Patents by Inventor Mayank Sahni

Mayank Sahni has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10026829
    Abstract: Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body.
    Type: Grant
    Filed: February 16, 2017
    Date of Patent: July 17, 2018
    Assignee: Intel Corporation
    Inventors: Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros, Patrick H. Keys, Seiyon Kim, Kelin J. Kuhn, Aaron D. Lilak, Rafael Rios, Mayank Sahni
  • Publication number: 20170162676
    Abstract: Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body.
    Type: Application
    Filed: February 16, 2017
    Publication date: June 8, 2017
    Inventors: Annalisa CAPPELLANI, Stephen M. CEA, Tahir GHANI, Harry GOMEZ, Jack T. KAVALIEROS, Patrick H. KEYS, Seiyon KIM, Kelin J. KUHN, Aaron D. LILAK, Rafael RIOS, Mayank SAHNI
  • Patent number: 9608059
    Abstract: Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body.
    Type: Grant
    Filed: December 20, 2011
    Date of Patent: March 28, 2017
    Assignee: Intel Corporation
    Inventors: Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros, Patrick H. Keys, Seiyon Kim, Kelin J. Kuhn, Aaron D. Lilak, Rafael Rios, Mayank Sahni
  • Publication number: 20130320455
    Abstract: Semiconductor devices with isolated body portions are described. For example, a semiconductor structure includes a semiconductor body disposed above a semiconductor substrate. The semiconductor body includes a channel region and a pair of source and drain regions on either side of the channel region. An isolation pedestal is disposed between the semiconductor body and the semiconductor substrate. A gate electrode stack at least partially surrounds a portion of the channel region of the semiconductor body.
    Type: Application
    Filed: December 20, 2011
    Publication date: December 5, 2013
    Inventors: Annalisa Cappellani, Stephen M. Cea, Tahir Ghani, Harry Gomez, Jack T. Kavalieros, Patrick H. Keys, Seiyon Kim, Kelin J. Kuhn, Aaron D. Lilak, Rafael Rios, Mayank Sahni