Abstract: A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.

Abstract: A variable thickness sputtering target which increases the target material thickness at strategic locations to greatly improve the yield of usable wafers per target, and a method of manufacturing such target comprising forming a generally flat and circularly shaped target blank so that a thickness dimension between the top and bottom surfaces decreases as a function of radius of the target blank. The variable thickness target blank is then formed into a variable thickness dome shaped target member having a bottom portion and a sidewall portion, wherein a wall thickness of said variable thickness dome-shaped target member is thickest proximate a center portion of said bottom portion. In one embodiment of the invention, the variable thickness target blank is formed by clock rolling (or compression rolling) the target blank with crowned rolls to obtain a variable thickness target blank.

Abstract: A non-planar sputter target having differing crystallographic orientations in portions of the sputter target surface that promote more desirable deposition and density patterns of material sputtered from the target surface onto a substrate. A closed dome end of the sputter target is comprised of a first crystallographic orientation and sidewalls of the sputter target are comprised of a crystallographic orientation different from that of the dome. The sputter target is formed, preferably by hydroforming or other metal working techniques, in the absence of annealing. The hydroforming manipulations result in the different crystallographic orientations while minimizing, or ideally omitting, the application of heat. Quick and cost effective non-planar sputter targets that are easily repeatably producable are achievable as a result.

Abstract: Method of forming a two-piece hollow cathode sputter target assembly and the assembly formed thereby. The sputter target assembly includes an outer shell having a substantially cylindrical side wall and is composed of a relatively low purity metallic material. A sputtering insert includes a substantially cylindrical side wall and is concentrically received within, and bonded to, the outer shell. The sputtering insert is composed of a relatively high purity metallic material as used for depositing a thin layer or film onto a desired substrate.

Abstract: Method of forming a two-piece hollow cathode sputter target assembly and the assembly formed thereby. The sputter target assembly includes an outer shell having a substantially cylindrical side wall and is composed of a relatively low purity metallic material. A sputtering insert includes a substantially cylindrical side wall and is concentrically received within, and bonded to, the outer shell. The sputtering insert is composed of a relatively high purity metallic material as used for depositing a thin layer or film onto a desired substrate.