Abstract: In one aspect, a method of forming a silicon layer on a substrate is provided, including the steps providing a substrate; and introducing hydrogen and silane into a chamber containing the substrate such that a layer of silicon is deposited on the substrate; wherein the silane is less than about 99.999% pure. Numerous other aspects are provided.

Abstract: A system for treating flammable effluent gas is provided. The system includes an exhaust conduit to carry the flammable effluent gas to an abatement unit, a control system coupled to the abatement unit to determine an operating parameter of the abatement unit, a bypass valve coupled to the exhaust conduit which is an operative responsive to the monitoring system, and a source of second gas to be mixed with the effluent gas diverted from the abatement unit when the bypass valve is operating in a bypass mode to provide a mixed gas having a flammability lower than the effluent gas. Methods of the invention as well as numerous other aspects are provided.

Abstract: A method of developing an integrated abatement system is provided, including the steps: a) determining whether an integrated abatement system meets a destruction removal efficiency standard wherein the determination includes the steps: i) operating an electronic device manufacturing process tool using a best known method, whereby effluent containing a target species is produced; ii) abating the target species to form abated effluent, using an abatement system which is coupled to the process tool; and iii) calculating a destruction removal efficiency for the target species; and b) modifying the abatement system by altering at least one of a design parameter and an operating parameter of the abatement system to improve the destruction removal efficiency. Numerous other aspects are provided.

Abstract: A substrate coating system is provided which includes a substrate coating chamber; a gas box connected to the coating chamber and adapted to provide reagent gases to the coating chamber; and a reagent reclaim system connected to the substrate coating chamber and the gas box, wherein the reagent reclaim system includes a wet scrubber connected to the coating chamber; a polisher connected to the wet scrubber; and a dryer connected to the polisher and the gas box.

Abstract: A method of operating an electronic device manufacturing system is provided which includes the steps of receiving information with an interface, wherein the information relates to an abatement system, and shutting down a process tool and an abatement tool in response to the information.

Abstract: A substrate processing apparatus comprises a process chamber and an effluent treatment apparatus comprising a hydrogenation reactor, scrubber, combustor, and a controller to operate the process chamber and effluent treatment apparatus. In the hydrogenation reactor, hydrogen-containing gas is used to treat chamber effluent to form a hydrogenated effluent comprising hydrogen chloride gas. A scrubber sprays water through the hydrogenated effluent to dissolve the hydrogen chloride gas. An oxygen-containing gas is added to the treated effluent during a combustion step to further abate the effluent.

Abstract: A substrate processing apparatus exposes a substrate in a process zone of a process chamber to a plasma of a precursor gas comprising a hydrocarbon gas to deposit carbon-doped silicon on the substrate. An effluent comprising unreacted precursor gas and byproducts from the carbon-doped silicon deposition process is exhausted from the process zone and passed into an effluent treatment zone of an effluent treatment reactor. An additive gas comprising an oxygen-containing gas is added to the effluent treatment zone and a plasma is formed of the effluent and additive gas to treat the effluent to reduce the content of unreacted precursor gas and byproduct in the effluent.

Abstract: In some aspects, a method is provided for abating perfluorocarbons (PFCs) in a gaseous waste abatement system having a pre-installed controlled decomposition oxidation (CDO) thermal reaction chamber. The method that includes (1) providing a catalyst bed within the CDO thermal reaction chamber; and (2) introducing a gaseous waste stream into the CDO thermal reaction chamber so as to expose the gaseous waste stream to the catalyst bed. Numerous other aspects are provided.

Abstract: In at least one aspect, a controlled decomposition oxidation (CDO) system is provided for abating perfluorocarbons (PFCs) that includes (1) an upstream portion including a first conduit adapted to convey a gaseous waste stream; (2) a thermal reaction chamber having an inlet coupled to the first conduit, a catalyst bed adapted to abate PFCs, and an outlet; and (3) a downstream portion including a second conduit having a first end coupled to the outlet of the thermal reaction chamber and having a portion, downstream from the first end, positioned proximate to the first conduit. The second conduit is adapted to convey a gaseous waste stream heated within the thermal reaction chamber to enable a transfer of heat energy from the second conduit to the first conduit so as to pre-heat the gaseous waste stream in the first conduit. Numerous other aspects are provided.

Abstract: In some aspects, an apparatus is provided for abating perfluorocarbons (PFCs) in a controlled decomposition oxidation (CDO) thermal reaction chamber. The apparatus includes (1) a cartridge insertable into the thermal reaction chamber having gas-permeable first and second ends and including a catalyst material; and (2) thermally-conductive fixtures positioned within the cartridge. Numerous other aspects are provided.

Abstract: In some aspects, a method is provided for abating perfluorocarbons (PFCs) in a gaseous waste abatement system having a pre-installed controlled decomposition oxidation (CDO) thermal reaction chamber. The method that includes (1) providing a catalyst bed within the CDO thermal reaction chamber; and (2) introducing a gaseous waste stream into the CDO thermal reaction chamber so as to expose the gaseous waste stream to the catalyst bed. Numerous other aspects are provided.

Abstract: In certain aspects, a system is provided for abating perfluorocarbons (PFCs) from a gaseous waste stream that includes (1) a wet scrubber adapted to scrub a gaseous waste stream and having an outlet adapted to discharge a scrubbed gaseous waste stream; and (2) a controlled decomposition oxidation (CDO) system. The CDO system includes a CDO thermal reaction chamber that includes (a) an inlet coupled to the outlet of the wet scrubber; (b) a catalyst bed adapted to abate PFCs within the CDO thermal reaction chamber; and (c) an outlet. Numerous other aspects are provided.

Abstract: An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process, includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.

Abstract: An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process, includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.

Abstract: An effluent abatement system 200 that may be used to abate F2 gas content of effluent exhausted from a process chamber 35, such as effluent from a CVD chamber cleaning process includes a catalytic reactor 250 to reduce the content of F2 in the effluent 100. The system may further include a prescrubber 230 to add reactive gases to the effluent 100 and/or to treat the effluent 100 prior to treatment in the catalytic reactor 250. Alternatively reactive gases can be added to the effluent 100 by a gas source 220.

Abstract: A plasma tube comprising a vacuum sealing ceramic outer tube, a porous ceramic insert disposed on the inside wall of the outer tube, and a source of high frequency radiation, for example, an RF coil wrapped around the tube, to excite gas flowing through the bore of the insert into a plasma. The invention is particularly useful as an exhaust scrubber for oxidizing exhaust gases from a semiconductor processing chamber. A catalyst may be embedded in the porous insert to promote the scrubbing reaction. The invention may also be used in an applicator of a remote plasma source.

Abstract: Silicon carbide films and microcomponents are grown on silicon substrates at surface temperatures between 900 K and 1700 K via C.sub.60 precursors in a hydrogen-free environment. Selective crystalline silicon carbide growth can be achieved on patterned silicon-silicon oxide samples. Patterned SiC films are produced by making use of the high reaction probability of C.sub.60 with silicon at surface temperatures greater than 900 K and the negligible reaction probability for C.sub.60 on silicon dioxide at surface temperatures less than 1250 K.