Abstract: Embodiments of methods for improving hot plate substrate monitoring and control in a lithography system are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of an apparatus for improving hot plate substrate monitoring and control in a lithography system are generally described herein. Other embodiments may be described and claimed.

Abstract: Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.

Abstract: A system and method affecting mass transport to reduce or eliminate iso-dense bias in spin-on-dielectric (SOD) or spin-on-glass (SOG) processes use a nozzle to dispense the liquid dielectric and a separate nozzle for jetting N2 or other gas onto a semiconductor wafer. The gas is jetted onto the wafer shortly after spin-on-dielectric liquid is dispensed. The jetting of the gas in the spin-coating process increases the volumetric flow of the liquid coating material in the radial direction, which in turn reduces the field thickness above isolated or no patterned areas to that at the more densely patterned areas, thereby improving the uniformity of the spun-on dielectric thickness on the wafer.

Abstract: Methods and heat treatment apparatus for heating a substrate and any layer carried on the substrate during a bake process. A heat exchange gap between the substrate and a heated support is at least partially filled by a gas having a high thermal conductivity. The high thermal conductivity gas is introduced into the heat exchange gap by displacing a lower thermal conductivity originally present in the heat exchange gap when the substrate is loaded. Heat transfer across the heat exchange gap is mediated by the high thermal conductivity gas.

Abstract: An apparatus and method for applying a fluid spin-on material on a surface of first and second substrates. A spin coating device is configured to dispense the fluid spin-on material to form a first layer on the surface of the first substrate. A metrology tool is configured to measure a first thickness profile of the first layer and generate data representing the first thickness profile. A processing unit is electrically coupled with the metrology tool and is configured to analyze the data received from the metrology unit and to determine a variation in the first thickness profile. The processing unit then determines an adjustment to an operational parameter of the spin coating device predicted to reduce a variation in a second thickness profile of a second layer subsequently formed by the spin coating device on a second substrate.

Abstract: Embodiments of an apparatus and methods for heating a substrate and a sacrificial layer are generally described herein. Other embodiments may be described and claimed.

Abstract: A substrate, thermal treatment assembly and method of operating the thermal treatment assembly are described for controlling the temperature of a substrate An electrical potential is applied across two or more locations on the substrate in order to generate an electrical current through a portion of the substrate, thereby altering a temperature of the substrate. The electrical current may dissipate electrical energy in the form of thermal energy due to the intrinsic resistance of the portion of substrate to the flow of electrical current.

Abstract: Apparatus and method for heating a substrate in a bath containing a heated liquid inside a vessel of a thermal processing system. The liquid in the bath is heated and the substrate is brought into contact with the liquid in the bath. The substrate is heated to a process temperature by transferring heat energy from the heated liquid in the bath to the substrate. The substrate is removed from the heated liquid and dried before subsequent processing steps.

Abstract: A system and method affecting mass transport to reduce or eliminate iso-dense bias in spin-on-dielectric (SOD) or spin-on-glass (SOG) processes use a nozzle to dispense the liquid dielectric and a separate nozzle for jetting N2 or other gas onto a semiconductor wafer. The gas is jetted onto the wafer shortly after spin-on-dielectric liquid is dispensed. The jetting of the gas in the spin-coating process increases the volumetric flow of the liquid coating material in the radial direction, which in turn reduces the field thickness above isolated or no patterned areas to that at the more densely patterned areas, thereby improving the uniformity of the spun-on dielectric thickness on the wafer.