Abstract: A semiconductor structure includes a first semiconductor structure and a second semiconductor structure. The method of bonding a semiconductor structure includes performing a surface treatment on a first surface of the first semiconductor structure and a second surface of the second semiconductor structure based on a first gas and a second gas. The first gas excites at least one of the first surface or the second surface to generate a free radical. The second gas is excited to generate a plasma gas. A free negative ion in the plasma gas is combined with the free radical. The method also includes performing a face-to-face bonding on the first surface and the second surface.

Abstract: A method and apparatus for wafer bonding. The method includes that, a first position parameter of a first alignment mark on a first wafer is determined by using a optical beam; a second position parameter of a second alignment mark on a second wafer is determined with the optical beam, the optical beam has a property of transmitting through a wafer; a relative position between the first wafer and the second wafer is adjusted with the optical beam according to the first position parameter and the second position parameter until the relative position between the first alignment mark and the second alignment mark satisfies a predetermined bonding condition; and the first wafer is bonded to the second wafer.

Abstract: A method and apparatus for wafer bonding are provided. The method includes: determining a first position parameter of a first alignment mark on a first wafer and a second position parameter of a second alignment mark on a second wafer by using a first type of optical beam; moving the first wafer and the second wafer to be opposite to each other by changing a relative position between the first wafer and the second wafer according to the first position parameter and the second position parameter, to achieve a first alignment of the first alignment mark and the second alignment mark; adjusting the relative position between the first wafer and the second wafer by using a second type of optical beam, to achieve a second alignment of the first alignment mark and the second alignment mark; and bonding the first wafer to the second wafer.

Abstract: A method and apparatus for wafer bonding. The method includes that, a first position parameter of a first alignment mark on a first wafer is determined by using a optical beam; a second position parameter of a second alignment mark on a second wafer is determined with the optical beam, the optical beam has a property of transmitting through a wafer; a relative position between the first wafer and the second wafer is adjusted with the optical beam according to the first position parameter and the second position parameter until the relative position between the first alignment mark and the second alignment mark satisfies a predetermined bonding condition; and the first wafer is bonded to the second wafer.

Abstract: Embodiments of apparatus for flipping a semiconductor device and method of using the same are disclosed. In an example, an apparatus for flipping a semiconductor device includes at least one fixture and a rotation unit connected to the at least one fixture. The at least one fixture is configured to hold the semiconductor device by simultaneously pressing a first surface and a second surface of the semiconductor device. The first surface is opposite to the second surface. The rotation unit is configured to rotate the at least one fixture to flip the semiconductor device held by the at least one fixture.

Abstract: Embodiments of wafer bonding methods are disclosed. In an example, a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer and a front surface of a second wafer. After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer and the front surface of the second wafer. After the second plasma activation treatment, the first wafer and the second wafer are bonded such that the treated front surface of the first wafer is in physical contact with the treated front surface of the second wafer.

Abstract: Embodiments of wafer bonding methods are disclosed. In an example, a first plasma activation treatment based on oxygen or an inert gas is performed on a front surface of a first wafer and a front surface of a second wafer. After the first plasma activation treatment, a second plasma activation treatment based on water molecules is performed on the front surface of the first wafer and the front surface of the second wafer. After the second plasma activation treatment, the first wafer and the second wafer are bonded such that the treated front surface of the first wafer is in physical contact with the treated front surface of the second wafer.

Abstract: Embodiments of apparatus for flipping a semiconductor device and method of using the same are disclosed. In an example, an apparatus for flipping a semiconductor device includes at least one fixture and a rotation unit connected to the at least one fixture. The at least one fixture is configured to hold the semiconductor device by simultaneously pressing a first surface and a second surface of the semiconductor device. The first surface is opposite to the second surface. The rotation unit is configured to rotate the at least one fixture to flip the semiconductor device held by the at least one fixture.