Abstract: Disclosed are a compound impact-resistant device and an application thereof. The compound impact-resistant device includes an inner cylinder, a first pressure sensor and an outer cylinder; an inner cavity of the inner cylinder is connected to a magnetorheological damper, a spiral valve element, a floating piston and a spring from bottom to top; and the outer cylinder is connected to a piston rod, a bottom end of the piston rod penetrates a top of the inner cylinder, the spring and the floating piston to be connected to the spiral valve element, and a portion below the spiral valve element is filled with hydraulic oil. The compound impact-resistant device can provide specific initial support force and achieve active self-adaptation to dynamic impact, thus solving the problems that traditional hydraulic buffers cannot provide initial support force and traditional mechanical crushing members have difficulty in providing large support force.

Abstract: The present invention provides a method for manufacturing a hot-dip galvanized steel sheet, comprising performing a heat treatment step, a hot dip plating step, and an alloying treatment step on a steel sheet having high Si and Mn content. The heat treatment step comprises a first heating phase and a soaking phase; a first heating atmosphere of the first heating stage contains 0.01-0.5% of O2 by volume, and the balance is N2 and inevitable impurities; a soaking atmosphere of the soaking stage contains 0.5% or more of H2 by volume, and the balance is N2 and inevitable impurities; dew points of the first heating atmosphere and the soaking atmosphere are controlled to be greater than or equal to ?20° C. The present invention further provides a hot-dip galvanized steel sheet and a vehicle component.

Abstract: Disclosed is an ultra-high-strength steel having excellent plasticity, comprising in mass percent the chemical elements: C: 0.26-0.30 wt %; Si: 0.8-1.00 wt %; Mn: 2.80-3.30 wt %; Al: 0.04-0.08 wt %; with the balance being Fe and other inevitable impurities. Also disclosed is a manufacturing method for manufacturing the ultra-high-strength steel having excellent plasticity, comprising the following steps: (1) smelting and thin slab continuous casting; (2) heating; (3) hot rolling, wherein an oxide scale on the surface of a hot-rolled steel strip has a thickness of ?6 ?m, and (FeO+Fe3O4)?40 wt % in the oxide scale on the surface of the hot-rolled strip steel; (4) acid pickling or acid pickling and cold rolling; and (5) continuous annealing: annealing at 800-920° C. and performing slow cooling at 3-10° C./s to 690-760° C.; performing fast cooling to 250-350° C. at 50-100° C.; and then heating to 360-460° C., maintaining the temperature for 100-400s and cooling to room temperature.

Abstract: The present disclosure provides a portable terahertz security inspection apparatus, including: a carrying body; a terahertz emitting device arranged on the carrying body, wherein the terahertz emitting device includes a terahertz signal source and an emitting unit connected to the terahertz signal source and configured to emit a terahertz wave; a terahertz detector arranged on the carrying body and configured to receive the terahertz wave reflected from an inspected object; a data acquisition and processing system arranged on the carrying body and connected to the terahertz detector, wherein the data acquisition and processing system is configured to receive a scan data for the inspected object from the terahertz detector and generate a terahertz image; and a display device connected to the data acquisition and processing system and configured to receive and display the terahertz image from the data acquisition and processing system.

Abstract: Disclosed is a wearable article continuous in a longitudinal direction and a transverse direction comprising a body-facing surface and a garment-facing surface; wherein at least a portion of the garment-facing surface is a nonwoven substrate material made of fibers having a Roughness (standard deviation of the grayscale image) of at least about 16, preferably at least about 18, more preferably at least about 20; and a fiber diameter of no more than about 22 ?m, preferably no more than about 17 ?m, more preferably no more than about 15 ?m, according to the measurements herein.

Abstract: A transceiver circuit includes a counter device, a compensation circuit and an adjusting circuit. The counter device is configured to count an execution time of a reception operation and accordingly generate a counting result. The compensation circuit is coupled to the counter device and configured to receive the counting result, determine a plurality of compensation values according to the counting result and sequentially output the compensation values in a transmission operation. The transmission operation follows the reception operation. The adjusting circuit is coupled to the compensation circuit, and configured to receive the compensation values and sequentially adjust amplitude of a signal according to the compensation values in the transmission operation. The compensation values are respectively applied to different portions of the signal.

