Abstract: A thin film for an optoelectronic device includes a layered 2D perovskite material. The thin film including the layered 2D perovskite material forms a substantially or nearly single-crystalline highly uniform thin film with strongly preferential out-of-plane alignment of the inorganic perovskite layers. This single-crystalline, highly uniform, and highly aligned thin film of the layered 2D perovskite material may thereby facilitate efficient charge transport in an optoelectronic device.

Abstract: A method of using electron diffraction to obtain PDFs from crystalline, nanocrystalline, and amorphous inorganic, organic, and organometallic compound.

Abstract: A method of using electron diffraction to obtain PDFs from crystalline, nanocrystalline, and amorphous inorganic, organic, and organometallic compound.

Abstract: Chalcogenide compounds with cation exchange capability and methods of using the compounds are described. Compounds of the general formula A2xMxSn3-xS6 are described wherein x is 0.1-0.95, A is Li+, Na+, K+ or Rb+ and M is Mn2+, Mg2+, Zn2+, Fe2+, Co2+ or Ni2+. Compounds of the general formula H2xMxSn3-xS6 are also described wherein x is 0.1-0.95 and M=Mn2+, Mg2+, Zn2+, Fe2+, Co2+ or Ni2+. The compounds can be layered compounds. The compounds are capable of intercalation of Cs+, Sr2+, Hg2+, Pb2+, Cd2+, and/or Ag+ ions. A process involving contacting the compounds with a solution comprising one or more ions including Cs+, Sr2+, Hg2+, Pb2+, Cd2+, and/or Ag+ is also provided. The one or more ions can be removed from the solution by the compounds. A process comprising contacting compounds of the general formula A2xMxSn3-xS6 with a solution containing UO22+, Th4+ or Pu4+ ions is also described.

Abstract: A thermoelectric material of the general formula Ag1?XMmM?Q2+m, wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M? is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8?m?24; and 0.01?x?0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M?, and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.

Abstract: Chalcogenide compounds with cation exchange capability and methods of using the compounds are described. Compounds of the general formula A2xMxSn3-xS6 are described wherein x is 0.1-0.95, A is Li+, Na+, K+ or Rb+ and M is Mn2+, Mg2+, Zn2+, Fe2+, Co2+ or Ni2+. Compounds of the general formula H2xMxSn3-xS6 are also described wherein x is 0.1-0.95 and M=Mn2+, Mg2+, Zn2+, Fe2+, Co2+ or Ni2+. The compounds can be layered compounds. The compounds are capable of intercalation of Cs+, Sr2+, Hg2+, Pb2+, Cd2+, and/or Ag+ ions. A process involving contacting the compounds with a solution comprising one or more ions including Cs+, Sr2+, Hg2+, Pb2+, Cd2+, and/or Ag+ is also provided. The one or more ions can be removed from the solution by the compounds. A process comprising contacting compounds of the general formula A2xMxSn3-xS6 with a solution containing UO22+, Th4+ or Pu4+ ions is also described.

Abstract: The invention relates to a thermoelectrically active p- or n-conductive semiconductor material constituted by a compound of the general formula (I) (PbTe)1-x(Sn2±ySb2±zTe5)x ??(I) with 0.0001?x?0.5, 0?y<2 and 0?z<2, wherein 0 to 10% by weight of the compound may be replaced by other metals or metal compounds, wherein the semiconductor material has a Seebeck coefficient of at least |S|?60 ?V/K at a temperature of 25° C. and electrical conductivity of at least 150 S/cm and power factor of at least 5 ?W/(cm·K2), further relates to a process for the preparation of such semiconductor materials, as well as to generators and Peltier arrangements containing them.

Abstract: A thermoelectric material of the general formula Ag1-XMmM?Q2+m, wherein M is selected from the group consisting of Pb, Sn, Ca, Sr, Ba, divalent transition metals, and combinations thereof; M? is selected from the group consisting of Bi, Sb, and combinations thereof; Q is selected from the group consisting of Se, Te, S, and combinations thereof; 8?m?24; and 0.01?x ?0.7. In embodiments of the invention, the compositions exhibit n-type semiconductor properties. In preferred embodiments, x is from 0.1 to 0.3, and m is from 10 to 18. The compositions may be synthesized by adding stoichiometric amounts of starting materials comprising Ag, M, M?, and Q to a reaction vessel, heating the starting materials to a temperature and for a period of time sufficient to melt the materials, and cooling the reaction product at a controlled rate of cooling.

Abstract: A process for producing bulk thermoelectric compositions containing nanoscale inclusions is described. The thermoelectric compositions have a higher figure of merit (ZT) than without the inclusions. The compositions are useful for power generation and in heat pumps for instance.

Abstract: Phase-change compounds, and optical storage recording media, for recording and/or storage of data, comprising such compounds, according to the formula XSbySz; wherein X is selected from the group consisting of K, Rb, Ti, Na, Li, Cs and mixtures thereof; and wherein y is about 1 or about 5, and z is about 1 or about B. Preferably, X is K, y is 5 and z is B. Also provided are optical recording media comprising a layer of the phase-change material and methods of creating a reversible phasechange by irradiating the material with a laser radiation.

Abstract: A thermoelectric composition comprises a material represented by the general formula (AgaX1?a)1±x(SnbPb1?b)mM?1?yQ2+m wherein X is Na, K, or a combination of Na and K in any proportion; M? is a trivalent element selected from the group consisting of Sb, Bi, lanthanide elements, and combinations thereof; Q is a chalcogenide element selected from the group consisting of S, Te, Se, and combinations thereof; a and b are independently >0 and ?1; x and y are independently >0 and <1; and 2?m?30. The compositions exhibit a figure of merit ZT of up to about 1.4 or higher, and are useful as p-type semiconductors in thermoelectric devices.