Abstract: A thin-film transistor structure having a storage-capacitor-on-gate and a black matrix for manufacturing a liquid crystal display is disclosed. A metal layer is deposited and patterned as a black matrix on a glass substrate of the thin-film transistor plate. An insulating layer having a contact hole for contacting the black matrix is formed over the surface of the black matrix and the substrate. An inverted thin-film transistor having a metal gate on the bottom is then fabricated on top of the insulating layer. The thin-film transistor controls an ITO pixel electrode of the liquid crystal display. A gate line including the metal gate of the thin-film transistor is formed over and above a space between two adjacent black matrixes. The gate line is connected to one of the two black matrixes by the contact hole. The other black matrix serves as a light shield element of the ITO pixel electrode.

Abstract: A thin-film transistor structure having a storage-capacitor-on-gate and a black matrix for manufacturing a liquid crystal display is disclosed. A metal layer is deposited and patterned as a black matrix on a glass substrate of the thin-film transistor plate. An insulating layer having a contact hole for contacting the black matrix is formed over the surface of the black matrix and the substrate. An inverted thin-film transistor having a metal gate on the bottom is then fabricated on top of the insulating layer. The thin-film transistor controls an ITO pixel electrode of the liquid crystal display. A gate line including the metal gate of the thin-film transistor is formed over and above a space between two adjacent black matrixes. The gate line is connected to one of the two black matrixes by the contact hole. The other black matrix serves as a light shield element of the ITO pixel electrode.

Abstract: A substrate comprising material that is transparent to the radiation used to activate photoresist is selected. A gate electrode is formed on one surface of the substrate. Then an insulating layer and a layer of N+ silicon are deposited, followed by a coating of negative photoresist. The photoresist is now exposed, but the activating radiation is directed to it through the lower surface of the substrate. This results in a mask that allows a gap to be etched in the N+ silicon that is perfectly aligned with the gate electrode. The structure includes a layer of amorphous silicon together with a suitable protective layer and is completed by a conductive layer that is patterned to form connections to other parts of the circuit. The method depends on the transparency of silicon relative to metal so the wavelength of the light used to expose the photoresist must be taken into account.