Abstract: Disclosed is an absorbent article comprising a topsheet, a backsheet, an absorbent core disposed between the topsheet and the backsheet, and an outer cover layer for covering the garment-facing side of the backsheet. The absorbent article has a Thickness Under Compression of from about 2.7 mm to about 4.0 mm. The outer cover layer is formed by a muti-fiber layer nonwoven having a basis weight from about 16gsm to about 35gsm and comprising a garment facing layer and a wearer facing layer. The garment facing layer comprises fibers having a diameter of about 11 µm or less, or from about 7 µm to about 11 µm, and the wearer facing layer comprises fibers having a diameter of about 13 µm or more, or from about 13 µm to about 24 µm. A weight ratio of the garment facing layer is from about 20% to about 70% of the multi-fiber layer nonwoven.

Abstract: The present application provides a semiconductor substrate and a preparation process thereof. In the present application, the polysilicon layer includes the first polysilicon layer and the second polysilicon layer formed separately to generate the less stress, the more random grain orientation and the smaller grain size, maintain the high grain boundary density, and enhance the charge capture. By the combination of different deposition temperature and the combination of two cooling steps after each isothermal annealing treatment, the rate of contraction between the first polysilicon layer and the second polysilicon layer and the initial semiconductor substrate is decreased, and the thermal mismatch of semiconductor substrate is reduced. The stretch between the polysilicon layer and the initial semiconductor substrate can be reduced to prevent the warpage of the semiconductor substrate. Thereby, the stress generated during the growth process of the polysilicon layer can be further reduced.

Abstract: The present disclosure provides an array substrate and a display panel including the same. The array substrate includes a plurality of pixel units. Each of the pixel units includes a main pixel electrode, a sub-pixel electrode, a first thin film transistor (TFT) electrically connected to the sub-pixel electrode, a second TFT electrically connected to the first TFT, and a third TFT electrically connected to the main pixel electrode. The first TFT includes a first channel and a first semiconductor layer. The first channel includes two or more subchannels. The first semiconductor layer includes two or more semiconductor sublayers. Each of the semiconductor sublayers is disposed in a corresponding subchannel.

Abstract: The present disclosure relates to the field of network live streaming, and provides a live streaming interface interaction method and apparatus, an electronic device, and a computer-readable medium. The method comprises: displaying, on a live streaming interface, a first function control and a second function control used for indicating the same function state; receiving an interactive operation acting on the live streaming interface, and switching the function state of the first function control and the second function control when it is determined that the interactive operation meets a preset condition; and respectively displaying corresponding guide animations on display positions corresponding to the first function control and the second function control, so as to prompt a user to perform the next interactive operation.

Abstract: A Battery Management System (BMS) inspects a battery pack using AC impedance. A controller on the BMS drives a Pulse-Width Modulation (PWM) output signal to an on-board excitation regulator such as a synchronous buck converter that modulates a limited energy unit such as a capacitor with a swept frequency of a PWM input signal. The capacitor modulations are applied to a terminal of the battery pack as an AC excitation signal. Synchronous sampling of the battery pack provides responses to the AC excitation signal. An AC excitation signal current and a battery response voltage are processed and Fourier-transformed to generate a Nyquist plot of the excitation-response data. Curve shifts can indicate worn battery cells. The capacitor generating the AC excitation signal draws little energy from the battery pack so AC impedance inspection can occur during all modes: charging, discharging, and idle modes without an external power supply.

Abstract: A SOI wafer and a method of final processing the same is disclosed. Rapid thermal annealing comprises a first heating process in an atmosphere of a mixture of argon gas and hydrogen gas, volume of the hydrogen gas being less than 10% of whole volume of the mixture, and a first annealing process in an atmosphere of argon gas and optionally hydrogen gas, volume of the hydrogen gas being no greater than 10% of whole volume of the mixture. Long-time thermal annealing comprises a second heating process in an atmosphere of a mixture of argon gas and hydrogen gas, volume of the hydrogen gas being less than 10% of whole volume of the mixture, and a second annealing process in an atmosphere of argon gas and optionally hydrogen gas, volume of the hydrogen gas being no greater than 10% of whole volume of the mixture.

