Abstract: A display device includes a plurality of pixels. Each pixel includes a first transistor that controls an amount of current received from a first power supply voltage line connected via a second node to an organic light emitting diode in response to a voltage of a first node, a second transistor connected between a data line and the second node and that includes a first gate electrode connected to a first scan line, a light emitting line connected to a gate electrode of at least one light emitting transistor located in a current path between the first power supply voltage line and the organic light emitting diode, and a seventh transistor connected between one of at least one second gate electrode of the second transistor and the light emitting line. Accordingly, a threshold voltage of a switching transistor included in each of the plurality of pixels may be negatively shifted.

Abstract: A display device includes a plurality of pixels. Each pixel includes a first transistor that controls an amount of current received from a first power supply voltage line connected via a second node to an organic light emitting diode in response to a voltage of a first node, a second transistor connected between a data line and the second node and that includes a first gate electrode connected to a first scan line, a light emitting line connected to a gate electrode of at least one light emitting transistor located in a current path between the first power supply voltage line and the organic light emitting diode, and a seventh transistor connected between one of at least one second gate electrode of the second transistor and the light emitting line. Accordingly, a threshold voltage of a switching transistor included in each of the plurality of pixels may be negatively shifted.

Abstract: A display device includes a plurality of pixels. Each pixel includes a first transistor that controls an amount of current received from a first power supply voltage line connected via a second node to an organic light emitting diode in response to a voltage of a first node, a second transistor connected between a data line and the second node and that includes a first gate electrode connected to a first scan line, a light emitting line connected to a gate electrode of at least one light emitting transistor located in a current path between the first power supply voltage line and the organic light emitting diode, and a seventh transistor connected between one of at least one second gate electrode of the second transistor and the light emitting line. Accordingly, a threshold voltage of a switching transistor included in each of the plurality of pixels may be negatively shifted.

Abstract: A display device includes a plurality of pixels. Each pixel includes a first transistor that controls an amount of current received from a first power supply voltage line connected via a second node to an organic light emitting diode in response to a voltage of a first node, a second transistor connected between a data line and the second node and that includes a first gate electrode connected to a first scan line, a light emitting line connected to a gate electrode of at least one light emitting transistor located in a current path between the first power supply voltage line and the organic light emitting diode, and a seventh transistor connected between one of at least one second gate electrode of the second transistor and the light emitting line. Accordingly, a threshold voltage of a switching transistor included in each of the plurality of pixels may be negatively shifted.

Abstract: A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.

Abstract: A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

Abstract: A display substrate includes a pixel switching element, a pixel electrode, a reference line, a control switching element, a bias line, a light sensing element, a sensing capacitor and a light blocking filter pattern. The pixel switching element is connected to a data line and a gate line, includes a first semiconductor pattern. The pixel electrode is connected to the pixel switching element. The reference line is in parallel with the data line. The control switching element is connected to the reference line and the gate line, includes a second semiconductor pattern. The bias line is in parallel with the gate line. The light sensing element is connected to the bias line and the control switching element, includes a third semiconductor pattern. The sensing capacitor is connected to the light sensing element and a storage line. The light blocking filter pattern transmits a first light, and blocks a second light.

Abstract: A touch screen substrate includes a base substrate, a first switching element and a first sensing element which senses infrared light. The first switching element includes a first switching gate electrode, a first active pattern disposed on the first switching gate electrode, a first switching source electrode disposed on the first active pattern and a first switching drain electrode disposed apart from the first switching source electrode. The first sensing element includes a first sensing drain electrode connected to the first switching source electrode, a first sensing source electrode disposed apart from the first sensing drain electrode, a second active pattern disposed below the first sensing drain electrode and the first sensing source electrode and including a first amorphous layer, a doped amorphous layer and a second amorphous layer, and a first sensing gate electrode disposed on the first sensing drain electrode and the first sensing source electrode.

Abstract: The present invention relates to a visible ray sensor and a light sensor capable of improving photosensitivity by preventing photodegradation. The visible ray sensor may include: a substrate, a light blocking member formed on the substrate, and a visible ray sensing thin film transistor formed on the light blocking member. The light blocking member may be made of a transparent electrode, a band pass filter, or an opaque metal.

Abstract: A touch substrate includes a base substrate, a sensing element and a switching element. The sensing element is disposed over the base substrate, senses infrared light, and includes a sensing semiconductor pattern. The switching element is electrically connected to the sensing element, includes a material substantially the same as a material of the sensing semiconductor pattern, and includes a switching semiconductor pattern having a thickness different from a thickness of the sensing semiconductor pattern.

Abstract: An information detection device includes: a plurality of light sensing units each configured to detect light; a plurality of sensor scanning drivers each configured to apply sensor scanning signals to the light sensing units; a sensing signal processor configured to receive position information detected by the light sensing units; a plurality of bias applying units each configured to apply bias voltages to the light sensing units; wherein each bias applying unit applies a different polarity of bias voltage.

