Abstract: A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.

Abstract: A method of treating the surface of a semiconductor wafer through the formation of a bonding system is provided in order to enhance the handling of the wafer during subsequent processing operations. The method generally comprises the steps of applying a release layer and an adhesive to different wafers; bonding the wafers together to form a bonded wafer system; performing at least one wafer processing operation (e.g., wafer grinding, etc.) to form a thin processed wafer; debonding the wafers; and then cleaning the surface of the processed wafer with an organic solvent that is capable of dissolving the release layer or any residue thereof. The adhesive includes a vinyl-functionalized polysiloxane oligomeric resin, a Si—H functional polysiloxane oligomeric resin, a catalyst, and optionally an inhibitor, while the release layer is comprised of either a silsesquioxane-based resin or a thermoplastic resin.

Abstract: The present invention is a method for analyzing irregular-shaped chunked silicon for low-level contaminates. The method comprises selecting a zonable-chunk of silicon and float-zoning the chunk of silicon to effect a distribution of surface contaminates into the bulk of a monocrystal of silicon. The float-zoned monocrystalline silicon is then processed into a wafer suitable for analysis for low-level contaminates.

Abstract: The present invention is a float-zone process for forming particulate silicon into monocrystalline silicon. The process employs a reusable silicon conduit having a lower end heated to form a melt zone and an upper end provided with a means for delivering a controlled amount of particulate silicon to the melt zone. A monocrystal silicon seed is used to pull a monocrystalline silicon ingot from the melt zone and particulate silicon is added to the melt zone to replenish silicon removed as monocrystalline silicon.