Patents by Inventor Mianheng Jiang
Mianheng Jiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10539633Abstract: An ultrahigh resolution magnetic resonance imaging method and apparatus, the method comprises the following steps of: placing a test sample within an action range of a magnetic gradient source and a nano-scale superconducting quantum interference device, applying a static magnetic field on the test sample by a static magnetic source, and applying a nuclear magnetic resonance radio-frequency pulse on the test sample by a radio-frequency source to excite the test sample to cause nuclear magnetic resonance; directly coupling the nano-scale superconducting quantum interference device with the test sample to detect nuclear magnetic resonance spectrum signals generated by the test sample; establishing an image of the test sample according to the detected nuclear magnetic resonance spectrum signals and space distribution information of gradient magnetic fields generated by the magnetic gradient source.Type: GrantFiled: December 18, 2014Date of Patent: January 21, 2020Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Lei Chen, Zhen Wang, Xiaoming Xie, Mianheng Jiang
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Patent number: 10253428Abstract: The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.Type: GrantFiled: June 4, 2015Date of Patent: April 9, 2019Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Tianru Wu, Xuefu Zhang, Guangyuan Lu, Chao Yang, Haomin Wang, Xiaoming Xie, Mianheng Jiang
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Patent number: 10017878Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.Type: GrantFiled: March 26, 2015Date of Patent: July 10, 2018Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Haomin Wang, Shujie Tang, Guangyuan Lu, Tianru Wu, Da Jiang, Guqiao Ding, Xuefu Zhang, Hong Xie, Xiaoming Xie, Mianheng Jiang
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Publication number: 20180002831Abstract: The present invention provides a growth method of grapheme, which at least comprises the following steps: S1: providing an insulating substrate, placing the insulating substrate in a growth chamber; S2: heating the insulating substrate to a preset temperature, and introducing a gas containing catalytic element into the growth chamber; S3: feeding carbon source into the growth chamber and growing a graphene thin film on the insulating substrate. The present invention adopts a catalytic manner of introducing catalytic element, and rapid grows a high quality graphene on the insulating substrate, which avoids the transition process of the graphene, enables to improve the production yield of the graphene, reduces the growth cost of the graphene, and thus the mass production can be facilitated. The graphene grown by the present invention may be applied in the field of novel graphene electronic devices, graphene transparent conducting film, transparent conducting coating and the like.Type: ApplicationFiled: March 26, 2015Publication date: January 4, 2018Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: HAOMIN WANG, SHUJIE TANG, GUANGYUAN LU, TIANRU WU, DA JIANG, GUQIAO DING, XUEFU ZHANG, HONG XIE, XIAOMING XIE, MIANHENG JIANG
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Publication number: 20170130360Abstract: The present disclosure provides a local carbon-supply device and a method for preparing a wafer-level graphene single crystal by local carbon supply. The method includes: providing the local carbon-supply device; preparing a nickel-copper alloy substrate, placing the nickel-copper alloy substrate in the local carbon-supply device; placing the local carbon-supply device provided with the nickel-copper alloy substrate in a chamber of a chemical vapor-phase deposition system, and introducing a gaseous carbon source into the local carbon-supply device to grow the graphene single crystal on the nickel-copper alloy substrate. A graphene prepared by embodiments of the present disclosure has the advantages of good crystallinity of a crystal domain, simple preparation condition, low cost, a wider window of condition parameters required for growth, and good repeatability, which lays a foundation for wide application of the wafer-level graphene single crystal in a graphene apparatus and other fields.Type: ApplicationFiled: June 4, 2015Publication date: May 11, 2017Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Tianru WU, Xuefu ZHANG, Guangyuan LU, Chao YANG, Haomin WANG, Xiaoming XIE, Mianheng JIANG
