Patents by Inventor Michael Carl Drymon

Michael Carl Drymon has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Self limiting lateral atomic layer etch
    Patent number: 10714354
    Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.
    Type: Grant
    Filed: March 1, 2017
    Date of Patent: July 14, 2020
    Assignee: Lam Research Corporation
    Inventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon
  • SELF LIMITING LATERAL ATOMIC LAYER ETCH
    Publication number: 20170178917
    Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.
    Type: Application
    Filed: March 1, 2017
    Publication date: June 22, 2017
    Applicant: Lam Research Corporation
    Inventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon
  • Self limiting lateral atomic layer etch
    Patent number: 9620376
    Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.
    Type: Grant
    Filed: August 19, 2015
    Date of Patent: April 11, 2017
    Assignee: LAM RESEARCH CORPORATION
    Inventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon
  • SELF LIMITING LATERAL ATOMIC LAYER ETCH
    Publication number: 20170053808
    Abstract: Methods of and apparatuses for laterally etching semiconductor substrates using an atomic layer etch process involving exposing an oxidized surface of a semiconductor substrate to a fluorine-containing etch gas and heating the substrate to remove non-volatile etch byproducts by a sublimation mechanism are provided herein. Methods also including additionally pulsing a hydrogen-containing gas when pulsing the fluorine-containing etch gas. Apparatuses also include an ammonia mixing manifold suitable for separately preparing and mixing ammonia for use in various tools.
    Type: Application
    Filed: August 19, 2015
    Publication date: February 23, 2017
    Inventors: Tom Kamp, Neema Rastgar, Michael Carl Drymon