Patents by Inventor Michael A. Many

Michael A. Many has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Methods of forming patterns for semiconductor device structures
    Patent number: 9465287
    Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
    Type: Grant
    Filed: October 30, 2015
    Date of Patent: October 11, 2016
    Assignee: Micron Technology, Inc.
    Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
  • METHODS OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20160048074
    Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
    Type: Application
    Filed: October 30, 2015
    Publication date: February 18, 2016
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Scott L. Light, Yuan He, Michael A. Many, Michael Hyatt
  • Methods of forming patterns for semiconductor device structures
    Patent number: 9213239
    Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
    Type: Grant
    Filed: January 22, 2013
    Date of Patent: December 15, 2015
    Assignee: MICRON TECHNOLOGY, INC.
    Inventors: Scott Light, Yuan He, Michael A. Many, Michael Hyatt
  • METHODS OF FORMING PATTERNS FOR SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20140205952
    Abstract: Methods of forming a pattern in a semiconductor device structure include deprotecting an outer portion of a first photosensitive resist material, forming a second photosensitive resist material, exposing portions of the first and second photosensitive resist materials to radiation, and removing the deprotected outer portion of the first photosensitive resist material and the exposed portions of the first and second photosensitive resist materials. Additional methods include forming a first resist material over a substrate to include a first portion and a relatively thicker second portion, deprotecting substantially the entire first portion and an outer portion of the second portion while leaving an inner portion of the second portion protected, and forming a second resist material over the substrate. A portion of the second resist material is exposed to radiation, and deprotected and exposed portions of the first and second resist materials are removed.
    Type: Application
    Filed: January 22, 2013
    Publication date: July 24, 2014
    Applicant: Micron Technology, Inc.
    Inventors: Scott Light, Yuan He, Michael A. Many, Michael Hyatt