Abstract: The present application provides a method of surface treatment of a SOI wafer comprising: providing a SOI wafer comprising a substrate, atop silicon layer and an insulating buried layer, wherein the insulating buried layer is located between the back substrate and the top silicon layer, and the top silicon layer has a surface roughness of larger than 10 ?; removing a native oxide layer from a surface of the top silicon layer by conducting a first isothermal annealing process at a first target temperature, wherein the first isothermal annealing process is under atmosphere of a mixture of argon and hydrogen; and planarizing the surface of the top silicon layer by conducting a second isothermal annealing process at a second target temperature, wherein the second target temperature is higher than the first target temperature, and the second isothermal annealing process is under atmosphere of argon.

Abstract: The present disclosure relates to a method for improving the surface roughness of a SOI wafer. By controlling the gas composition at each stage of the rapid thermal treatment process and corresponding heating and annealing processes, the final wafer is enabled to have a surface roughness of less than 5? and has good application prospects.

Abstract: The present application provides a process of surface treatment of a silicon-on-insulator (SOI) wafer comprising: providing a SOI wafer comprising a back substrate, a top silicon layer and an insulating buried layer, wherein the insulating buried layer is located between the back substrate and the top silicon layer, and the top silicon layer has a surface roughness of larger than 10 ?; conducting a first planarization to a surface of the top silicon layer by conducting a batch annealing process at a first target temperature, and conducting a second planarization to a surface of the top silicon layer by conducting a rapid thermal annealing process at a second target temperature. The present application combines the batch annealing process and the rapid thermal annealing process to optimize the SOI wafer, especially the surface roughness of the SOI wafer. The SOI wafer planarized by the two thermal annealing processes has a good surface roughness of the top silicon layer which satisfies process requirements.

Abstract: The present disclosure relates to a method for treating a wafer surface. By controlling the gas composition at each stage of the treatment process, and corresponding processes of heating and annealing, and cooling and thinning by oxidation, the final wafer is enabled to have a surface roughness of less than 5 ?. This effectively reduces the cost of the final treatment process and has good application prospects.

Abstract: The present invention discloses a transmission circuit having output power compensation mechanism. A base-band circuit receives and processes a digital input signal to perform conversion and amplification according to at least one gain parameter to generate an analog output signal. A frequency up-converting circuit performs frequency up-conversion on the analog output signal to generate an RF signal. A RF amplification circuit amplifies the RF signal to generate an output RF signal to an antenna. A temperature monitoring circuit monitors temperature of the RF amplification circuit to generate an instant temperature value thereof. A calibration circuit increases at least a part of the gain parameter when the instant temperature value makes a power of the RF amplification circuit decrease and decreases at least a part of the gain parameter when the instant temperature value makes the power increase.

Abstract: A SOI structured semiconductor silicon wafer and a method of making the same is disclosed, comprising: loading a semiconductor silicon wafer in a first batch vertical furnace, and conducting a long-time thermal treatment; conducting a sacrificial oxidation process in a second batch vertical furnace after the long-time thermal treatment; conducting a rapid thermal annealing treatment after the second step ; wherein during the long-time thermal treatment, the semiconductor silicon wafer is kept in a protection atmosphere of pure , heated-up until meet a target temperature after changing the atmosphere of pure argon into a mixture gas of 1-n % Ar and n % H2, and then annealed in the atmosphere of a mixture of 1-n % Ar and n % hydrogen gas or pure Ar, and n is a value no greater than 10.

Abstract: A method for manufacturing modified metal nanoparticles includes steps as follows. Metal nanoparticles are provided, wherein each of the metal nanoparticles is a gold nanoparticle or a silver nanoparticle. An ascorbic acid solution is provided, wherein the ascorbic acid solution includes ascorbic acid molecules and/or ascorbic acid ions. A surface modification step is conducted, wherein the metal nanoparticles and the ascorbic acid solution are mixed, such that surfaces of the metal nanoparticles are modified by the ascorbic acid molecules and/or ascorbic acid ions to obtain the modified metal nanoparticles.

Abstract: A method and system identify assistance offerings that are likely to be relevant to users of a data management system. The method and system utilize a multivariate random forest regression machine learning process to train an assistance offerings recommendation model to recommend relevant assistance offerings to users of the data management system. The multivariate random forest regression machine learning process replaces zero values in the training set data with negative numbers to increase the accuracy of the machine learning process.