Abstract: Disclosed herein are systems, methods, and devices processing feed material utilizing a microwave plasma apparatus comprising a powder ingress preventor (PIP). In some embodiments, the microwave plasma apparatus comprises a core plasma tube and a liner; and a ring structure comprising: a bearing surface, the bearing surface contacting an interior diameter of the core plasma tube; and an opening, the opening contacting an outer diameter of the liner.

Abstract: VLSI I/O structures to reduce the effects of simultaneous switching noise (SSN) on output driver circuits and enhance electrostatic discharge immunity, while reducing chip area, in both input receiver circuits and output driver circuits include improved transistors having deep-junction drain and a multi-cascaded, resistive deep-junction source structure.

Abstract: Field-effect transistors are formed on a substrate having silicided elements including diffusion (source and drain) regions and polysilicon gates. The silicided surfaces of these elements have low ohmic resistance and are used to provide interconnection between contacts that are spaced from each other, thereby freeing routing areas for other interconnections. The diffusion regions of adjacent transistors have edges that face each other, and are formed with indentations which constitute portions of a substrate tap area. The low ohmic resistance of the silicided surfaces of the diffusion regions enables the substrate tap area to be cut out of the diffusion regions without degrading the electrical performance of the transistors, thereby providing a substantial reduction in the space required for the transistors on the substrate.

Abstract: A method and resulting structure is disclosed for extending or enlarging the effective volumes of one or more source, drain, and/or emitter regions of integrated circuit structures such as an SCR structure and/or an MOS structure designed to protect an integrated circuit structure from damage due to electrostatic discharge (ESD). The additional effective volume allows the SCR and/or MOS protection devices to handle additional energy from an electrostatic discharge applied, for example, to I/O contacts electrically connected to the SCR protection structure. The additional effective volume is obtained, without additional doping or masking steps, by forming individual deep doped regions or wells, beneath one or more heavily doped source, drain, and emitter regions, at the same time and to the same depth and doping concentration as conventional main P wells and/or N wells which are simultaneously formed in the substrate, whereby no additional masks and implanting steps are needed.

Abstract: An integrated circuit includes a plurality of signal lines, a plurality of pull transistors connected between the signal lines respectively and an electrical potential, and an IDDQ test control for turning on the pull transistors for normal operation, and for turning off the pull transistors for IDDQ testing. The IDDQ test control includes a test signal generator for generating an IDDQ test control signal that turns off the pull transistors, and an IDDQ test signal line that is connected to the test signal generator and to the pull transistors. The pull transistors are designed within a periphery of the circuit, and the IDDQ test signal line forms a ring. The test signal generator includes an external pin, a special buffer, or a boundary scan system including a chain of boundary scan cells and a test access port controller. The test control signal can be generated by one of the boundary scan cells, or by the test access port controller.

Abstract: An integrated circuit includes a plurality of signal lines, a plurality of pull transistors connected between the signal lines respectively and an electrical potential, and an IDDQ test control for turning on the pull transistors for normal operation, and for turning off the pull transistors for IDDQ testing. The IDDQ test control includes a test signal generator for generating an IDDQ test control signal that turns off the pull transistors, and an IDDQ test signal line that is connected to the test signal generator and to the pull transistors. The pull transistors are designed within a periphery of the circuit, and the IDDQ test signal line forms a ring. The test signal generator includes an external pin, a special buffer, or a boundary scan system including a chain of boundary scan cells and a test access port controller. The test control signal can be generated by one of the boundary scan cells, or by the test access port controller.