Patents by Inventor Michael C. Maher

Michael C. Maher has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Integrated circuit having increased radiation hardness and reliability
    Patent number: 7948065
    Abstract: A system and method is disclosed for providing an integrated circuit that has increased radiation hardness and reliability. A device active area of an integrated circuit is provided and a layer of radiation resistant material is applied to the device active area of the integrated circuit. In one advantageous embodiment the radiation resistant material is silicon carbide. In another advantageous embodiment a passivation layer is placed between the device active area and the layer of radiation resistant material. The integrated circuit of the present invention exhibits minimal sensitivity to (1) enhanced low dose rate sensitivity (ELDRS) effects of radiation, and (2) pre-irradiation elevated temperature stress (PETS) effects of radiation.
    Type: Grant
    Filed: November 9, 2009
    Date of Patent: May 24, 2011
    Assignee: National Semiconductor Corporation
    Inventor: Michael C. Maher
  • Method for manufacturing an integrated circuit having increased radiation hardness and reliability
    Patent number: 7629196
    Abstract: A method is disclosed for manufacturing an integrated circuit that has increased radiation hardness and reliability. A device active area of an integrated circuit is provided and a layer of radiation resistant material is applied to the device active area of the integrated circuit. In one advantageous embodiment the radiation resistant material is silicon carbide. In another advantageous embodiment a passivation layer is placed between the device active area and the layer of radiation resistant material. The integrated circuit of the present invention exhibits minimal sensitivity to (1) enhanced low dose rate sensitivity (ELDRS) effects of radiation, and (2) pre-irradiation elevated temperature stress (PETS) effects of radiation.
    Type: Grant
    Filed: October 15, 2007
    Date of Patent: December 8, 2009
    Assignee: National Semiconductor Corporation
    Inventor: Michael C. Maher
  • System and method for providing an integrated circuit having increased radiation hardness and reliability
    Patent number: 7329620
    Abstract: A system and method is disclosed for providing an integrated circuit that has increased radiation hardness and reliability. A device active area of an integrated circuit is provided and a layer of radiation resistant material is applied to the device active area of the integrated circuit. In one advantageous embodiment the radiation resistant material is silicon carbide. In another advantageous embodiment a passivation layer is placed between the device active area and the layer of radiation resistant material. The integrated circuit of the present invention exhibits minimal sensitivity to (1) enhanced low dose rate sensitivity (ELDRS) effects of radiation, and (2) pre-irradiation elevated temperature stress (PETS) effects of radiation.
    Type: Grant
    Filed: October 8, 2004
    Date of Patent: February 12, 2008
    Assignee: National Semiconductor Corporation
    Inventor: Michael C. Maher