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Publication number: 20170102440Abstract: An ultrahigh resolution magnetic resonance imaging method and apparatus, the method comprises the following steps of: placing a test sample within an action range of a magnetic gradient source and a nano-scale superconducting quantum interference device, applying a static magnetic field on the test sample by a static magnetic source, and applying a nuclear magnetic resonance radio-frequency pulse on the test sample by a radio-frequency source to excite the test sample to cause nuclear magnetic resonance; directly coupling the nano-scale superconducting quantum interference device with the test sample to detect nuclear magnetic resonance spectrum signals generated by the test sample; establishing an image of the test sample according to the detected nuclear magnetic resonance spectrum signals and space distribution information of gradient magnetic fields generated by the magnetic gradient source.Type: ApplicationFiled: December 18, 2014Publication date: April 13, 2017Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: LEI CHEN, ZHEN WANG, XIAOMING XIE, MIANHENG JIANG
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Patent number: 9570294Abstract: A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.Type: GrantFiled: July 20, 2015Date of Patent: February 14, 2017Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Haomin Wang, Li He, Lingxiu Chen, Hong Xie, Huishan Wang, Shujie Tang, Lei Li, Daoli Zhang, Xiaoming Xie, Mianheng Jiang
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Publication number: 20160260604Abstract: A preparation method of a graphene nanoribbon on h-BN, comprising: 1) forming a h-BN groove template with a nano ribbon-shaped groove structure on the h-BN by adopting a metal catalysis etching method; 2) growing a graphene nanoribbon in the h-BN groove template by adopting a chemical vapor deposition method. In the present invention, a CVD method is adopted to directly prepare a morphology controllable graphene nanoribbon on the h-BN, which helps to solve the long-term critical problem that the graphene is difficult to nucleate and grow on an insulating substrate, and to avoid the series of problems introduced by the complicated processes of the transferring of the graphene and the subsequent clipping manufacturing for a nanoribbon and the like.Type: ApplicationFiled: July 20, 2015Publication date: September 8, 2016Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: HAOMIN WANG, LI HE, LINGXIU CHEN, HONG XIE, HUISHAN WANG, SHUJIE TANG, LEI LI, DAOLI ZHANG, XIAOMING XIE, MIANHENG JIANG
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Patent number: 9328413Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.Type: GrantFiled: August 5, 2011Date of Patent: May 3, 2016Assignee: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMY OF SCIENCESInventors: Shujie Tang, Guqiao Ding, Xiaoming Xie, Ji Chen, Chen Wang, Mianheng Jiang
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Publication number: 20130078424Abstract: The present invention provides a hexagonal boron nitride (hBN) substrate with a monatomic layer step and a preparation method thereof, where a surface of the hBN substrate is cleaved to obtain a fresh cleavage plane, and then hBN is etched by using hydrogen at a high temperature to obtain a controllable and regular monatomic layer step. The present invention utilizes an anisotropic etching effect of hydrogen on the hBN and controls an etching rate and degree of the etching by adjusting a hydrogen proportion, the annealing temperature, and the annealing time, so as to achieve the objective of etching the regular monatomic layer step. The preparation process is compatible with the process of preparing graphene through a chemical vapor deposition (CVD) method, and is applicable to preparation of a graphene nanoribbon. The present invention is mainly applied to new graphene electronic devices.Type: ApplicationFiled: August 5, 2011Publication date: March 28, 2013Inventors: Guqiao Ding, Shujie Tang, Xiaoming Xie, Mianheng Jiang
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Publication number: 20130022813Abstract: A method for growing a graphene nanoribbon on an insulating substrate having a cleavage plane with atomic level flatness is provided, and belongs to the field of low-dimensional materials and new materials. The method includes the following steps. Step 1: Cleave an insulating substrate to obtain a cleavage plane with atomic level flatness, and prepare a single atomic layer step. Step 2: Directly grow a graphene nanoribbon on the insulating substrate having regular single atomic steps. In the method, a characteristic that nucleation energy of graphene on the atomic step is different from that on the flat cleavage plane is used, and conditions, such as the temperature, intensity of pressure and supersaturation degree of activated carbon atoms, are adjusted, so that the graphene grows only along a step edge into a graphene nanoribbon of an adjustable size. The method is mainly applied to the field of new-type graphene optoelectronic devices.Type: ApplicationFiled: August 5, 2011Publication date: January 24, 2013Applicant: SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY, CHINESE ACADEMYInventors: Shujie Tang, Guqiao Ding, Xiaoming Xie, Ji Chen, Chen Wang, Mianheng Jiang