Patents by Inventor Michael David Bice

Michael David Bice has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Silicon-based dielectric tunneling emitter
    Publication number: 20040140748
    Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
    Type: Application
    Filed: January 12, 2004
    Publication date: July 22, 2004
    Inventors: Zhizhang Chen, Michael David Bice, Ronald L. Enck, Michael J. Regan, Thomas Novet, Paul J. Benning
  • Silicon-based dielectric tunneling emitter
    Patent number: 6753544
    Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
    Type: Grant
    Filed: April 30, 2001
    Date of Patent: June 22, 2004
    Assignee: Hewlett-Packard Development Company, L.P.
    Inventors: Zhizhang Chen, Michael David Bice, Ronald L. Enck, Michael J. Regan, Thomas Novet, Paul J. Benning
  • Silicon-based dielectric tunneling emitter
    Publication number: 20020167021
    Abstract: An emitter has an electron supply layer and a silicon-based dielectric layer formed on the electron supply layer. The silicon-based dielectric layer is preferably less than about 500 Angstroms. Optionally, an insulator layer is formed on the electron supply layer and has openings defined within in which the silicon-based dielectric layer is formed. A cathode layer is formed on the silicon-based dielectric layer to provide a surface for energy emissions of electrons and/or photons. Preferably, the emitter is subjected to an annealing process thereby increasing the supply of electrons tunneled from the electron supply layer to the cathode layer.
    Type: Application
    Filed: April 30, 2001
    Publication date: November 14, 2002
    Inventors: Zhizang Chen, Michael David Bice, Ronald L. Enck, Mechael J. Regan, Thomas Novet, Paul J. Benning