Patents by Inventor Mi Rae YOUM
Mi Rae YOUM has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11634364Abstract: The present disclosure provides a boron carbide composite material having a novel composition with excellent mechanical properties, and a production method therefor. The boron carbide composite material has high fracture toughness and may be applied as a lightweight bulletproof ceramic material. The boron carbide composite material is a boron carbide/silicon carbide/titanium boride/graphite (B4C—SiC—TiB2—C) composite material. The composite material may overcome a technical limitation on increasing the fracture toughness of the boron carbide composite material, and may be produced as a high-density boron carbide composite material using a reactive hot-pressing sintering process at a relatively low temperature.Type: GrantFiled: February 24, 2021Date of Patent: April 25, 2023Assignee: Korea Institute of Science and TechnoloyInventors: Sang Whan Park, Mi Rae Youm, Sung Il Yun, Jun Hyung Park
-
Publication number: 20210269364Abstract: The present disclosure provides a boron carbide composite material having a novel composition with excellent mechanical properties, and a production method therefor. The boron carbide composite material has high fracture toughness and may be applied as a lightweight bulletproof ceramic material. The boron carbide composite material is a boron carbide/silicon carbide/titanium boride/graphite (B4C—SiC—TiB2—C) composite material. The composite material may overcome a technical limitation on increasing the fracture toughness of the boron carbide composite material, and may be produced as a high-density boron carbide composite material using a reactive hot-pressing sintering process at a relatively low temperature.Type: ApplicationFiled: February 24, 2021Publication date: September 2, 2021Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Whan PARK, Mi Rae YOUM, SUNG IL YUN, Jun Hyung PARK
-
Publication number: 20210163301Abstract: The present disclosure provide a method for producing large granular high-purity ?-phase silicon carbide powders using a silicon dioxide/carbon composite, the method including: producing a gel in which the carbonaceous compound is dispersed in a silicon dioxide network structure through a sol-gel process using starting materials including liquid phase silicon containing compounds and liquid phase carbonaceous compounds; subjecting the gel to first heat treatment to thermally decompose the carbon carbonaceous compound, thereby producing a silicon dioxide/carbon composite including nano-sized carbon particles; and subjecting the silicon dioxide/carbon composite to second heat treatment at a higher temperature than that of the first heat treatment to obtain large granular high-purity ?-phase silicon carbide powders.Type: ApplicationFiled: November 25, 2020Publication date: June 3, 2021Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Whan PARK, Mi Rae YOUM, SUNG IL YUN
-
Patent number: 10730753Abstract: The present invention relates to an eco-friendly method for preparing a porous silicon carbide structure, which is capable of preparing a porous silicon carbide structure having meso- or macro-sized pores without using a harmful phenolic resin as a carbon source.Type: GrantFiled: October 26, 2018Date of Patent: August 4, 2020Assignee: Korea Institute of Science and TechnologyInventors: Sang Whan Park, Mi Rae Youm, Sung Il Yun
-
Patent number: 10688478Abstract: The present invention relates to a method for preparing a metal catalyst (Ni, Co, etc.)-supported porous silicon carbide structure having meso- to macro-sized pores, high porosity and superior mechanical properties. Unlike the existing method wherein a porous silicon carbide structure is prepared and then the metal catalyst is infiltrated therein, the preparation of the porous silicon carbide structure and the supporting of the metal catalyst occur at the same time by the mixing metal catalyst material and starting materials. As a result, the metal catalyst is distributed uniformly in the porous silicon carbide structure and it is possible to locate a desired amount of the metal catalyst inside the porous silicon carbide structure.Type: GrantFiled: October 24, 2018Date of Patent: June 23, 2020Assignee: Korea Institute of Science and TechnologyInventors: Sang Whan Park, Mi Rae Youm, Sung Il Yun
-
Publication number: 20190160454Abstract: The present invention relates to a method for preparing a metal catalyst (Ni, Co, etc.)-supported porous silicon carbide structure having meso- to macro-sized pores, high porosity and superior mechanical properties. Unlike the existing method wherein a porous silicon carbide structure is prepared and then the metal catalyst is infiltrated therein, the preparation of the porous silicon carbide structure and the supporting of the metal catalyst occur at the same time by the mixing metal catalyst material and starting materials. As a result, the metal catalyst is distributed uniformly in the porous silicon carbide structure and it is possible to locate a desired amount of the metal catalyst inside the porous silicon carbide structure.Type: ApplicationFiled: October 24, 2018Publication date: May 30, 2019Applicant: Korea Institute of Science and TechnologyInventors: Sang Whan PARK, Mi Rae YOUM, Sung Il YUN
