Abstract: A light emitting device comprising: a polar template; a p-type layer grown thereon; the p-type layer having a first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector that is larger than the first polarization vector; the n-type layer and p-type layer forming an interface. Another preferred embodiment light emitting device comprises a polar template; an n-type layer grown on the template; the n-type layer having a first polarization vector having a first projection relative to a growth direction; a p-type layer grown on the n-type layer having a second polarization vector that is larger than the first polarization vector. In both embodiments, the first polarization vector in the p-layer and second polarization vector in the n-layer create discontinuity at the interface resulting in a negative charge appearing at the interface.

Abstract: In a preferred embodiment, a light emitting device comprising: a polar template; a p-type layer grown on the polar template; the p-type layer having a first polarization vector; the first polarization vector having a first projection relative to a growth direction; an n-type layer grown on the p-type layer; the n-type layer having a second polarization vector; the second polarization vector having a second projection relative to said growth direction that is larger than the first projection of the first polarization vector for the p-type layer; the n-type layer and p-type layer forming an interface; whereby the first polarization vector in the p-layer and second polarization vector in the n-layer create a discontinuity at the interface resulting in a negative charge appearing at the interface.

Abstract: Transition metal doped II–V nitride material films exhibit ferromagnetic properties at or above room temperature. A III–V nitride material film may be doped with a transition metal film in-situ during metal-organic chemical vapor deposition and/or by solid-state diffusion processes. Doping of the III–V nitride material films may proceed in the absence of hydrogen and/or in the presence of nitrogen. In some embodiments, transition metal-doped III–V nitride material films comprise carbon concentrations of at least 1017 atoms per cubic centimeter.

Abstract: Transition metal doped III-V nitride material films exhibit ferromagnetic properties at or above room temperature. A III-V nitride material film may be doped with a transition metal film in-situ during metal-organic chemical vapor deposition and/or by solid-state diffusion processes. Doping of the III-V nitride material films may proceed in the absence of hydrogen and/or in the presence of nitrogen. In some embodiments, transition metal-doped III-V nitride material films comprise carbon concentrations of at least 1017 atoms per cubic centimeter.