Abstract: The present disclosure provides a routing structure. The routing structure includes a substrate having a boundary and a first conductive trace configured to be coupled to a first conductive pad disposed within the boundary of the substrate. The first conductive trace is inclined with respect to the boundary of the substrate.

Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.

Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.

Abstract: Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. A layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. Two first vias are formed over and in contact with the metal segment in the layout. EM rule is kept on the metal segment when a distance between the two first vias is greater than a threshold distance. The EM rule is relaxed on the metal segment when the distance between the two first vias is less than or equal to the threshold distance.

Abstract: Various layouts for conductive interconnects in the conductor layers in an integrated circuit are disclosed. Some or all of the conductive interconnects are included in a power delivery system. In general, the conductive interconnects in a first conductor layer are arranged according to an orthogonal layout and the conductive interconnects in a second conductor layer are arranged according to a non-orthogonal layout. Conductive stripes in a transition conductor layer positioned between the first and the second conductor layers electrically connect the conductive interconnects in the first conductor layer to the conductive interconnects in the second conductor layer.

Abstract: The present disclosure provides a routing structure. The routing structure includes a substrate having a boundary and a first conductive trace configured to be coupled to a first conductive pad disposed within the boundary of the substrate. The first conductive trace is inclined with respect to the boundary of the substrate.

Abstract: Various layouts for conductive interconnects in the conductor layers in an integrated circuit are disclosed. Some or all of the conductive interconnects are included in a power delivery system. In general, the conductive interconnects in a first conductor layer are arranged according to an orthogonal layout and the conductive interconnects in a second conductor layer are arranged according to a non-orthogonal layout. Conductive stripes in a transition conductor layer positioned between the first and the second conductor layers electrically connect the conductive interconnects in the first conductor layer to the conductive interconnects in the second conductor layer.

Abstract: Various layouts for conductive interconnects in the conductor layers in an integrated circuit are disclosed. Some or all of the conductive interconnects are included in a power delivery system. In general, the conductive interconnects in a first conductor layer are arranged according to an orthogonal layout and the conductive interconnects in a second conductor layer are arranged according to a non-orthogonal layout. Conductive stripes in a transition conductor layer positioned between the first and the second conductor layers electrically connect the conductive interconnects in the first conductor layer to the conductive interconnects in the second conductor layer.

Abstract: The present disclosure provides a routing structure. The routing structure includes a substrate having a first circuit region and a boundary surrounding the first circuit region. The routing structure also includes a first conductive trace coupled to a first conductive pad disposed in the first circuit region. The first conductive trace is inclined with respect to the boundary of the substrate. A method of forming a routing structure is also disclosed.

Abstract: Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. A layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. Two first vias are formed over and in contact with the metal segment in the layout. EM rule is kept on the metal segment when a distance between the two first vias is greater than a threshold distance. The EM rule is relaxed on the metal segment when the distance between the two first vias is less than or equal to the threshold distance.

Abstract: Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. EM rule is kept on the metal segment when a single via is formed over and in contact with the metal segment in the layout. The EM rule is relaxed on the metal segment when two first vias are formed over and in contact with the metal segment in the layout. The two first vias have the same current direction.

Abstract: The present disclosure provides a routing structure. The routing structure includes a substrate having a first circuit region and a boundary surrounding the first circuit region. The routing structure also includes a first conductive trace coupled to a first conductive pad disposed in the first circuit region. The first conductive trace is inclined with respect to the boundary of the substrate. A method of forming a routing structure is also disclosed.

Abstract: An integrated circuit layout is provided. The integrated circuit layout includes one or more first cell rows partially extending across a space arranged for an integrated circuit layout along a first direction. Each of the one or more first cell rows has a first height along a second direction perpendicular to the first direction. The integrated circuit layout includes one or more third cell rows partially extending across the space along the first direction. Each of the one or more third cell rows has a second height along the second direction, the second height different from the first height.

Abstract: Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to a current simulation result of the IC. EM rule is kept on the metal segment when a single via is formed over and in contact with the metal segment in the layout. The EM rule is relaxed on the metal segment when two first vias are formed over and in contact with the metal segment in the layout. The two first vias have the same current direction.

Abstract: A method for forming an integrated device includes following operations. It is provided a first circuit having a first connecting path in a metal line layer, a second connecting path, and a third connecting path. The second connecting path is electrically connected to a first connecting portion of the first connecting path in the metal line layer. The third connecting path is electrically coupled to a second connecting portion of the first connecting path in the metal line layer. An electromigration (EM) data of the first connecting path is analyzed to determine if a third connecting portion in the metal line layer between the first connecting portion and the second connecting portion induces EM phenomenon. The first circuit is modified to generate a second circuit when the third connecting portion induces EM phenomenon. The integrated device is generated according to the second circuit.

Abstract: Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to the current simulation result of the IC. It is determined whether to relax the EM rule on the metal segment according to the number of vias over the metal segment in the layout. The vias are in contact with the metal segment.

Abstract: Methods for analyzing electromigration (EM) in an integrated circuit (IC) are provided. The layout of the IC is obtained. A metal segment is selected from the layout according to the current simulation result of the IC. It is determined whether to relax the EM rule on the metal segment according to the number of vias over the metal segment in the layout. The vias are in contact with the metal segment.

Abstract: A method for forming an integrated device includes following operations. It is provided a first circuit having a first connecting path in a metal line layer, a second connecting path, and a third connecting path. The second connecting path is electrically connected to a first connecting portion of the first connecting path in the metal line layer. The third connecting path is electrically coupled to a second connecting portion of the first connecting path in the metal line layer. An electromigration (EM) data of the first connecting path is analyzed to determine if a third connecting portion in the metal line layer between the first connecting portion and the second connecting portion induces EM phenomenon. The first circuit is modified to generate a second circuit when the third connecting portion induces EM phenomenon. The integrated device is generated according to the second circuit.

Abstract: A system for simulating reliability of a circuit design includes: a first memory device, arranged to store a technology file, wherein the circuit design comprises a plurality of circuit cells, and the first memory device further stores a plurality of first failure rates corresponding to a first circuit cell in the plurality of circuit cells; a first simulating device, coupled to the first memory device, for generating a first specific failure rate of the first circuit cell according to the plurality of first failure rates and the technology file; and an operating device, coupled to the first simulating device, for generating a total failure rate of the circuit design according to the first specific failure rate.

Abstract: A method for forming an integrated device includes following operations. A first circuit is provided. The first circuit has a first connecting path, a plurality of second connecting paths, and a third connecting path. The plurality of second connecting paths are electrically connected to a first connecting portion of the first connecting path. The third connecting path is electrically coupled to a second connecting portion of the first connecting path. An electromigration (EM) data of the first connecting path is analyzed to determine if a third connecting portion between the first connecting portion and the second connecting portion induces EM phenomenon. The first circuit is modified for generating a second circuit when the third connecting portion induces EM phenomenon. The integrated device according to the second circuit is generated.