Abstract: A tunable non-reciprocal frequency limiter with an asymmetric micro-electro-mechanical resonator has two independent transducer ports. One port has a film stack including a 10 nm hafnium zirconium oxide (HZO) and another port has a film stack including a 120 nm aluminum nitride (AlN) film. These film stacks are deposited on top of 70 nm single crystal silicon substrate applying CMOS compatible fabrication techniques. The asymmetric transducer architecture with dissimilar electromechanical coupling coefficients force the resonator into mechanical nonlinearity on actuation with transducer having larger coupling. A proof-of-concept electrically-coupled channel filter is demonstrated with two such asymmetric resonators at ˜253 MHz with individual Qres of ˜870 and a non-reciprocal transmission ratio (NTR) ˜16 dB and BW3 dB of 0.25%.

Abstract: A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators.

Abstract: The structure of a frequency synthesizer for acoustic waves includes an input narrow band transducer in its input arm for receiving an input electric signal at an input frequency, a wide band transducer in its output arm for supplying an output signal; and a perforated region formed of a two dimensional array of cavities disposed between the first and second arms. The first arm contains multiple metal fingers, disposed perpendicular to the first arm and spaced apart from one another at a distance of the wavelength of the input signal to ensure acoustic excitation in the first arm at the input frequency. The second arm contains a single finger to accommodate a non-linear output signal oscillating at a harmonic of the first frequency. The frequency synthesizer can be patterned in aluminum nitride (AlN) in a silicon substrate.

Abstract: The structure of a frequency synthesizer for acoustic waves includes an input narrow band transducer in its input arm for receiving an input electric signal at an input frequency, a wide band transducer in its output arm for supplying an output signal; and a perforated region formed of a two dimensional array of cavities disposed between the first and second arms. The first arm contains multiple metal fingers, disposed perpendicular to the first arm and spaced apart from one another at a distance of the wavelength of the input signal to ensure acoustic excitation in the first arm at the input frequency. The second arm contains a single finger to accommodate a non-linear output signal oscillating at a harmonic of the first frequency. The frequency synthesizer can be patterned in aluminum nitride (AlN) in a silicon substrate.

Abstract: A tunable non-reciprocal frequency limiter with an asymmetric micro-electro-mechanical resonator has two independent transducer ports. One port has a film stack including a 10 nm hafnium zirconium oxide (HZO) and another port has a film stack including a 120 nm aluminum nitride (AlN) film. These film stacks are deposited on top of 70 nm single crystal silicon substrate applying CMOS compatible fabrication techniques. The asymmetric transducer architecture with dissimilar electromechanical coupling coefficients force the resonator into mechanical nonlinearity on actuation with transducer having larger coupling. A proof-of-concept electrically-coupled channel filter is demonstrated with two such asymmetric resonators at ˜253 MHz with individual Qres of ˜870 and a non-reciprocal transmission ratio (NTR) ˜16 dB and BW3dB of 0.25%.

Abstract: A nano-mechanical acoustical resonator is designed and fabricated with CMOS compatible techniques to apply to mm-wave RF front-ends and 5G wireless communication systems which have extreme small scale and integrated in 3D sensors and actuators. Thin hafnium zirconium oxide (HZO) films are engineered with atomic layer deposition (ALD) to demonstrate large piezoelectric ferroelectric properties (piezoelectric coefficient e31,HZO?23e31,AlN. Various electrical and optical characterization schemes are also used as test-vehicles to characterize ferroelectric and piezoelectric properties, including isolated 10 nm HZO- and 120 nm AlN-transduction ports. The low-temperature and truly conformal nature of ALD process of HZO offers substantial advantages over conventional magnetronsputtered/MOCVD films, including CMOS-compatibility and sidewall transducer integration.