Patents by Inventor Meng-Kuei Hsieh

Meng-Kuei Hsieh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Phase-change material, memory unit and method for electrically storing/reading data
    Patent number: 7884345
    Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.
    Type: Grant
    Filed: July 30, 2008
    Date of Patent: February 8, 2011
    Assignee: National Taiwan University
    Inventors: Lung-Han Peng, Sung-Li Wang, Meng-Kuei Hsieh, Chien-Yu Chen
  • PHASE-CHANGE MATERIAL, MEMORY UNIT AND METHOD FOR ELECTRICALLY STORING/READING DATA
    Publication number: 20090185412
    Abstract: A phase-change material and a memory unit using the phase-change material are provided. The phase-change material is in a single crystalline state and includes a compound of a metal oxide or nitroxide, wherein the metal is at least one selected from a group consisting of indium, gallium and germanium. The memory unit includes a substrate; at least a first contact electrode formed on the substrate; a dielectric layer disposed on the substrate and formed with an opening for a layer of the phase-change material to be formed therein; and at least a second contact electrode disposed on the dielectric layer. As the phase-change material is in a single crystalline state and of a great discrepancy between high and low resistance states, the memory unit using the phase-changed material can achieve a phase-change characteristic rapidly by pulse voltage and avert any incomplete reset while with a low critical power.
    Type: Application
    Filed: July 30, 2008
    Publication date: July 23, 2009
    Applicant: NATIONAL TAIWAN UNIVERSITY
    Inventors: Lung-Han Peng, Sung-Li Wang, Meng-Kuei Hsieh, Chien-Yu Chen