Abstract: An electrophotographic imaging system utilizing a member comprising at least one photoconductive layer and an overcoating layer comprising a film forming continuous phase comprising charge transport molecules and charge injection enabling sites comprising finely divided fullerene particles, the insulating overcoating layer being substantially transparent to activating radiation to which the photoconductive layer is sensitive and substantially electrically insulating at low electrical fields.

Abstract: A surface layer on an imaging member has a surface roughness which reduces the force necessary for blade cleaning, reduces blade edge truck, reduces blade/substrate friction, inhibits the formation of toner-type deposits on the imaging surface, and/or reduces or eliminates light interference patterns resulting from coherent light, for example, from a raster output scanner.

Abstract: A light valve comprising a first transparent electrically insulating layer, a first transparent electrically conductive layer, an electro-optic imaging medium layer, a dielectric mirror, a light blocking layer comprising an organic dye or organic pigment, a photoconductor layer comprising selenium, a second transparent electrically conductive layer and a second transparent layer. This light valve may be utilized in systems which include an imaging light source and a read-out light source.

Abstract: A process is disclosed for ascertaining electrical discharge properties of an electrophotographic imaging member including the steps of (a) providing at least one electrophotographic imaging member comprising an electrically conductive layer and at least one photoconductive layer, (b) contacting the surface of the electrophotographic imaging member with a substantially transparent electrode and applying an electric potential or an electric current to form an electric field across the photoconductive layer, (c) terminating the applying of the electric potential or the electric current, (d) exposing the photoconductive layer to activating radiation to discharge the electrophotographic imaging member, (e) repeating steps (b), (c) and (d), and (f) measuring the potential across the photoconductive layer during steps (b), (c) and (d) as a function of time by means of an electrostatic meter coupled to the electrode.

Abstract: A process is disclosed for forming at least one thin substantially uniform fluid coating comprising polymeric film forming material on a cylindrical mandrel, solidifying the fluid coating to form a uniform solid coating and separating the uniform solid coating from the mandrel. The process may comprise forming at least one thin substantially uniform fluid coating comprising polymeric film forming material around a cylindrical mandrel, the mandrel having a larger mass or lower thermal conductivity than the polymeric film forming material and a critical surface tension greater than the surface tension of the fluid coating, solidifying the fluid coating to form at least one thin substantially uniform solid coating comprising the polymeric film forming material around the cylindrical mandrel, heating both the uniform solid coating and the mandrel to a temperature at least above the apparent T.sub.

Abstract: An electrophotographic imaging system utilizing a member comprising at least one photoconductive layer and an overcoating layer comprising a film forming continuous phase comprising charge transport molecules and finely divided charge injection enabling particles dispersed in the continuous phase, the insulating overcoating layer being substantially transparent to activating radiation to which the photoconductive layer is sensitive and substantially electrically insulating at low electrical fields.

Abstract: This invention is generally directed to inorganic overcoated photo-responsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99.5 percent to about 99.9 percent, the percentage by weight of arsenic present is from about 0.1 percent to about 0.5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; a hole trapping layer overcoated on the generator layer, the trapping layer being comprised of a halogen doped selenium arsenic alloy, containing from about 95 percent selenium, to 99.

Abstract: This invention is generally directed to inorganic overcoated photoresponsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99.5 percent to about 99.9 percent, the percentage by weight of arsenic present is from about 0.1 percent to about 0.5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; and a layer of insulating organic resin overlaying the charge generating layer.

Abstract: This invention is generally directed to inorganic overcoated photoresponsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99.5 percent to about 99.9 percent, the percentage by weight of arsenic present is from about 0.1 percent to about 0.5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; and a layer of insulating organic resin overlaying the charge generating layer.

Abstract: This invention is generally directed to inorganic overcoated photo-responsive devices comprised of a substrate, a layer of hole injecting material capable of injecting holes into a layer on its surface, this layer being comprised of trigonal selenium, a hole transport layer in operative contact with the hole injecting layer, this layer being comprised of a halogen doped selenium arsenic alloy, wherein the percentage by weight of selenium present is from about 99.5 percent to about 99.9 percent, the percentage by weight of arsenic present is from about 0.1 percent to about 0.5 percent, and the halogen is present in an amount of from about 10 parts per million, to about 200 parts per million; a charge generating layer overcoated on the hole transport layer, comprised of an inorganic photoconductive material; a hole trapping layer overcoated on the generator layer, the trapping layer being comprised of a halogen doped selenium arsenic alloy, containing from about 95 percent selenium, to 99.