Abstract: The invention relates to a device for examining and/or processing an element for photolithography with a beam of charged particles, wherein the device comprises: (a) means for acquiring measurement data while the element for photolithography is exposed to the beam of charged particles; and (b) means for predetermining a drift of the beam of charged particles relative to the element for photolithography with a trained machine learning model and/or a predictive filter, wherein the trained machine learning model and/or the predictive filter use(s) at least the measurement data as input data.

Abstract: The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Abstract: The present invention relates to an apparatus for examining and/or processing a sample, said apparatus comprising: (a) a scanning particle microscope for providing a beam of charged particles, which can be directed on a surface of the sample; and (b) a scanning probe microscope with a deflectable probe; (c) wherein a detection structure is attached to the deflectable probe.

Abstract: The present application relates to an apparatus for processing a photolithographic mask, said apparatus comprising: (a) at least one time-varying particle beam, which is embodied for a local deposition reaction and/or a local etching reaction on the photolithographic mask; (b) at least one first means for providing at least one precursor gas, wherein the precursor gas is embodied to interact with the particle beam during the local deposition reaction and/or the local etching reaction; and (c) at least one second means, which reduces a mean angle of incidence (?) between the time-varying particle beam and a surface of the photolithographic mask.

Abstract: The present application relates to an apparatus for determining a position of at least one element on a photolithographic mask, said apparatus comprising: (a) at least one scanning particle microscope comprising a first reference object, wherein the first reference object is disposed on the scanning particle microscope in such a way that the scanning particle microscope can be used to determine a relative position of the at least one element on the photolithographic mask relative to the first reference object; and (b) at least one distance measuring device, which is embodied to determine a distance between the first reference object and a second reference object, wherein there is a relationship between the second reference object and the photolithographic mask.

Abstract: The present application relates to a method for disposing of excess material of a photolithographic mask, wherein the method comprises the following steps: (a) enlarging a surface of the excess material; (b) displacing the enlarged excess material on the photolithographic mask using at least one first probe of a scanning probe microscope; and (c) removing the displaced enlarged excess material from the photolithographic mask.

Abstract: The present invention relates to a method for analyzing at least one defective location of a photolithographic mask, having the following steps: (a) obtaining measurement data for the at least one defective location of the photolithographic mask; (b) determining reference data of the defective location from computer-aided design (CAD) data for the photolithographic mask; (c) correcting the reference data with at least one location-dependent correction value; and (d) analyzing the defective location by comparing the measurement data to the corrected reference data.

Abstract: The present invention relates to a beam blanker for a scanning particle microscope for blanking a charged particle beam having a beam axis, along which charged particles propagate before entering the beam blanker, wherein the beam blanker comprises: (a) at least one stop having an aperture, through which the charged particle beam can pass; (b) at least one first and one second deflection element, which are each configured to deflect the particle beam from the beam axis in a first and a second direction, respectively, upon a voltage being present; and (c) a deflection controller configured to apply a first AC voltage having a first frequency to the first deflection element and a second AC voltage having a second frequency to the second deflection element, wherein the deflection controller sets a difference frequency between the first and second AC voltages such that pulses of the charged particle beam have a predefined pulse period and during the pulse period outside the pulse duration substantially no charged

Abstract: A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

Abstract: A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

Abstract: The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) com-bining the first, the second and the third data.

Abstract: The present invention relates to a beam blanker for a scanning particle microscope for blanking a charged particle beam having a beam axis, along which charged particles propagate before entering the beam blanker, wherein the beam blanker comprises: (a) at least one stop having an aperture, through which the charged particle beam can pass; (b) at least one first and one second deflection element, which are each configured to deflect the particle beam from the beam axis in a first and a second direction, respectively, upon a voltage being present; and (c) a deflection controller configured to apply a first AC voltage having a first frequency to the first deflection element and a second AC voltage having a second frequency to the second deflection element, wherein the deflection controller sets a difference frequency between the first and second AC voltages such that pulses of the charged particle beam have a predefined pulse period and during the pulse period outside the pulse duration substantially no charged

Abstract: The invention refers to a method for analyzing a defect of an optical element for the extreme ultra-violet wavelength range comprising at least one substrate and at least one multi-layer structure, the method comprising the steps: (a) determining first data by exposing the defect to ultra-violet radiation, (b) determining second data by scanning the defect with a scanning probe microscope, (c) determining third data by scanning the defect with a scanning particle microscope, and (d) combining the first, the second and the third data.

