Patents by Inventor Mengyan Shen
Mengyan Shen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10741399Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: GrantFiled: February 14, 2018Date of Patent: August 11, 2020Assignee: PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Eric Mazur, Mengyan Shen
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Patent number: 10361083Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: GrantFiled: August 26, 2015Date of Patent: July 23, 2019Assignee: President and Fellows of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Publication number: 20180182630Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: ApplicationFiled: February 14, 2018Publication date: June 28, 2018Inventors: Eric Mazur, Mengyan Shen
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Publication number: 20170282147Abstract: Nanostructured arrays having a metal catalyst (e.g., cobalt) are irradiated with light to initiate the an artificial photosynthetic reaction resulting in the formation of carbon-containing molecules, for example, long chained hydrocarbons or amino acids. A nanostructure having one or more structural elements having a high aspect ratio can formed over a substrate and are placed in contact with water and a carbon-containing source (e.g., carbon dioxide, bicarbonate, methane). When the nanostructure is exposed to light, the water and the carbon-containing source can react to form a molecule having at least two carbon atoms chained together. Structural elements may include a number of metal layers arranged in a patterned configuration so that, upon light irradiation, a greater amount of light energy is concentrated in close proximity to the region where the reaction is catalyzed than for the case without the patterned configuration.Type: ApplicationFiled: June 12, 2017Publication date: October 5, 2017Applicant: University of MassachusettsInventors: Mengyan Shen, Cong Wang
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Publication number: 20170133525Abstract: The invention provides a novel method for fabrication of IR-absorbing silicon substrate in ambient atmosphere without the need for special background gases, and compositions and methods of preparation and use thereof.Type: ApplicationFiled: November 9, 2016Publication date: May 11, 2017Inventors: Mengyan Shen, Qinghua Zhu
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Publication number: 20160005608Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: ApplicationFiled: August 26, 2015Publication date: January 7, 2016Inventors: Eric Mazur, Mengyan Shen
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Patent number: 9136146Abstract: The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: GrantFiled: November 6, 2013Date of Patent: September 15, 2015Assignee: President And Fellows Of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Publication number: 20140060737Abstract: The present invention generally provides semiconductor substrates having submicronsized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: ApplicationFiled: November 6, 2013Publication date: March 6, 2014Applicant: President & Fellows of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Patent number: 8598051Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: GrantFiled: February 4, 2011Date of Patent: December 3, 2013Assignee: President and Fellows of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Publication number: 20120145989Abstract: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.Type: ApplicationFiled: February 15, 2012Publication date: June 14, 2012Applicant: PRESIDENT AND FELLOWS OF HARVARD COLLEGEInventors: Eric Mazur, Mengyan Shen
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Publication number: 20120097521Abstract: Nanostructured arrays having a metal catalyst (e.g., cobalt) are irradiated with light to initiate the an artificial photosynthetic reaction resulting in the formation of carbon-containing molecules, for example, long chained hydrocarbons or amino acids. A nanostructure having one or more structural elements having a high aspect ratio can formed over a substrate and are placed in contact with water and a carbon-containing source (e.g., carbon dioxide, bicarbonate, methane). When the nanostructure is exposed to light, the water and the carbon-containing source can react to form a molecule having at least two carbon atoms chained together. Structural elements may include a number of metal layers arranged in a patterned configuration so that, upon light irradiation, a greater amount of light energy is concentrated in close proximity to the region where the reaction is catalyzed than for the case without the patterned configuration.Type: ApplicationFiled: October 25, 2011Publication date: April 26, 2012Applicant: University of MassachusettsInventors: Mengyan Shen, Cong Wang
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Patent number: 8143686Abstract: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.Type: GrantFiled: October 18, 2010Date of Patent: March 27, 2012Assignee: President and Fellows of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Publication number: 20110121206Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: ApplicationFiled: February 4, 2011Publication date: May 26, 2011Applicant: PRESIDENT & FELLOWS OF HARVARD COLLEGEInventors: Eric Mazur, Mengyan Shen
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Publication number: 20110031471Abstract: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.Type: ApplicationFiled: October 18, 2010Publication date: February 10, 2011Applicant: PRESIDENT & FELLOWS OF HARVARD COLLEGEInventors: Eric Mazur, Mengyan Shen
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Patent number: 7884446Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: GrantFiled: September 22, 2008Date of Patent: February 8, 2011Assignee: President & Fellows of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Patent number: 7816220Abstract: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.Type: GrantFiled: February 27, 2008Date of Patent: October 19, 2010Assignee: President & Fellows of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Publication number: 20090213883Abstract: In one aspect, the present invention provides a method of processing a substrate, e.g., a semiconductor substrate, by irradiating a surface of the substrate (or at least a portion of the surface) with a first set of polarized short laser pulses while exposing the surface to a fluid to generate a plurality of structures on the surface, e.g., within a top layer of the surface. Subsequently, the structured surface can be irradiated with another set of polarized short laser pulses having a different polarization than that of the initial set while exposing the structured surface to a fluid, e.g., the same fluid initially utilized to form the structured surface or a different fluid. In many embodiments, the second set of polarized laser pulses cause the surface structures formed by the first set to break up into smaller-sized structures, e.g., nano-sized features such as nano-sized rods.Type: ApplicationFiled: February 27, 2008Publication date: August 27, 2009Applicant: PRESIDENT & FELLOWS OF HARVARD COLLEGEInventors: Eric Mazur, Mengyan Shen
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Publication number: 20090014842Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: ApplicationFiled: September 22, 2008Publication date: January 15, 2009Applicant: PRESIDENT & FELLOWS OF HARVARD COLLEGEInventors: Eric Mazur, Mengyan Shen
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Patent number: 7442629Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: GrantFiled: August 4, 2005Date of Patent: October 28, 2008Assignee: President & Fellows of Harvard CollegeInventors: Eric Mazur, Mengyan Shen
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Publication number: 20060079062Abstract: The present invention generally provides semiconductor substrates having submicron-sized surface features generated by irradiating the surface with ultra short laser pulses. In one aspect, a method of processing a semiconductor substrate is disclosed that includes placing at least a portion of a surface of the substrate in contact with a fluid, and exposing that surface portion to one or more femtosecond pulses so as to modify the topography of that portion. The modification can include, e.g., generating a plurality of submicron-sized spikes in an upper layer of the surface.Type: ApplicationFiled: August 4, 2005Publication date: April 13, 2006Applicant: PRESIDENT & FELLOWS OF HARVARD COLLEGEInventors: Eric Mazur, Mengyan Shen