Patents by Inventor Melvin Barker McLaurin
Melvin Barker McLaurin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240030380Abstract: In a general aspect, a method for producing an optoelectronic device includes forming a mechanically-compliant layer on a substrate, and forming a second layer, the mechanically-compliant layer being disposed between the second layer and the substrate. The method also includes performing a relaxation operation to facilitate a release of strain energy in the second layer by the mechanically-compliant layer. The mechanically-compliant layer, the second layer and the relaxation operation are configured such that a surface of the second layer has an extended defect density below a predetermined value. The method also includes forming a light-emitting region, the second layer being disposed between the light-emitting region and the substrate. The extended defect density being below the predetermined value results in a leakage resistance in an active region of the light-emitting region that is higher than 10 milliohms per centimeter-squared (mOhm/cm2).Type: ApplicationFiled: July 19, 2023Publication date: January 25, 2024Inventors: Melvin Barker McLaurin, Aurelien Jean Francois David
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Publication number: 20230110324Abstract: In a general aspect, a micro-LED includes a semiconductor mesa having a lateral dimension less than 5 um along a horizontal direction of the micro-LED, and a contact formed on a non-horizontal face of the semiconductor mesa. The semiconductor mesa includes a plurality of quantum wells (QWs), and a p-type semiconductor layer formed between the contact and the plurality of QWs. The contact, the p-type semiconductor layer and the plurality of QWs are configured such that, when the micro-LED is driven at an effective current density less than 50 A/cm2, holes are injected from the contact to the plurality of QWs through the p-type semiconductor layer. The injected holes diffuse laterally in the plurality of QWs over a distance greater than 1 micrometer (?m).Type: ApplicationFiled: October 11, 2022Publication date: April 13, 2023Inventors: Aurelien Jean Francois David, Melvin Barker Mclaurin
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Patent number: 10586891Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.Type: GrantFiled: February 25, 2019Date of Patent: March 10, 2020Assignee: Lumileds LLCInventors: Nathan Fredrick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker Mclaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Publication number: 20190259914Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.Type: ApplicationFiled: February 25, 2019Publication date: August 22, 2019Applicant: Lumileds LLCInventors: Nathan Fredrick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker Mclaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Patent number: 10304997Abstract: A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RA03 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer?1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.Type: GrantFiled: October 27, 2011Date of Patent: May 28, 2019Assignee: Lumileds LLCInventors: Michael Jason Grundmann, Nathan Frederick Gardner, Werner Karl Goetz, Melvin Barker McLaurin, John Edward Epler, Francisco Alexander Leon
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Patent number: 10217901Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.Type: GrantFiled: July 17, 2017Date of Patent: February 26, 2019Assignee: Lumileds LLCInventors: Nathan Fredrick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Patent number: 9991414Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant asubstrate. The III-nitride layer has a bulk lattice constant alayer. In some embodiments, [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.Type: GrantFiled: April 7, 2017Date of Patent: June 5, 2018Assignee: Lumileds LLCInventors: Nathan Frederick Gardner, Melvin Barker McLaurin, Michael Jason Grundmann, Werner Goetz, John Edward Epler, Qi Ye
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Publication number: 20170317237Abstract: Methods and apparatus are described. An apparatus includes a hexagonal oxide substrate and a III-nitride semiconductor structure adjacent the hexagonal oxide substrate. The III-nitride semiconductor structure includes a light emitting layer between an n-type region and a p-type region. The hexagonal oxide substrate has an in-plane coefficient of thermal expansion (CTE) within 30% of a CTE of the III-nitride semiconductor structure.Type: ApplicationFiled: July 17, 2017Publication date: November 2, 2017Applicant: Lumileds LLCInventors: Nathan Fredrick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Publication number: 20170279006Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant asubstrate. The III-nitride layer has a bulk lattice constant alayer. In some embodiments, [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.Type: ApplicationFiled: April 7, 2017Publication date: September 28, 2017Inventors: Nathan Frederick Gardner, Melvin Barker McLaurin, Michael Jason Grundmann, Werner Goetz, John Edward Epler, Qi Ye
