Abstract: A degassing chamber and a semiconductor processing apparatus are provided. The degassing chamber includes a chamber; a substrate container, movable within the chamber in a vertical direction; and a heating component, disposed within the chamber. A substrate transferring opening is formed through a sidewall of the chamber for transferring substrates into or out of the chamber. The heating component includes a first light source component and a second light source component. The chamber is divided into a first chamber and a second chamber by the substrate transferring opening. The first light source component is located in the first chamber, and the second light source component is located in the second chamber. The first light source component and the second light source component are provided for heating a substrate in the substrate container.

Abstract: A magnetron drive mechanism is provided. The magnetron drive mechanism includes: a driving assembly, a rotating assembly, a transmission assembly, and a limiting assembly. The driving assembly is configured to drive the rotating assembly and the transmission assembly to rotate clockwise or counterclockwise around a first rotation axis. The rotating assembly is connected to a magnetron, and through the transmission assembly, the driving assembly drives the rotating assembly and the magnetron to rotate clockwise or counterclockwise around a second rotation axis. The second rotation axis and the first rotation axis are parallel with each other. The limiting assembly is configured to block the rotating assembly from rotating clockwise or counterclockwise, respectively, to confine the magnetron to positions at different radii of the first rotation axis. The present disclosure also provides a magnetron assembly and a reaction chamber.

Abstract: An electrostatic chuck includes a support assembly including a base, a chuck placed at the base and configured to carry a workpiece, and a fastening assembly configured to removably fix the chuck at the base.

Abstract: The present disclosure provides a feeding structure, an upper electrode assembly, and a physical vapor deposition chamber and device. In the present disclosure a RF power is fed through the center of a first introduction member of the feeding structure and is evenly distributed onto a target by a plurality of distribution members.

Abstract: A plasma processing apparatus includes a chamber (20) and a target (25) above the chamber (20). The surface of the target (25) contacts the processing area of the chamber (20). The chamber (20) includes an insulating sub-chamber (21) and a first conductive sub-chamber (22), which are superposed. The first conductive sub-chamber (22) is provided under the insulating sub-chamber (21). The insulating sub-chamber (21) is made of insulating material, and the first conductive sub-chamber (22) is made of metal material. A Faraday shield component (10) which is made of metal material or insulating material electroplated with conductive coatings and includes at least one slit is provided in the insulating sub-chamber (21). An inductance coil (13) surrounds the exterior of the insulating sub-chamber (21). The problem about the wafer contamination due to particles formed on the surface of the coil during the sputtering process can be solved by using the plasma processing apparatus.

Abstract: An electrostatic chuck includes a support assembly including a base, a chuck placed at the base and configured to carry a workpiece, and a fastening assembly configured to removably fix the chuck at the base.

Abstract: A magnetron drive mechanism is provided. The magnetron drive mechanism includes: a driving assembly, a rotating assembly, a transmission assembly, and a limiting assembly. The driving assembly is configured to drive the rotating assembly and the transmission assembly to rotate clockwise or counterclockwise around a first rotation axis. The rotating assembly is connected to a magnetron, and through the transmission assembly, the driving assembly drives the rotating assembly and the magnetron to rotate clockwise or counterclockwise around a second rotation axis. The second rotation axis and the first rotation axis are parallel with each other. The limiting assembly is configured to block the rotating assembly from rotating clockwise or counterclockwise, respectively, to confine the magnetron to positions at different radii of the first rotation axis. The present disclosure also provides a magnetron assembly and a reaction chamber.

Abstract: The present disclosure provides a feeding structure, an upper electrode assembly, and a physical vapor deposition chamber and device. In the present disclosure a RF power is fed through the center of a first introduction member of the feeding structure and is evenly distributed onto a target by a plurality of distribution members.

Abstract: A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21?) disposed at the top of the cavity (20), a base (22) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24) and the dielectric window (21, 21?) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24).

Abstract: The present disclosure provides a carrying device and a semiconductor processing apparatus. The carrying device includes a heating plate and a cooling plate, the heating plate and the cooling plate are spaced apart, and a thermal insulation region is formed between the heating plate and the cooling plate. The carrying device of the present disclosure not only can preempt the need to stop the process due to excessively high temperature, but also can maintain a uniform and stable temperature throughout the process, thereby providing a qualified and stable processing temperature for a workpiece to be processed, and eventually obtaining better processing results.

Abstract: The present disclosure provides a degassing method, a degassing chamber, and a semiconductor processing apparatus. The degassing method includes heating a degassing chamber to provide an internal temperature at a preset temperature, and maintaining the internal temperature of the degassing chamber at the preset temperature; and transferring substrates to be degassed into the degassing chamber and heating the substrates for a preset period of time, and taking the substrates out after the preset period of time of the heating. The disclosed degassing method is able to improve the temperature uniformity not only for a same batch of substrates but also for different batches of substrates. In addition, the disclosed degassing method can also realize anytime instant loading/unloading of the substrates to be degassed, thereby increasing the productivity of the equipment.