-
Publication number: 20190144287Abstract: The present invention relates to an eco-friendly method for preparing a porous silicon carbide structure, which is capable of preparing a porous silicon carbide structure having meso- or macro-sized pores without using a harmful phenolic resin as a carbon source.Type: ApplicationFiled: October 26, 2018Publication date: May 16, 2019Applicant: Korea Institute of Science and TechnologyInventors: Sang Whan PARK, Mi Rae YOUM, Sung Il YUN
-
Patent number: 10106423Abstract: The present invention relates to a method for preparing an ultrahigh-purity silicon carbide powder, more particularly to a method for preparing an ultrahigh-purity silicon carbide granular powder by preparing a gel wherein a silicon compound and a carbon compound are uniformly dispersed via a sol-gel process using a liquid state silicon compound and a solid or liquid state carbon compound of varying purities as raw materials, preparing a silicon dioxide-carbon (SiO2—C) composite by pyrolyzing the prepared gel, preparing a silicon carbide-silicon dioxide-carbon (SiC—SiO2—C) composite powder via two-step carbothermal reduction of the prepared silicon dioxide-carbon composite, adding a silicon metal and then conducting carbonization and carbothermal reduction at the same time by heat treating, thereby growing the synthesized silicon carbide particle with an increased yield of the silicon carbide.Type: GrantFiled: March 17, 2016Date of Patent: October 23, 2018Assignee: Korea Institute of Science and TechnologyInventors: Sang Whan Park, Mi Rae Youm, Sung Il Youn, Gyoung Sun Cho
-
Patent number: 9994454Abstract: The present disclosure relates to porous silicon dioxide-carbon composites and a method for preparing high-purity ?-phase silicon carbide granular powders using the same.Type: GrantFiled: March 21, 2016Date of Patent: June 12, 2018Assignee: Korea Institute of Science and TechnologyInventors: Sang Whan Park, Mi Rae Youm, Sung Il Youn, Gyoung Sun Cho
-
Publication number: 20170081197Abstract: The present disclosure relates to porous silicon dioxide-carbon composites and a method for preparing high-purity ?-phase silicon carbide granular powders using the same.Type: ApplicationFiled: March 21, 2016Publication date: March 23, 2017Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Whan PARK, Mi Rae YOUM, Sung Il YOUN, Gyoung Sun CHO
-
Publication number: 20170073233Abstract: The present invention relates to a method for preparing an ultrahigh-purity silicon carbide powder, more particularly to a method for preparing an ultrahigh-purity silicon carbide granular powder by preparing a gel wherein a silicon compound and a carbon compound are uniformly dispersed via a sol-gel process using a liquid state silicon compound and a solid or liquid state carbon compound of varying purities as raw materials, preparing a silicon dioxide-carbon (SiO2—C) composite by pyrolyzing the prepared gel, preparing a silicon carbide-silicon dioxide-carbon (SiC—SiO2—C) composite powder via two-step carbothermal reduction of the prepared silicon dioxide-carbon composite, adding a silicon metal and then conducting carbonization and carbothermal reduction at the same time by heat treating, thereby growing the synthesized silicon carbide particle with an increased yield of the silicon carbide.Type: ApplicationFiled: March 17, 2016Publication date: March 16, 2017Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Whan PARK, Mi Rae YOUM, Sung Il YOUN, Gyoung Sun CHO
-
Patent number: 9487405Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.Type: GrantFiled: March 14, 2013Date of Patent: November 8, 2016Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Whan Park, Kyoung Sop Han, Sung Ho Yun, Jin Oh Yang, Gyoung Sun Cho, Mi Rae Youm, Yung Chul Jo
-
Publication number: 20130243682Abstract: Disclosed herein is a method for manufacturing SiC powders with a high purity, and more particularly, a method for manufacturing SiC powders with a high purity by reating a solid phase carbon source as raw materials with gas phase silicon sources generated from a starting material composed of metallic silicon and silicon dioxide powders and, in which it is easy to control the size and crystalline phase of the SiC powders by changing the compositions of the gas phase silicon source to the solid phase carbon source mole ratio, and the temperature and time for the heat treatment.Type: ApplicationFiled: March 14, 2013Publication date: September 19, 2013Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGYInventors: Sang Whan PARK, Kyoung Sop HAN, Sung Ho YUN, Jin Oh YANG, Gyoung Sun CHO, Mi Rae YOUM, Yung Chul JO