Abstract: A toner comprising a toner particle, the toner particle comprising: a binder resin and a wax; wherein the toner particle has a toner core particle and a protrusion present on the surface of the toner core particle, the protrusion comprises an organosilicon polymer, where in cross-sectional observation of the toner particle, a line segment connecting both ends of an interface between the toner core particle and the protrusion is defined as a reference line, and the length of the reference line is denoted by W (nm), and a maximum length of the protrusion in the toner core particle direction from the reference line in the normal direction of the reference line is defined as a maximum penetration depth I (nm), W and I satisfy I/W?0.050, and Young's modulus of the protrusion E1 is 1.00 to 3.90 GPa.

Abstract: A toner comprising a toner particle, wherein the toner particle comprises a toner core particle, and the toner core particle comprises a binder resin; the binder resin comprises a resin A; the resin A comprises a monomer unit M1 having a specific structure in a specific amount, and a monomer unit M2 comprising an organosilicon polymer segment in a specific amount; the organosilicon polymer segment has a T3 unit structure and a T2 unit structure; in a DD/MAS measurement of the resin A by solid-state 29Si-NMR, a proportion of a peak area corresponding to a silicon atom with the T3 unit structure, and a proportion of a peak area corresponding to a silicon atom with the T2 unit structure satisfy a specific relationship; and the weight-average molecular weight Mw of a tetrahydrofuran-soluble fraction of the resin A lies within a specific range.

Abstract: A toner comprising a toner particle, wherein the toner particle comprises a binder resin and wax, and where with respect to a slope X of a straight line obtained by performing a micro-compression test on the toner, obtaining a relationship of a deformation amount (?m) to a load (mN), calculating a percentage deformation (%), which is a ratio of the deformation amount to a particle diameter of the particle measured, plotting a load (mN)?percentage deformation (%) plot, and then using all the points plotted within the range in which the percentage deformation was 15% or less of the particle diameter of the particle for approximation by a least squares method, the slope X measured at 30° C. is denoted by X30 and the slope X measured at 45° C. is denoted by X45, the X30 is 25 to 300, and the X45 is 400 to 1000.

Abstract: A toner, comprising a toner particle, wherein the toner particle has a core-shell structure comprising a core particle and a shell on a surface of the core particle, the shell comprises a polymer having monomer units represented by Formula (I) below, the toner comprises a specific external additive A, the external additive A is at least one selected from the group consisting of silica fine particles and organosilicon polymer fine particles, and a ratio of coverage of a surface of the toner particle with the external additive A is 0.3 area % or higher: in Formula (I), L1 represents —COO(CH2)n— (where n is an integer of 1 to 10), and carbonyl of L1 is bonded to a carbon atom of a main chain; R1 represents hydrogen or a methyl group; and R2 to R10 represent each independently an alkyl group having 1 to 4 carbon atoms.

Abstract: A toner comprising a toner particle comprising a binder resin, wherein the toner particle comprises a condensation product of an organosilicon compound, in time-of-flight secondary ion mass spectrometry of the toner particle, a normalized intensity of silicon ions derived from the condensation product of the organosilicon compound is from 7.00×10?4 to 3.00×10?2, a normalized intensity of silicon ions after sputtering the toner particle under a specific condition is 6.99×10?4 or lower, the toner comprises a fine particle on the surface of the toner particle, and the fine particle has at least one selected from the group consisting of a specific fine particle of a polyhydric acid metal salt, a strontium titanate fine particle, a titanium oxide fine particle and an aluminum oxide fine particles.

Abstract: The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.

Abstract: The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.

Abstract: The present invention provide an LDD type TFT having excellent properties, particularly for a liquid crystal display unit. For this purpose, a top gate type LDDTFT gate electrode is converted into a two-stage structure by use of a chemical reaction or plating, and furthermore, into a shape in which an upper portion or a lower portion slightly protrudes on the source electrode side, or the drain electrode side relative to the other portions. Impurities are injected by using this electrode having this structure and shape as a mask. Prior to injection of impurities, the gate insulating film is removed, and a Ti film is formed for preventing hydrogen for dilution from coming in. This is also the case with the LDD-TFT on the bottom gate side.

Abstract: A fabrication method for thin film electroluminescent panels including steps of forming a composite film by depositing Ni film on Al film for forming back electrodes and lead-out electrodes, forming a resist pattern on the composite film and etching the composite film into a predetermined pattern so as to form back electrodes and lead-out electrodes using an etchant containing phosphoric acid of 3.5 to 13.0 mol/l, sulphuric acid of 0.1 to 9.0 mol/l, nitric acid of 0.1 to 8.0 mol/l and acetic acid of 0.0 to 8.0 mol/l.

Abstract: A film or sheet material having antibacterial and antifungal activities is obtained by mixing a thermoplastic resin with 2-(4'-thiazolyl)-benzimidazole and N-(fluorodichloromethylthio)-phthalimide, and shaping the resulting mixture, or, alternatively, by coating a base film or sheet material on one side or both sides with a coating material containing a mixture of 2-(4'-thiazolyl)-benzimidazole and N-(fluorodichloromethylthio)-phthalimide, a mixture of 2-(4'-thiazolyl)-benzimidazole and N-dimethyl-N'-phenyl-N'-(fluorodichloromethylthio)-sulfamide, or a mixture of N-(fluorodichloromethylthio)-phthalimide and N-dimethyl-N'-phenyl-N'-(fluorodichloromethylthio)-sulfamide.