Abstract: A degassing chamber and a semiconductor processing apparatus are provided. The degassing chamber includes a chamber; a substrate container, movable within the chamber in a vertical direction; and a heating component, disposed within the chamber. A substrate transferring opening is formed through a sidewall of the chamber for transferring substrates into or out of the chamber. The heating component includes a first light source component and a second light source component. The chamber is divided into a first chamber and a second chamber by the substrate transferring opening. The first light source component is located in the first chamber, and the second light source component is located in the second chamber. The first light source component and the second light source component are provided for heating a substrate in the substrate container.

Abstract: Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

Abstract: The present invention provides a hot plate and substrate processing equipment using the same, wherein the hot plate comprises a central sub hot plate and at least one outer ring sub hot plate located around the central sub hot plate; thermal insulation parts are provided between the central sub hot plate and the outer ring sub hot plate and between two adjacent outer ring sub hot plates, so that the heat conduction between the adjacent sub hot plates can be effectively prevented or reduced by means of the thermal insulation parts. The hot plate and the substrate processing equipment using the same provided in the present invention can effectively compensate for the heat losses in the edge region of the substrate, so as to keep the heating rate the same in each region of the substrate.

Abstract: A heating chamber and a semiconductor processing apparatus are provided. The heating chamber includes: a heating barrel (17) disposed in the heating chamber and located above a substrate transferring window; an annular heating device (15) disposed around an inner side of the heating barrel and configured to radiate heat from a periphery to an interior of the heating barrel; a substrate cassette (14) configured to bear multiple layers of substrates and allow the multiple layers of substrates to be arranged at intervals in an axial direction of the heating barrel; and a substrate cassette lifting device (13) configured to drive the substrate cassette to move up into an internal spare defined by the annular heating device, or move down to a position corresponding to the substrate transferring window.

Abstract: A precleaning chamber (100, 200, 300) and a plasma processing apparatus, comprising a cavity (20) and a dielectric window (21, 21?) disposed at the top of the cavity (20), a base (22 ) and a process assembly (24) surrounding the base (22) are disposed in the precleaning chamber (100, 200, 300), and the base (22), the process assembly (24 ) and the dielectric window (21, 21?) together form a process sub-cavity (211) above the base (22); and a space of the cavity (20) located below the base (22) is used as a loading/unloading sub-cavity (202), the precleaning chamber (100, 200, 300) further comprises a gas is device (32), the gas inlet device (32) comprises a gas inlet (323), and the gas inlet (323) is configured to directly transport a process gas into the process sub-cavity (211) from above the process assembly (24).

Abstract: A heating chamber and a semiconductor processing apparatus are provided. The heating chamber includes: a heating barrel (17) disposed in the heating chamber and located above a substrate transferring window; an annular heating device (15) disposed around an inner side of the heating barrel and configured to radiate heat from a periphery to an interior of the heating barrel; a substrate cassette (14) configured to bear multiple layers of substrates and allow the multiple, layers of substrates to be arranged at intervals in an axial direction of the heating barrel; and a substrate cassette lifting device (13) configured to drive the substrate cassette to move up into an internal spare defined by the annular heating device, or move down to a position corresponding to the substrate transferring window.

Abstract: The present invention provides a cassette positioning device and a semiconductor processing apparatus. The cassette positioning device includes: a positioning baseplate arranged horizontally and connected with the lifting device; a rotatable positioning, plate, which is located on the positioning baseplate, has one end rotatably connected with one end of the positioning baseplate, and is provided thereon with a positioning assembly; and a support column arranged under the rotatable positioning plate. The support column and the positioning baseplate can move relatively in the vertical direction, such that the rotatable positioning plate is pushed up by the support column and rotates to be inclined relatively to the positioning baseplate when the support column rises to a preset highest position relatively to the positioning baseplate, and the rotatable positioning plate and the positioning baseplate are stacked on the support column in parallel when the support column is located at a preset lowest position.

Abstract: Embodiments of the invention provide a process chamber and a semiconductor processing apparatus. According to at least one embodiment, the process chamber includes a reaction compartment, a gas introducing system and a wafer transfer device. The reaction compartment is provided in the process chamber and used for performing a process on a wafer, the gas introducing system is used for providing processing gas to the reaction compartment, and the wafer transfer device is used for transferring the wafer into the reaction compartment. A lining ring assembly is provided in the reaction compartment, and is configured such that a flow uniformizing cavity is formed between the lining ring assembly itself and an inner side wall of the reaction compartment, so as to uniformly transport the processing gas, from the gas introducing system, into the reaction compartment through the flow uniformizing cavity.

Abstract: The present disclosure provides a pre-cleaning chamber. The pre-cleaning chamber includes a cavity, a top cover of the cavity, and an ion filtering unit with venting holes. The ion filtering unit is configured to divide the cavity into an upper sub-cavity and a lower sub-cavity and to filter out ions from plasma when the plasma is moving through the filtering unit from the upper sub-cavity to the lower sub-cavity. The pre-cleaning chamber further includes a carry unit located in the lower sub-cavity for supporting a wafer.