphene layer on a planar surface of a substrate. The substrate has a first substrate portion and a second substrate portion. The method further includes removing the first substrate portion to form a freestanding membrane from the at least one graphene layer. The freestanding membrane is supported by the second substrate portion.

Abstract: A pellicle suitable for use with a patterning device for a lithographic apparatus. The pellicle includes at least one breakage region which is configured to preferentially break, during normal use in a lithographic apparatus, prior to breakage of remaining regions of the pellicle.