Patents by Inventor Maxwell W. Lippitt, III

Maxwell W. Lippitt, III has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Temperature optimization of a physical vapor deposition process to prevent extrusion into openings
    Patent number: 7033931
    Abstract: A physical vapor deposition process for maintaining the wafer below a critical temperature. The rate at which material particles are sputtered from the target and thus deposited on the wafer is controllable in response to power supplied to the target. Maintaining a desired deposition rate maintains the wafer temperature below the critical temperature.
    Type: Grant
    Filed: August 1, 2003
    Date of Patent: April 25, 2006
    Assignee: Agere Systems Inc.
    Inventors: Maxwell W. Lippitt, III, Craig G. Clabough, Joseph W. Buckfeller, Timothy J. Daniel
  • Laser trimmed integrated circuit
    Patent number: 5235205
    Abstract: A method including covering the area to be laser trimmed with a first insulative layer having a thickness sufficiently thin that a layer can trim the area through the first insulative layer. An etch stop is formed on the first insulative layer over the area to be trimmed and covered with a second insulative layer. A portion of the second insulative layer is etched to expose the etch stop and a portion of the etch stop is then removed to expose a portion of the first insulative layer and laser trimming is conducted through the exposed first insulative layer. The etch stop is part of a first level of interconnects made of the same material and simultaneously with the etch stop. The area to be trimmed is part of a second level of contacts that interconnect another second material.
    Type: Grant
    Filed: March 17, 1992
    Date of Patent: August 10, 1993
    Assignee: Harris Corporation
    Inventor: Maxwell W. Lippitt, III
  • Method of laser trimming
    Patent number: 5096850
    Abstract: A method including covering the area to be laser trimmed with a first insulative layer having a thickness sufficiently thin that a layer can trim the area through the first insulative layer. An etch stop is formed on the first insulative layer over the area to be trimmed and covered with a second insulative layer. A portion of the second insulative layer is etched to expose the etch stop and a portion of the etch stop is then removed to expose a portion of the first insulative layer and laser trimming is conducted through the exposed first insulative layer. The etch stop is part of a first level of interconnects made of the same material and simultaneously with the etch stop. The area to be trimmed is part of a second level of contacts that interconnect another second material.
    Type: Grant
    Filed: April 23, 1991
    Date of Patent: March 17, 1992
    Assignee: Harris Corporation
    Inventor: Maxwell W. Lippitt, III