Abstract: An electronic field enhancement element includes: a metal layer; a dielectric layer provided on the metal layer; and a plurality of fine metal structures provided on the dielectric layer. A refractive index n of the dielectric layer satisfies n?=n+i? and is in a range of 1?n<1.46, wherein a complex refractive index of the dielectric layer is n?, an imaginary unit is i, and an extinction coefficient is ?.

Abstract: An electronic field enhancement element includes: a metal layer; a dielectric layer provided on the metal layer; and a plurality of fine metal structures provided on the dielectric layer. A refractive index n of the dielectric layer satisfies n?=n+i? and is in a range of 1?n<1.46, wherein a complex refractive index of the dielectric layer is n?, an imaginary unit is i, and an extinction coefficient is ?.

Abstract: An electric-field enhancement element includes a propagating surface plasmon generating unit; a localized surface plasmon generating unit that is formed on an upper portion of a surface of a substrate and includes a plurality of fine metal structure bodies; and a metal layer that is formed on an upper portion of the substrate surface and propagates a propagating surface plasmon generated by the propagating surface plasmon generating unit to the localized surface plasmon generating unit in a direction along the substrate surface, in which the fine metal structure body includes a plurality of fine metal structures which are arranged to be separated from each other in a normal direction of the substrate surface.

Abstract: An analysis apparatus includes an electric field enhancing element including a metallic layer, a transmissive layer on the metallic layer and transmitting excitation light, and metallic particles on the transmissive layer with first and second pitches in first and second directions; a light source irradiating the element with first direction linearly polarized light, second direction linearly polarized light, and/or circularly polarized light as the excitation light; and a detector detecting light from the element. The pitches are selected relative to the pitch of a diffraction grating. The thickness of the transmissive layer is selected relative to the wavelength of the excitation light.

Abstract: An electronic field enhancement element includes: a metal layer; a dielectric layer provided on the metal layer; and a plurality of fine metal structures provided on the dielectric layer. A refractive index n of the dielectric layer satisfies n?=n+i? and is in a range of 1?n<1.46, wherein a complex refractive index of the dielectric layer is n?, an imaginary unit is i, and an extinction coefficient is ?.

Abstract: An analysis apparatus includes an electric field enhancing element including a metallic layer, a transmissive layer on the metallic layer and transmitting excitation light, and metallic particles on the transmissive layer with first and second pitches in first and second directions; a light source irradiating the element with first direction linearly polarized light, second direction linearly polarized light, and/or circularly polarized light as the excitation light; and a detector detecting light from the element. The pitches are selected relative to the pitch of a diffraction grating. The thickness of the transmissive layer is selected relative to the wavelength of the excitation light.

Abstract: An analysis apparatus includes an electric field enhancing element including a metallic layer, a light-transmissive layer, and a plurality of metallic particles arranged in a first direction and a second direction intersecting with the first direction; a light source irradiating the electric field enhancing element with at least one of linearly polarized light polarized in the first direction, linearly polarized light polarized in the second direction, and circularly polarized light; and a detector, in which localized surface plasmon and propagating surface plasmon are electromagnetically interacted, and when a thickness of the light-transmissive layer is G [nm], an effective reflective index of the light-transmissive layer is neff, and a wavelength of the excitation light is ?i [nm], a relationship of the following expression (1) is satisfied. 20 [nm]<G·(neff/1.

Abstract: An analysis device is provided with an optical element having a structure in which the end portions of the upper surface and the lower surface of second metal layers are capable of having contact with a measurement object, and hotspots are exposed on the element surfaces. Therefore, it is easy for the substance that is the analysis object to be located at the hotspot. Further, since a first metal layer is disposed in the vicinity of the second metal layers, a resonance effect of a localized surface plasmon and a propagating surface plasmon can be generated. Therefore, the enhancement degree of light based on the plasmon is extremely high, and it is possible to analyze the substance with extremely high sensitivity.

Abstract: An analysis device includes an optical element which includes a metal layer, a light transmitting layer provided on the metal layer to transmit light, and a plurality of metal particles arranged at a first interval P1 in a first direction and arranged at a second interval P2 in a second direction intersecting the first direction on the light transmitting layer, P1<P2, a light source which irradiates incident light incident on the optical element, and a detector which detects light emitted from the optical element. Linearly polarized light in the same direction as the first direction and linearly polarized light in the same direction as the second direction are irradiated onto the optical element.