Abstract: In a display apparatus, a light sensor of a display includes a light sensing layer, a source electrode, a drain electrode, an insulating layer, and a gate electrode to sense light from an external source. The light sensing layer is disposed on the substrate to sense light, and the source and drain electrodes are disposed on the light sensing layer and are covered by the insulating layer. The gate electrode is disposed on the insulating layer. An edge of the gate electrode is disposed on the light sensing layer at least in an area where the light sensing layer is overlapped with the source and drain electrodes.

Abstract: An exemplary embodiment of the present invention provides a liquid crystal display including: a first insulating substrate; a light blocking member positioned on the first insulating substrate and having a frame portion defining openings for pixels; a step compensated pattern positioned on the first insulating substrate and in one of the openings; a second insulating substrate facing the first insulating substrate; a first electrode formed on the first insulating substrate in the same layer as a second domain dividing unit; a second electrode facing the first electrode and disposed in the same layer as the first domain dividing unit; and a liquid crystal layer interposed between the first electrode and the second electrode, wherein the step compensated pattern overlaps the first domain dividing unit or the second domain dividing unit.

Abstract: A photosensor includes a substrate, a gate line, and a data line disposed on the substrate. A thin film transistor is connected to the gate line and the data line. A first photo-sensing member is disposed on the substrate, and a first electrode is connected to the thin film transistor and the first photo-sensing member. A second photo-sensing member is disposed on the first photo-sensing member, and a second electrode is connected to the first electrode and the second photo-sensing member.

Abstract: A thin film transistor is provided. A thin film transistor according to an exemplary embodiment of the present invention includes: a substrate; a gate electrode disposed on the substrate; a gate insulating layer disposed on the gate electrode; a semiconductor layer disposed on the gate insulating layer; and a source electrode and a drain electrode disposed on a portion of the semiconductor layer, wherein the semiconductor layer includes an ohmic contact layer, a channel layer, and a buffer layer, the buffer layer disposed between the channel layer and the ohmic contact layer, and the source electrode and the drain electrode contact a surface of the ohmic contact layer.

Abstract: Provided are a sensor array substrate and a method of fabricating the same. The sensor array substrate includes: a substrate in which a switching element region and a sensor region that senses light are defined; a first semiconductor layer which is formed in the sensor region; a first gate electrode which is formed on the first semiconductor layer and overlaps the first semiconductor layer; a second gate electrode which is formed in the switching element region; a second semiconductor layer which is formed on the second gate electrode and overlaps the second gate electrode; and a light-blocking pattern which is formed on the second semiconductor layer and overlaps the second semiconductor layer, wherein the first semiconductor layer and the second semiconductor layer are disposed on different layers, and the second gate electrode and the light-blocking pattern are electrically connected to each other.

Abstract: A display device includes: a substrate; an infrared sensing transistor on the substrate; a readout transistor connected to the infrared sensing transistor; a power source line; and a light blocking member on the infrared sensing transistor, where the infrared sensing transistor includes a light blocking film on the substrate, a first gate electrode contacting and overlapping the light blocking film and connected to a power source line, a first semiconductor layer on the first gate electrode overlapping the light blocking film, and first source and drain electrodes on the first semiconductor layer, where the readout transistor includes a second gate electrode on the substrate, a second semiconductor layer on the second gate electrode and overlapping the second gate electrode, and second source and drain electrodes the second semiconductor layer, and where the power source line and the first gate electrode are at a same layer.

Abstract: A touch substrate includes a base substrate, a sensing element and a switching element. The sensing element is disposed over the base substrate, senses infrared light, and includes a sensing semiconductor pattern. The switching element is electrically connected to the sensing element, includes a material substantially the same as a material of the sensing semiconductor pattern, and includes a switching semiconductor pattern having a thickness different from a thickness of the sensing semiconductor pattern.

Abstract: A sensor array substrate, a display device including the sensor array substrate, and a method of manufacturing the sensor array substrate are provided. The sensor array substrate includes a substrate, a first sensor formed on a first pixel area of the substrate and configured to detect light, an overcoat layer formed on the first sensor, and a shield layer formed over the overcoat layer, wherein the shield layer overlaps the first sensor.

Abstract: An exemplary embodiment of the present invention provides a liquid crystal display including: a first insulating substrate; a light blocking member positioned on the first insulating substrate and having a frame portion defining openings for pixels; a step compensated pattern positioned on the first insulating substrate and in one of the openings; a second insulating substrate facing the first insulating substrate; a first electrode formed on the first insulating substrate in the same layer as a second domain dividing unit; a second electrode facing the first electrode and disposed in the same layer as the first domain dividing unit; and a liquid crystal layer interposed between the first electrode and the second electrode, wherein the step compensated pattern overlaps the first domain dividing unit or the second domain dividing unit.