Patents by Inventor Maximilian Krug

Maximilian Krug has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor device having a copper element and method of forming a semiconductor device having a copper element
    Patent number: 10446469
    Abstract: A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.
    Type: Grant
    Filed: July 22, 2016
    Date of Patent: October 15, 2019
    Assignee: Infineon Technologies AG
    Inventors: Thomas Detzel, Johann Gross, Robert Illing, Maximilian Krug, Sven Gustav Lanzerstorfer, Michael Nelhiebel, Werner Robl, Michael Rogalli, Stefan Woehlert
  • Semiconductor Device Having a Copper Element and Method of Forming a Semiconductor Device Having a Copper Element
    Publication number: 20160329263
    Abstract: A semiconductor device includes a base element and a copper element over the base element. The copper element includes a layer stack having at least two copper layers and at least one intermediate conductive layer of a material different from copper. The at least two copper layers and the at least one intermediate conductive layer are alternately stacked over each other.
    Type: Application
    Filed: July 22, 2016
    Publication date: November 10, 2016
    Inventors: Thomas Detzel, Johann Gross, Robert Illing, Maximilian Krug, Sven Gustav Lanzerstorfer, Michael Nelhiebel, Werner Robl, Michael Rogalli, Stefan Woehlert
  • Integrated circuit and method of forming an integrated circuit
    Patent number: 9418937
    Abstract: An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 ?m and a ratio of average grain size to thickness of less than 0.7.
    Type: Grant
    Filed: December 9, 2011
    Date of Patent: August 16, 2016
    Assignee: Infineon Technologies AG
    Inventors: Thomas Detzel, Johann Gross, Robert Illing, Maximilian Krug, Sven Gustav Lanzerstorfer, Michael Nelhiebel, Werner Robl, Michael Rogalli, Stefan Woehlert
  • Porous Metal Coating
    Publication number: 20140242374
    Abstract: Various methods, apparatuses and devices relate to porous metal layers on a substrate which are three-dimensionally coated. In one embodiment, a porous metal layer is deposited over a substrate. The porous metal layer can be three-dimensionally coated with a coating material.
    Type: Application
    Filed: February 22, 2013
    Publication date: August 28, 2014
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Johann Strasser, Thomas Kunstmann, Manfred Frank, Werner Robl, Maximilian Krug, Simon Faiss, Matthias Mueller
  • Integrated Circuit and Method of Forming an Integrated Circuit
    Publication number: 20130147047
    Abstract: An integrated circuit includes a base element and a copper element over the base element, the copper element having a thickness of at least 5 ?m and a ratio of average grain size to thickness of less than 0.7.
    Type: Application
    Filed: December 9, 2011
    Publication date: June 13, 2013
    Applicant: INFINEON TECHNOLOGIES AG
    Inventors: Thomas Detzel, Johann Gross, Robert Illing, Maximilian Krug, Sven Gustav Lanzerstorfer, Michael Nelhiebel, Werner Robl, Michael Rogalli, Stefan Woehlert