Patents by Inventor Mayumi Ogasawara

Mayumi Ogasawara has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Memory component, memory device, and method of operating memory device
    Patent number: 9543514
    Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Grant
    Filed: November 24, 2015
    Date of Patent: January 10, 2017
    Assignee: SONY SEMICONDUCTOR SOLUTIONS CORPORATION
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
  • MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE
    Publication number: 20160079528
    Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Application
    Filed: November 24, 2015
    Publication date: March 17, 2016
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
  • Memory component, memory device, and method of operating memory device
    Patent number: 9240549
    Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Grant
    Filed: March 7, 2014
    Date of Patent: January 19, 2016
    Assignee: SONY CORPORATION
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
  • MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE
    Publication number: 20140183438
    Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Application
    Filed: March 7, 2014
    Publication date: July 3, 2014
    Applicant: Sony Corporation
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
  • Memory component, memory device, and method of operating memory device
    Patent number: 8730709
    Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Grant
    Filed: March 18, 2013
    Date of Patent: May 20, 2014
    Assignee: Sony Corporation
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
  • MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE
    Publication number: 20130240818
    Abstract: A memory component including first and second electrodes with a memory layer therebetween, the memory layer having first and second memory layers, the first memory layer containing aluminum and a chalcogen element of tellurium, the second memory layer between the first memory layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Application
    Filed: March 18, 2013
    Publication date: September 19, 2013
    Applicant: SONY CORPORATION
    Inventors: KAZUHIRO OHBA, SHUICHIRO YASUDA, TETSUYA MIZUGUCHI, KATSUHISA ARATANI, MASAYUKI SHIMUTA, AKIRA KOUCHIYAMA, MAYUMI OGASAWARA
  • Memory component, memory device, and method of operating memory device
    Patent number: 8427860
    Abstract: A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Grant
    Filed: February 1, 2011
    Date of Patent: April 23, 2013
    Assignee: Sony Corporation
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara
  • MEMORY COMPONENT, MEMORY DEVICE, AND METHOD OF OPERATING MEMORY DEVICE
    Publication number: 20110194329
    Abstract: A memory component includes: a first electrode; a memory layer; and a second electrode which are provided in that order, wherein the memory layer includes an ion source layer containing aluminum (Al) together with at least one chalcogen element selected from the group consisting of tellurium (Te), sulfur (S), and selenium (Se), and a resistance variable layer provided between the ion source layer and the first electrode and containing an aluminum oxide and at least one of a transition metal oxide and a transition metal oxynitride having a lower resistance than the aluminum oxide.
    Type: Application
    Filed: February 1, 2011
    Publication date: August 11, 2011
    Applicant: SONY CORPORATION
    Inventors: Kazuhiro Ohba, Shuichiro Yasuda, Tetsuya Mizuguchi, Katsuhisa Aratani, Masayuki Shimuta, Akira Kouchiyama, Mayumi Ogasawara