Patents by Inventor Mayuko Fudeta
Mayuko Fudeta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9530932Abstract: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.Type: GrantFiled: May 26, 2015Date of Patent: December 27, 2016Assignee: Sharp Kabushiki KaishaInventors: Mayuko Fudeta, Satoshi Komada, Ryu Kaihara
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Patent number: 9331245Abstract: Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each contain A1, the average A1 composition of the p-type nitride semiconductor layer 1 is equivalent to the average A1 composition of the p-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3 has a smaller band gap than the p-type nitride semiconductor layer 2, the p-type impurity concentration of the p-type nitride semiconductor layer 2 and the p-type impurity concentration of the p-type nitride semiconductor layer 3 are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1, and a method for producing same.Type: GrantFiled: April 29, 2014Date of Patent: May 3, 2016Assignee: SHARP KABUSHIKI KAISHAInventors: Mayuko Fudeta, Eiji Yamada
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Publication number: 20150255673Abstract: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.Type: ApplicationFiled: May 26, 2015Publication date: September 10, 2015Applicant: Sharp Kabushiki KaishaInventors: Mayuko FUDETA, Satoshi KOMADA, Ryu KAIHARA
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Publication number: 20150214424Abstract: A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.Type: ApplicationFiled: April 10, 2015Publication date: July 30, 2015Applicant: Sharp Kabushiki KaishaInventors: Mayuko FUDETA, Atsuo TSUNODA
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Patent number: 9070805Abstract: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.Type: GrantFiled: June 26, 2012Date of Patent: June 30, 2015Assignee: Sharp Kabushiki KaishaInventors: Mayuko Fudeta, Satoshi Komada, Ryu Kaihara
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Patent number: 9029884Abstract: A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.Type: GrantFiled: September 12, 2012Date of Patent: May 12, 2015Assignee: Sharp Kabushiki KaishaInventors: Mayuko Fudeta, Atsuo Tsunoda
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Publication number: 20140231840Abstract: Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each contain Al, the average Al composition of the p-type nitride semiconductor layer 1 is equivalent to the average Al composition of the p-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3 has a smaller band gap than the p-type nitride semiconductor layer 2, the p-type impurity concentration of the p-type nitride semiconductor layer 2 and the p-type impurity concentration of the p-type nitride semiconductor layer 3 are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1, and a method for producing same.Type: ApplicationFiled: April 29, 2014Publication date: August 21, 2014Applicant: Sharp Kabushiki KaishaInventors: Mayuko FUDETA, Eiji YAMADA
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Patent number: 8742440Abstract: Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each contain Al, the average Al composition of the p-type nitride semiconductor layer 1 is equivalent to the average Al composition of the p-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3 has a smaller band gap than the p-type nitride semiconductor layer 2, the p-type impurity concentration of the p-type nitride semiconductor layer 2 and the p-type impurity concentration of the p-type nitride semiconductor layer 3 are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1, and a method for producing same.Type: GrantFiled: February 17, 2011Date of Patent: June 3, 2014Assignee: Sharp Kabushiki KaishaInventors: Mayuko Fudeta, Eiji Yamada
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Patent number: 8569776Abstract: A nitride-based semiconductor light-emitting device and a manufacturing method thereof are provided. The nitride-based light-emitting device includes a first conductivity type nitride-based semiconductor layer, a light-emitting layer and a second conductivity type nitride-based semiconductor layer, that are successively layered above a translucent base. A first conductivity type electrode layer is electrically connected to the first conductivity type nitride-based semiconductor layer, and a second conductivity type electrode layer is electrically connected to the second conductivity type nitride-based semiconductor layer.Type: GrantFiled: April 28, 2009Date of Patent: October 29, 2013Assignee: Sharp Kabushiki KaishaInventors: Mayuko Fudeta, Toshio Hata
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Publication number: 20130001634Abstract: A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.Type: ApplicationFiled: September 12, 2012Publication date: January 3, 2013Applicant: SHARP KABUSHIKI KAISHAInventors: Mayuko FUDETA, Atsuo Tsunoda
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Publication number: 20130001637Abstract: A nitride semiconductor light-emitting device has an n-type nitride semiconductor layer, a lower light-emitting layer, an upper light-emitting layer, and a p-type nitride semiconductor layer in this order. The lower light-emitting layer is formed by alternately stacking a plurality of lower well layers, and a lower barrier layer sandwiched between the lower well layers and having a large bandgap than the lower well layer. The upper light-emitting layer is formed by alternately stacking a plurality of upper well layers, and an upper barrier layer sandwiched between the upper well layers and having a larger bandgap than the upper well layer. Thickness of the upper barrier layer in the upper light-emitting layer is smaller than thickness of the lower barrier layer in the lower light-emitting layer.Type: ApplicationFiled: June 27, 2012Publication date: January 3, 2013Applicant: SHARP KABUSHIKI KAISHAInventor: Mayuko FUDETA
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Publication number: 20130001509Abstract: A nitride semiconductor light-emitting device has a first conductive-type nitride semiconductor layer, a superlattice layer provided on the first conductive-type nitride semiconductor layer, an active layer provided on the superlattice layer, and a second conductive-type nitride semiconductor layer provided on the active layer. An average carrier concentration of the superlattice layer is higher than an average carrier concentration of the active layer.Type: ApplicationFiled: June 26, 2012Publication date: January 3, 2013Applicant: Sharp Kabushiki KaishaInventors: Mayuko FUDETA, Satoshi KOMADA, Ryu KAIHARA