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Patent number: 9711687Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.Type: GrantFiled: November 20, 2015Date of Patent: July 18, 2017Assignee: Koninklijke Philips N.V.Inventors: Nathan Frederick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Patent number: 9634181Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate?a layer|)/asubstrate]*100% is no more than 1%.Type: GrantFiled: October 26, 2011Date of Patent: April 25, 2017Assignee: KONINKLIJKE PHILIPS N.V.Inventors: Nathan Frederick Gardner, Melvin Barker McLaurin, Michael Jason Grundmann, Werner Goetz, John Edward Epler, Qi Ye
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Publication number: 20160163927Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.Type: ApplicationFiled: November 20, 2015Publication date: June 9, 2016Inventors: Nathan Frederick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Patent number: 9209359Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.Type: GrantFiled: November 1, 2011Date of Patent: December 8, 2015Assignee: Koninklijke Philips N.V.Inventors: Nathan Frederick Gardner, Werner Karl Goetz, Michael Jason Grundmann, Melvin Barker McLaurin, John Edward Epler, Michael David Camras, Aurelien Jean Francois David
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Publication number: 20150115299Abstract: A device includes a substrate (10) and a III-nitride structure (15) grown on the substrate, the III-nitride structure comprising a light emitting layer (16) disposed between an n-type region (14) and a p-type region (18). The substrate is a RAO3 (MO)n where R is one of a trivalent cation: Sc, In, Y and a lanthanide; A is one of a trivalent cation: Fe (III), Ga and Al; M is one for a divalent cation: Mg, Mn, Fe (II), Co, Cu, Zn and Cd; and n is an integer ?1. The substrate has an inplane lattice constant asubstrate. At lease one III-nitride layer in the III-nitride structure has a bulk lattice constant alayer such that [(|asubstrate?alayer|)/asubstrate]*100% is no more than 1%.Type: ApplicationFiled: October 27, 2011Publication date: April 30, 2015Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Michael Jason Grundmann, Nathan Frederick Gardner, Werner Karl Goetz, Melvin Barker Mclaurin, John Edward Epler, Francisco Alexander Leon
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Patent number: 9020003Abstract: Blue laser diode (LD) structures are grown on a particular subset of semi-polar GaN substrate orientations that offer a distinct set of advantages relative to both (0001), non-polar oriented devices, and alternative semipolar-polar oriented devices operating in the blue regime are disclosed. In particular, the (30-3-1) and (30-31) gallium and nitrogen containing surface orientation and equivalent planes show narrower luminescence spectra than equivalent devices grown on the nonpolar {10-10} m-plane or semipolar planes tilted away from m-plane toward the c-plane between angles of about 0 degrees to about 7 or 8 degrees such as {60-6-1).Type: GrantFiled: March 13, 2013Date of Patent: April 28, 2015Assignee: Soraa Laser Diode, Inc.Inventors: Melvin Barker McLaurin, James W. Raring
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Publication number: 20140048817Abstract: In embodiments of the invention, a semiconductor structure comprising a III-nitride light emitting layer disposed between an n-type region and a p-type region is grown on a substrate. The substrate is a non-III-nitride material. The substrate has an in-plane lattice constant asubstrate. At least one III-nitride layer in the semiconductor structure has a bulk lattice constant alayer and [(|asubstrate?alayer|)/asubstrate]100% is no more than 1%. A surface of the substrate opposite the surface on which the semiconductor structure is grown is textured.Type: ApplicationFiled: November 1, 2011Publication date: February 20, 2014Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Nathan Frederick Gardner, Werner Karl Goetz, Michail Jason Grundmann, Melvin Barker Mclaurin, John Edward Elper, Michael David Camras, Aurelien Jean Francois Davie
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Publication number: 20130244364Abstract: In a method according to embodiments of the invention, a III-nitride layer is grown on a growth substrate. The III-nitride layer is connected to a host substrate. The growth substrate is removed. The growth substrate is a non-III-nitride material. The growth substrate has an in-plane lattice constant a substrate. The III-nitride layer has a bulk lattice constant a layer. In some embodiments, [(|a substrate?a layer|)/asubstrate]*100% is no more than 1%.Type: ApplicationFiled: October 26, 2011Publication date: September 19, 2013Applicant: KONINKLIJKE PHILIPS ELECTRONICS N.V.Inventors: Nathan Frederick Gardner, Melvin Barker McLaurin, Michael Jason Grundmann, Werner Goetz, John Edward Epler, Qi Ye