Abstract: A battery cathode includes: a current collector; and a coating applied to the current collector, the coating including: conductive carbon; polyvinylidene fluoride binder polymer; acid-functionalized dispersant polymer; and electrochemically active layered metal oxide.

Abstract: Photonically steered impedance surface antennas are disclosed. A disclosed example apparatus includes a semiconductor substrate to be communicatively coupled to a radio frequency (RF) source, an at least partially transparent dielectric layer, the semiconductor substrate at a first side of the at least partially transparent dielectric layer, an at least partially transparent conductive film at a second side of the at least partially transparent dielectric layer that is opposite the first side of the at least partially transparent dielectric layer, and an illumination source to illuminate at least a portion of the semiconductor substrate to generate a photoinduced solid-state plasma pattern that beam steers an RF signal corresponding to the RF source.

Abstract: Embodiments disclosed herein include through silicon waveguides and methods of forming such waveguides. In an embodiment, a through silicon waveguide comprises a substrate, where the substrate comprises silicon. In an embodiment, a waveguide is provided through the substrate. In an embodiment, the waveguide comprises a waveguide structure. and a cladding around the waveguide structure.

Abstract: Embodiments disclosed herein include a photonics module and methods of forming photonics modules. In an embodiment, the photonics module comprises a waveguide, and a modulator adjacent to the waveguide. In an embodiment, the modulator comprises a PN junction with a P-doped region and an N-doped region, where the PN junction is vertically oriented so that the P-doped region is over the N-doped region.

Abstract: An optical modulator includes a substrate, a first dielectric layer over the substrate, a rib waveguide including a PN junction on the first dielectric, a second dielectric layer over the rib waveguide and a stressor layer including a metal, where the first or the second dielectric is between the stressor layer and the PN junction.

Abstract: A photodetector structure over a partial length of a silicon waveguide structure within a photonic integrated circuit (PIC) chip. The photodetector structure is embedded within a cladding material surrounding the waveguide structure. The photodetector structure includes an absorption region, for example comprising Ge. A sidewall of the cladding material may be lined with a sacrificial spacer. After forming the absorption region, the sacrificial spacer may be removed and passivation material formed over a sidewall of the absorption region. Between the absorption region an impurity-doped portion of the waveguide structure there may be a carrier multiplication region, for example comprising crystalline silicon. If present, edge facets of the carrier multiplication region may be protected by a spacer material during the formation of an impurity-doped charge carrier layer. Occurrence of edge facets may be mitigated by embedding a portion of the photodetector structure with a thickness of the waveguide structure.

Abstract: A radar device may include a digital to analog converter (DAC) stage. The DAC stage may generate a plurality of analog signals. The DAC stage may generate a different analog signal for each transmitter chain of a plurality of transmitter chains. Each analog signal of the plurality of analog signals may represent a single digital signal. Each transmitter chain of the plurality of transmitter chains may include a transmit chain portion and switched analog beamforming network (BFN). The transmit chain portion may generate a plurality of intermediate analog signals representative of the corresponding analog signal. The switched analog BFN may generate a plurality of analog transmit signals for an intermediate analog signal of the plurality of intermediate analog signals. The plurality of analog transmit signals may include a beam formed in accordance with a state of the switched analog BFN.

Abstract: Various embodiments of a monolithic avalanche photodiode (APD) are described, which may be fabricated on a silicon-on-insulator substrate. The monolithic APD includes an optical waveguide that guides an incident light to an active region of the APD. An optical coupler is integrally formed with the optical waveguide to capture the incident light. The monolithic APD also includes an optical reflector to reflect a portion of the incident light that is not readily captured by the optical coupler back to the optical coupler for further capturing. The active region includes an absorption layer for converting the incident light into a photocurrent, an epitaxial structure for amplifying the photocurrent by avalanche multiplication, as well as a pair of electrical conductors for conducting the amplified photocurrent.

Abstract: In one embodiment, an apparatus includes a substrate, an oxide layer on the substrate, a silicon layer on the oxide layer, which includes a waveguide region and etched regions adjacent to the waveguide region, a germanium layer on the silicon layer and adjacent the waveguide region of the silicon layer, and a resistive element adjacent to the germanium layer to provide heat to the germanium layer in response to a current applied to the resistive element.

Abstract: Embedded three-dimensional electrode capacitors, and methods of fabricating three-dimensional electrode capacitors, are described. In an example, an integrated circuit structure includes a first metallization layer above a substrate, the first metallization layer having a first conductive structure in a first dielectric layer, the first conductive structure having a honeycomb pattern. An insulator structure is on the first conductive structure of the first metallization layer. A second metallization layer is above the first metallization layer, the second metallization layer having a second conductive structure in a second dielectric layer, the second conductive structure on the insulator structure, and the second conductive structure having the honeycomb pattern.

