Abstract: Embodiments of the present disclosure relates to a semiconductor device structure. The structure includes a source/drain epitaxial feature disposed over a substrate, a first interlayer dielectric (ILD) disposed over the source/drain epitaxial feature, a second ILD disposed over the first ILD. The second ILD includes a first dopant species having an atomic radius equal to or greater than silicon and a second dopant species having an atomic mass less than 15. The structure also includes a first conductive feature disposed in the second ILD, and a second conductive feature disposed over the source/drain epitaxial feature, the second conductive feature extending through the first ILD and in contact with the first conductive feature.

Abstract: A device includes a fin extending from a semiconductor substrate; a gate stack over the fin; a first spacer on a sidewall of the gate stack; a source/drain region in the fin adjacent the first spacer; an inter-layer dielectric layer (ILD) extending over the gate stack, the first spacer, and the source/drain region, the ILD having a first portion and a second portion, wherein the second portion of the ILD is closer to the gate stack than the first portion of the ILD; a contact plug extending through the ILD and contacting the source/drain region; a second spacer on a sidewall of the contact plug; and an air gap between the first spacer and the second spacer, wherein the first portion of the ILD extends across the air gap and physically contacts the second spacer, wherein the first portion of the ILD seals the air gap.

Abstract: A semiconductor device and a method of forming the same are provided. The semiconductor device includes a substrate, a gate structure, a dielectric structure and a contact structure. The substrate has source/drain (S/D) regions. The gate structure is on the substrate and between the S/D regions. The dielectric structure covers the gate structure. The contact structure penetrates through the dielectric structure to connect to the S/D region. A lower portion of a sidewall of the contact structure is spaced apart from the dielectric structure by an air gap therebetween, while an upper portion of the sidewall of the contact structure is in contact with the dielectric structure.

Abstract: A fixing structure used to connect a display panel to a housing of an electronic device during manufacture of the electronic device includes a fixing member, an auxiliary member spaced apart from the fixing member, and supporting posts disposed between the fixing member and the auxiliary member. The fixing member is to be bonded to the display panel. A projection of an outer edge of the auxiliary member on a plane of the fixing member is outside of an outer edge of the fixing member. The supporting posts and the auxiliary member are removed after the display panel is bonded to the fixing member. A method for assembling the display panel with the fixing structure is also disclosed.

Abstract: A vacuum processing device has at least one vacuum processing unit, which includes a housing defining a vacuum chamber, and a gate valve assembly. The valve assembly includes a lid plate. for covering an opening in the housing, and a connecting member connected fixedly to a rotating shaft. Each of several aligned adjustment rods connects the plate to the connecting member, and is disposed perpendicular to the plate. A plurality of resilientunits biases the plate away from the connecting member to press against a wall of the housing, which defines the opening. A plurality of adjusting units are movable respectively on the rods to vary the distance between a portion of the plate and a portion of the connecting member, which are interconnected by the respective one of the rods, so that the plate can be pressed entirely against the wall of the housing.