Abstract: The present disclosure provides a polyimide resin having at least two glass transition temperatures measured by dynamic mechanical analysis (DMA). Also, a metal-clad laminate including the polyimide resin.

Abstract: The present disclosure provides a metal clad laminate, a preparation method thereof, and a method for preparing a flexible circuit board by using the same. The metal clad laminate of the present disclosure includes a first metal foil, a first polyimide layer directly disposed on the first metal foil, a second metal foil, and a second polyimide layer directly disposed on the second metal foil, the first polyimide layer being in contact with the second polyimide layer. The metal clad laminate of the present disclosure is equivalent to a double-sided flexible copper clad laminate (FCCL) in structure, is superior to a single-sided FCCL in terms of mechanical performance in reducing warpage, and has the advantage of being useful for circuit fabrication simultaneously on both sides thereof.

Abstract: The present disclosure relates to a polyimide precursor composition including an amic acid ester oligomer of formula (I): wherein r, Rx, G, P and R are as defined in the specification. The polyimide made from the polyimide precursor composition of the present disclosure provides adhesion upon hot pressing such that a quasi double-sided two-layer metal clad laminate with an appropriate peeling strength or a double-sided two-layer metal clad laminate with a high peeling strength can be provided.

Abstract: The present invention provides a polyimide precursor composition comprising a polyimide precursor and a thermal base generator having the structure of formula (1): wherein R1, R2, R3, R4, R5 and Y? are as defined in the specification. The present invention also provides a polyimide prepared from the aforementioned precursor composition, and a preparation method thereof.

Abstract: The present disclosure relates to a solvent-containing dry film and a method for applying a dry film on a substrate. The dry film includes a carrier and a resin layer. The resin layer contains a resin composition and a solvent and the solvent is present in a total amount of at least 5 wt % based on the total weight of the resin layer. The dry film of the present invention can be applied onto a substrate without the use of a prior art vacuum lamination apparatus. The application process is simple and is more cost-efficient than the prior art techniques.

Abstract: The present invention relates to an isocyanate-modified photosensitive polyimide. The photosensitive polyimide of the invention possesses excellent heat resistance, chemistry resistance, and flexibility, and can be used as a liquid photo resist or dry film resist, or used in a solder resist, coverlay film, or printed wiring board.

Abstract: A polyimide (PI) having two —COOH capping groups at each end is provided. A coating composition is further provided, which contains the PI and a hardening agent having 2 to 6 functional groups capable of reacting with —COOH. A PI coating layer and PI film formed by the coating composition of the present invention possess excellent chemical resistance and coefficient of thermal expansion (CTE), which makes them applicable in fabrication of protective materials for active/passive devices, optical materials, touch panels, copper foil substrates, soft flexible electronic materials or integrated circuit elements, or film substrate for glass film touch panels.

Abstract: The invention pertains to an isocyanate-modified photosensitive polyimide. The photosensitive polyimide of the invention possesses excellent heat resistance, chemical resistance and flexibility, and can be used in a liquid photo resist composition or dry film photo resist composition, or used in a solder resist, coverlay film, or printed wiring board.

Abstract: The invention pertains to an isocyanate-modified photosensitive polyimide. The photosensitive polyimide of the invention possesses excellent heat resistance, chemical resistance and flexibility, and can be used in a liquid photo resist composition or dry film photo resist composition, or used in a solder resist, coverlay film, or printed wiring board.

Abstract: The invention pertains to an epoxy-modified photosensitive polyimide, which possesses excellent heat resistance, chemistry resistance, and flexibility, and can be used in a liquid photo resist or dry film resist, or used in a solder resist, coverlay film, or printed circuit board.

Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)4-x to allow the silica moiety to carry a photo-polymerizable unsaturated group; adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9 and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: A photosensitive resin composition comprising: a photosensitive polyimide of formula (I); an acrylate monomer; and a photoinitiator, wherein A, B, D, J, m, and n are as defined in the specification.

Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: A process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, including adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4?x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. Also, a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: The invention pertains to an isocyanate-modified photosensitive polyimide. The photosensitive polyimide of the invention possesses excellent heat resistance, chemical resistance and flexibility, and can be used in a liquid photo resist composition or dry film photo resist composition, or used in a solder resist, coverlay film, or printed wiring board.

Abstract: The invention pertains to an epoxy-modified photosensitive polyimide, which possesses excellent heat resistance, chemistry resistance, and flexibility, and can be used in a liquid photo resist or dry film resist, or used in a solder resist, coverlay film, or printed circuit board.

Abstract: The present invention relates to an isocyanate-modified photosensitive polyimide. The photosensitive polyimide of the invention possesses excellent heat resistance, chemistry resistance, and flexibility, and can be used as a liquid photo resist or dry film resist, or used in a solder resist, coverlay film, or printed wiring board.

Abstract: The present invention relates to a process for preparing a precursor solution for polyimide/silica composite material and a process for forming a polyimide/silica composite material film on a substrate, comprising adding a monomer of a silane compound to allow a poly(amic acid) to carry a silica moiety; adding a monomer of formula (R6)xSi(R7)(4-x) to allow the silica moiety to carry a photo-polymerizable unsaturated group; and adding a monomer of formula R8N(R9)2 to allow the poly(amic acid) to carry a photo-polymerizable unsaturated group, where R6, R7, R8, R9, and x are as defined in the specification. The present invention also relates to a precursor solution for polyimide/silica composite material and a polyimide/silica composite material. The composite material of the present invention is useful in microelectronic devices, semiconductor elements, and photoelectric elements.

Abstract: The present invention relates to an organic electroluminescent device, comprising a first electrode, an organic luminescent layer and a second electrode which disposed over a substrate. The organic electroluminescent layer comprises compound of formula (I) compound, wherein that Ar1—Ar6 are individual hydrogen, substituted or unsubstituted C1-6 alkyl, substituted or unsubstituted C3-6 cycloalkyl, substituted or unsubstituted C3-10 alkenyl, substituted or unsubstituted C6-40 aromatic amino, substituted or unsubstituted C6-40 aromatic, substituted or unsubstituted C6-40 poly cyclic aromatic, or substituted or unsubstituted C6-40 aralkyl.