Abstract: An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature.

Abstract: An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature.

Abstract: An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature.

Abstract: A method for generating an electrode layer pattern in an organic functional device (101; 201) comprising a first transparent electrode layer (103; 203), a second electrode layer (104; 204) and an organic functional layer (102; 202) sandwiched between said first and second electrode layers (103, 104; 203, 204). The method comprises the steps of arranging (601) a laser (704; 804) to irradiate said organic functional device (701; 801) through said first transparent electrode layer (103; 203), selecting (602) a set of laser parameters in order to enable said laser (704; 804) to locally modify an electric conductivity of said second electrode layer (104; 204), and locally modifying, by said laser (704; 804) in accordance with said set of laser parameters, the electric conductivity of said second electrode layer (104; 204), thereby generating said electrode layer pattern.

Abstract: An organic light emitting diode comprising a first electrode layer, a second electrode layer, a stack of functional layers, including an organic light-emitting layer, sandwiched between said first electrode layer and said second electrode layer, and an passivation layer arranged adjacent to said first electrode layer is disclosed. The passivation layer reacts with the first electrode layer to form an oxide at a reaction temperature that is induced by an evolving short circuit between the first electrode layer and the second electrode layer. The passivation layer is unreactive at temperatures lower than the reaction temperature.

Abstract: An electro-optically active organic diode, for example an organic light emitting diode (OLED), comprises an anode electrode (102), a cathode electrode (122) and an electro-optically active organic layer (110) arranged in-between. A cover layer (124) is arranged in contact with a surface of the cathode layer (122) so that the cathode layer (122) is positioned between the organic layer (110) and the cover layer (124), which is formed of a substantially inert material with respect to a cathode layer (122) material in contact with said cover layer (124). The inert material is deposited on said surface of the cathode layer (122) so that the complete surface is covered and surface defects eliminated. A short protection layer (120) is further arranged between said cathode electrode (122) and said electro-optically active organic layer (110), and adjacent to said cathode electrode (122), and is formed of an inorganic semiconductor material.

Abstract: A stacked electro-optically active organic diode has an anode electrode (102), a cathode electrode (162), a first electro-optically active organic layer (110) arranged between the electrodes (102, 162), and a second electro-optically active organic layer (130) arranged between said first active organic layer (110) and said cathode (162). A low electron affinity layer (120) is arranged between the first electro-optically active organic layer (110) and the second electro-optically active organic layer (130), and is formed of a first transparent inorganic semi-conductor material. A high electron affinity layer (121) is arranged between said second electro-optically active organic layer (130) and the low electron affinity layer (120), and is formed of a second transparent inorganic semiconductor material, wherein said second transparent inorganic semiconductor material has a higher electron affinity than said first inorganic semiconductor material.

Abstract: Provided is a filed-effect transistor with an organic semiconductor material showing ambipolar behaviour. Thereto, the organic semiconductor material enabling the ambipolar behaviour is a material with a small band gap.

Abstract: A stacked electro-optically active organic diode has an anode electrode (102), a cathode electrode (162), a first electro-optically active organic layer (110) arranged between the electrodes (102, 162), and a second electro-optically active organic layer (130) arranged between said first active organic layer (110) and said cathode (162). A low electron affinity layer (120) is arranged between the first electro-optically active organic layer (110) and the second electro-optically active organic layer (130), and is formed of a first transparent inorganic semi-conductor material. A high electron affinity layer (121) is arranged between said second electro-optically active organic layer (130) and the low electron affinity layer (120), and is formed of a second transparent inorganic semiconductor material, wherein said second transparent inorganic semiconductor material has a higher electron affinity than said first inorganic semiconductor material.

Abstract: An electro-optically active organic diode, for example an organic light emitting diode (OLED), comprises an anode electrode (102), a cathode electrode (122) and an electro-optically active organic layer (110) arranged in-between. A cover layer (124) is arranged in contact with a surface of the cathode layer (122) so that the cathode layer (122) is positioned between the organic layer (110) and the cover layer (124), which is formed of a substantially inert material with respect to a cathode layer (122) material in contact with said cover layer (124). The inert material is deposited on said surface of the cathode layer (122) so that the complete surface is covered and surface defects eliminated. A short protection layer (120) is further arranged between said cathode electrode (122) and said electro-optically active organic layer (110), and adjacent to said cathode electrode (122), and is formed of an inorganic semiconductor material.

Abstract: An electro-optically active organic diode has anode electrode (102), a cathode electrode (122), an electro-optically active organic layer (110) arranged between the electrodes (102, 122) and a charge carrier organic layer (116) arranged between said electro-optically active organic layer (110) and said cathode electrode layer (122), and adjacent to said electro-optically active organic layer (110). The charge carrier organic layer (116) is formed of a highly doped organic semiconductor material. A short protection layer (120) is arranged between said cathode electrode layer (122) and said charge carrier organic layer (116), and adjacent to said cathode electrode layer (122), wherein said short protection layer (120) is formed of an inorganic semiconductor material. The short protection layer prevents direct contact between the cathode layer and the charge carrier organic layer, which reduces the risk that the cathode layer will have detrimental impact on the charge carrier organic layer.

Abstract: The invention relates to an electroluminescent composition comprising an electroluminescent material containing an aryl vinylene and an additive for suppressing a drop in the initial efficiency of light emission observed when the electroluminescent material is used as such in an electroluminescent device. The invention further relates to an electroluminescent composition comprising an electroluminescent material containing an aryl vinylene and an additive, wherein the additive comprises an oligo ring structure with at least four carbonyl groups and to an electroluminescent device comprising the composition according to the invention.

Abstract: The invention pertains to a light-emitting diode (LED) comprising layers of an anode, an acidic hole conducting-injecting material, a light-emitting polymer, and a cathode, characterized in that the hole conducting-injecting material comprises a poly(3,4-ethylenedioxythiophene poly(styrenesulfonate) (PEDOT), which is obtainable by at least partially neutralizing the PEDOT with an anion that is comprised or formed from a sodium or potassium compound, and the light-emitting material comprises a light-emitting p-arylenevinylene polymer (PAV). The invention further relates to a method for increasing the efficiency of said light-emitting diode.

Abstract: Provided is a filed-effect transistor with an organic semiconductor material showing ambipolar behaviour. Thereto, the organic semiconductor material enabling the ambipolar behaviour is a material with a small band gap.

Abstract: The invention pertains to an organic light emitting diode (LED) comprising a transparent electrode, superposed by a layer of a conductive transparent polymer (CTP), superposed by a layer of a light emitting polymer, oligomer, or low molecular weight compound superposed by a metal cathode, characterized in that the CTP layer has a sulfate ion content of less than 7,500 ppm, and a metal ion content of more than 0.04 mmoles/g.

Abstract: The invention pertains to an organic light emitting diode (LED) comprising a transparent electrode, superposed by a layer of a conductive transparent polymer (CTP), superposed by a layer of a light emitting polymer, oligomer, or low molecular weight compound superposed by a metal cathode, characterized in that the CTP layer has a sulfate ion content of less than 7,500 ppm, and a metal ion content of more than 0.04 mmoles/g.