Abstract: The present invention relates to apparatuses and methods for examining a surface of a test object, such as e.g. a lithography mask. In accordance with one aspect of the invention, an apparatus for examining a surface of a mask comprises a probe which interacts with the surface of the mask, and a measuring apparatus for establishing a reference distance of the mask from a reference point, wherein the measuring apparatus measures the reference distance of the mask in a measurement region of the mask which is not arranged on the surface of the mask.

Abstract: The invention relates to a method for automated determination of a reference point of an alignment mark on a substrate of a photolithographic mask, which method comprises the following steps: (a) performing a first line scan within a start region of the substrate in a first direction on a surface of the substrate, the alignment mark being arranged within the start region, for locating a first element of the alignment mark; (b) performing a second line scan within the start region in at least a second direction, which intersects the first direction, on the surface of the substrate for locating a second element of the alignment mark; (c) estimating the reference point of the alignment mark from the located first element and the located second element of the alignment mark; and (d) imaging a target region around the estimated reference point of the alignment mark in order to determine the reference point of the alignment mark, with the imaging being carried out at a higher resolution than the performance of the

Abstract: The present application relates to a scanning probe microscope comprising a probe arrangement for analyzing at least one defect of a photolithographic mask or of a wafer, wherein the scanning probe microscope comprises: (a) at least one first probe embodied to analyze the at least one defect; (b) means for producing at least one mark, by use of which the position of the at least one defect is indicated on the mask or on the wafer; and (c) wherein the mark is embodied in such a way that it may be detected by a scanning particle beam microscope.

Abstract: A method for examining a specimen surface with a probe of a scanning probe microscope, the specimen surface having an electrical potential distribution. The method includes (a) determining the electrical potential distribution of at least one first partial region of the specimen surface; and (b) modifying the electrical potential distribution in the at least one first partial region of the specimen surface and/or modifying an electrical potential of the probe of the scanning probe microscope before scanning at least one second partial region of the specimen surface.

Abstract: The present invention relates to apparatuses and methods for examining a surface of a test object, such as e.g. a lithography mask. In accordance with one aspect of the invention, an apparatus for examining a surface of a mask comprises a probe which interacts with the surface of the mask, and a measuring apparatus for establishing a reference distance of the mask from a reference point, wherein the measuring apparatus measures the reference distance of the mask in a measurement region of the mask which is not arranged on the surface of the mask.

Abstract: The invention relates to a method for determining a performance of a photolithographic mask at an exposure wavelength with the steps of scanning at least one electron beam across at least one portion of the photolithographic mask, measuring signals generated by the at least one electron beam interacting with the at least one portion of the photolithographic mask, and determining the performance of the at least one portion of the photolithographic mask at the exposure wavelength based on the measured signals.

Abstract: The invention relates to a method for automated determination of a reference point of an alignment mark on a substrate of a photolithographic mask, which method comprises the following steps: (a) performing a first line scan within a start region of the substrate in a first direction on a surface of the substrate, the alignment mark being arranged within the start region, for locating a first element of the alignment mark; (b) performing a second line scan within the start region in at least a second direction, which intersects the first direction, on the surface of the substrate for locating a second element of the alignment mark; (c) estimating the reference point of the alignment mark from the located first element and the located second element of the alignment mark; and (d) imaging a target region around the estimated reference point of the alignment mark in order to determine the reference point of the alignment mark, with the imaging being carried out at a higher resolution than the performance of the