Abstract: An optical modulator includes a substrate, a first dielectric layer over the substrate, a rib waveguide including a PN junction on the first dielectric, a second dielectric layer over the rib waveguide and a stressor layer including a metal, where the first or the second dielectric is between the stressor layer and the PN junction.

Abstract: Embodiments of the present disclosure are directed to a silicon photonics integrated apparatus that includes an input to receive an optical signal, a splitter optically coupled to the input to split the optical signal at a first path and a second path, a polarization beam splitter and rotator (PBSR) optically coupled with the first path or the second path, and a semiconductor optical amplifier (SOA) optically coupled with the first path or the second path and disposed between the splitter and the PBSR. Other embodiments may be described and/or claimed.

Abstract: Various embodiments of a monolithic avalanche photodiode (APD) are described, which may be fabricated on a silicon-on-insulator substrate. The monolithic APD includes an optical waveguide that guides an incident light to an active region of the APD. An optical coupler is integrally formed with the optical waveguide to capture the incident light. The monolithic APD also includes an optical reflector to reflect a portion of the incident light that is not readily captured by the optical coupler back to the optical coupler for further capturing. The active region includes an absorption layer for converting the incident light into a photocurrent, an epitaxial structure for amplifying the photocurrent by avalanche multiplication, as well as a pair of electrical conductors for conducting the amplified photocurrent.

Abstract: Various embodiments of a monolithic electro-optical (E-O) modulator are described herein. The monolithic E-O modulator may include a phase shifter having a suspended structure. The suspended structure may be realized by partially or completely removing silicon material underneath the active area of the phase shifter to form a void in the bulk silicon substrate supporting the phase shifter. The suspended structure may be utilized to result in a lower radio-frequency loss and an effective group refractive index of the phase shifter that is closer to the refractive index of silicon waveguides or optical fibers, both advantageous to enhancing the performance of the E-O modulator such as a higher operating bandwidth.

Abstract: Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.

Abstract: Various embodiments of a monolithic electro-optical (E-O) modulator are described herein. The monolithic E-O modulator may include a phase shifter having a suspended structure. The suspended structure may be realized by partially or completely removing silicon material underneath the active area of the phase shifter to form a void in the bulk silicon substrate supporting the phase shifter. The suspended structure may be utilized to result in a lower radio-frequency loss and an effective group refractive index of the phase shifter that is closer to the refractive index of silicon waveguides or optical fibers, both advantageous to enhancing the performance of the E-O modulator such as a higher operating bandwidth.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. In one aspect, a photonic device may include a substrate and a functional layer disposed on the substrate. The substrate may be made of a first material and the functional layer may be made of a second material that is different from the first material. The photonic device may also include a compensation region formed at an interface region between the substrate and the functional layer. The compensation region may be doped with compensation dopants such that a first carrier concentration around the interface region of function layer is reduced and a second carrier concentration in a bulk region of functional layer is reduced.

Abstract: Various embodiments of a compensated photonic device structure and fabrication method thereof are described herein. A photonic device may include a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, a Si waveguide and an n-type contact layer formed on the BOX layer, a Si multiplication layer disposed on the n-type contact layer, a p-type Si charge layer disposed on the Si multiplication layer, a germanium (Ge) absorption layer disposed on the p-type Si charge layer, a p-type contact layer disposed on the Ge absorption layer, and a metal layer disposed on the p-type contact layer. A compensated region may be formed between the p-type Si charge layer and the Ge absorption layer with a portion of the compensated region in the p-type Si charge layer and another portion of the compensated region in the Ge absorption layer.

Abstract: Various embodiments of a fully integrated avalanche photodiode receiver and manufacturing method thereof are described herein. A photonic device includes a silicon-on-insulator (SOI) substrate with a buried oxide (BOX) layer therein, an avalanche photodiode integrated with the SOI substrate, a capacitor integrated with the SOI substrate, a resistor integrated with the SOI substrate, and silicon passive waveguides as well as bonding pads integrated with the SOI substrate.

Abstract: Avalanche photodiodes (APDs) having at least one top stressor layer disposed on a germanium (Ge) absorption layer are described herein. The top stressor layer can increase the tensile strain of the Ge absorption layer, thus extending the absorption of APDs to longer wavelengths beyond 1550 nm. In one embodiment, the top stressor layer has a four-layer structure, including an amorphous silicon (Si) layer disposed on the Ge absorption layer; a first silicon dioxide (SiO2) layer disposed on the amorphous Si layer, a silicon nitride (SiN) layer disposed on the first SiO2 layer, and a second SiO2 layer disposed on the SiN layer. The Ge absorption layer can be further doped by p-type dopants. The doping concentration of p-type dopants is controlled such that a graded doping profile is formed within the Ge absorption layer to decrease the dark currents in APDs.