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Publication number: 20120319080Abstract: Disclosed is a nitride semiconductor light-emitting element comprising a p-type nitride semiconductor layer 1, a p-type nitride semiconductor layer 2, and a p-type nitride semiconductor layer 3 placed in order above a nitride semiconductor active layer, wherein the p-type nitride semiconductor layer 1 and p-type nitride semiconductor layer 2 each contain A1, the average A1 composition of the p-type nitride semiconductor layer 1 is equivalent to the average A1 composition of the p-type nitride semiconductor layer 2, the p-type nitride semiconductor layer 3 has a smaller band gap than the p-type nitride semiconductor layer 2, the p-type impurity concentration of the p-type nitride semiconductor layer 2 and the p-type impurity concentration of the p-type nitride semiconductor layer 3 are both lower than the p-type impurity concentration of the p-type nitride semiconductor layer 1, and a method for producing same.Type: ApplicationFiled: February 17, 2011Publication date: December 20, 2012Inventors: Mayuko Fudeta, Eiji Yamada
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Publication number: 20120305934Abstract: A nitride semiconductor light emitting element has: a substrate for growth; an n-type nitride semiconductor layer formed on the substrate for growth; a light emitting layer formed on the n-type nitride semiconductor layer; and a p-type nitride semiconductor layer formed on the light emitting layer, wherein pipe holes are formed at a density of 5000 pipe holes/cm2 or less, each of which extends substantially vertically from a surface of the n-type nitride semiconductor layer on the light emitting layer side toward the substrate and has a diameter of 2 to 200 nm.Type: ApplicationFiled: May 15, 2012Publication date: December 6, 2012Applicant: Sharp Kabushiki KaishaInventor: Mayuko FUDETA
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Patent number: 8324639Abstract: A nitride semiconductor light emitting device includes a conductive substrate, a first metal layer, a second conductivity-type semiconductor layer, an emission layer, and a first conductivity-type semiconductor layer in this order. The nitride semiconductor light emitting device additionally has an insulating layer covering at least side surfaces of the second conductivity-type semiconductor layer, the emission layer and the first conductivity-type semiconductor layer. A method of manufacturing the same is provided. The nitride semiconductor light emitting device may further include a second metal layer. Thus, a reliable nitride semiconductor light emitting device and a method of manufacturing the same are provided in which short-circuit at the PN junction portion and current leak is reduced as compared with the conventional examples.Type: GrantFiled: August 6, 2007Date of Patent: December 4, 2012Assignee: Sharp Kabushiki KaishaInventors: Mayuko Fudeta, Atsuo Tsunoda
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Patent number: 8319243Abstract: A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.Type: GrantFiled: October 11, 2011Date of Patent: November 27, 2012Assignee: Sharp Kabushiki KaishaInventor: Mayuko Fudeta
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Patent number: 8211726Abstract: An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.Type: GrantFiled: February 16, 2007Date of Patent: July 3, 2012Assignee: Sharp Kabushiki KaishaInventors: Satoshi Komada, Mayuko Fudeta
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Patent number: 8154035Abstract: In a nitride semiconductor light emitting element, a light transmitting substrate has an upper surface on which a nitride semiconductor layer including at least a light emitting layer is formed. On the upper surface of the light transmitting substrate, recess regions and rise regions are formed. One of each of the recess regions and each of the rise regions is formed by a polygon having at least one apex having an interior angle of 180° or greater when viewed in a planar view. The other of each of the recess regions and each of the rise regions is formed not to be connected to one another in a straight line when viewed in a planar view. A nitride semiconductor light emitting element having such a configuration has excellent light extraction efficiency and can be manufactured at a moderate cost.Type: GrantFiled: December 18, 2009Date of Patent: April 10, 2012Assignee: Sharp Kabushiki KaishaInventor: Mayuko Fudeta
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Patent number: 8119428Abstract: An object is to provide a method of manufacturing a nitride semiconductor light emitting device having high light emission output and allowing decrease in forward voltage (Vf). The invention is directed to a method of manufacturing a nitride semiconductor light emitting device including at least an n-type nitride semiconductor, a p-type nitride semiconductor and an active layer formed between the n-type nitride semiconductor and the p-type nitride semiconductor, wherein the n-type nitride semiconductor includes at least an n-type contact layer and an n-side GaN layer, the n-side GaN layer consists of a single or a plurality of undoped and/or n-type layers, and the method includes the step of forming the n-side GaN layer by organic metal vapor deposition with the growth temperature set within the range of 500 to 1000° C., such that the n-side GaN layer is formed between the n-type contact layer and the active layer.Type: GrantFiled: February 16, 2007Date of Patent: February 21, 2012Assignee: Sharp Kabushiki KaishaInventors: Satoshi Komada, Mayuko Fudeta
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Publication number: 20120032144Abstract: A nitride semiconductor light-emitting device including a reflecting layer made of a dielectric material, a transparent conductive layer, a p-type nitride semiconductor layer, a light emitting layer and an n-type nitride semiconductor layer in this order and a method of manufacturing the same are provided. The transparent conductive layer is preferably made of a conductive metal oxide or an n-type nitride semiconductor, and the reflecting layer made of a dielectric material preferably has a multilayer structure obtained by alternately stacking a layer made of a dielectric material having a high refractive index and a layer made of a dielectric material having a low refractive index.Type: ApplicationFiled: October 11, 2011Publication date: February 9, 2012Inventor: Mayuko Fudeta