Abstract: A system and method for reducing power consumption within clock distribution on a semiconductor chip. A 4-phase clock generator within a clock distribution network provides 4 non-overlapping clock signals dependent upon a received input clock. A reduced voltage swing clock generator receives the non-overlapping clock signals and charges and discharges a second set of clock lines in a manner sequenced by the non-overlapping clock signals. The sequencing prevents a voltage range from reaching a magnitude equal to a power supply voltage for each of the second set of clock lines. In one embodiment, the magnitude reaches half of the power supply voltage. The reduced voltage swing latch receives the second set of clock lines. The reduced voltage swing latch updates and maintains logical state based at least upon the received second set of clock lines.

Abstract: A scannable pulse dynamic logic gate may include an evaluation network that evaluates dynamic inputs in response to assertion of an evaluate pulse. The evaluate pulse may be generated from a clock signal such that it is shorter in duration than the clock signal. During a normal mode of operation, when the evaluate pulse is asserted, the evaluation network may discharge a dynamic node depending on the state of the dynamic inputs. The resultant state of the dynamic node may be stored within an output storage element. When the evaluate pulse is deasserted, the dynamic node may be precharged. During a scan mode of operation, the dynamic node may remain precharged. Scan data may be transferred to the output storage element under the control of scan-related control signals.

Abstract: A scannable pulse dynamic logic gate may include an evaluation network that evaluates dynamic inputs in response to assertion of an evaluate pulse. The evaluate pulse may be generated from a clock signal such that it is shorter in duration than the clock signal. During a normal mode of operation, when the evaluate pulse is asserted, the evaluation network may discharge a dynamic node depending on the state of the dynamic inputs. The dynamic node may then drive output device(s). When the evaluate pulse is deasserted, the dynamic node may be precharged. The gate may also include scan input devices, which, during a scan mode of operation, may load scan input data onto the output node in response to assertion of a scan master clock. A storage element of the gate may receive and capture a value of the output node in response to assertion of a slave scan clock.

Abstract: A display controller 104 for use with a display device 107 operable to display images on a screen. Display controller 104 includes circuitry 201-210 for presenting first data to the display device 107 for generating an image in a first areas of the screen, the first data being retrieved from an external frame buffer 108. A display controller 104 further includes circuitry 205, 210 for presenting second data to the display device 107 for generating an image in the second area of the screen, the second data being retrieved from an internal frame buffer 206.

Abstract: A memory system 104 includes an array 200 of memory cells arranged in rows and columns. Circuitry 208 is included for selectively performing logic operations on a bit of data stored in a selected cell using a bit of received modifying data and mode data bit for selecting a logic operation for performance. Circuitry 208 for performing logic operations is operable during an AND logic operation to write data into the cell when the bit of modifying data is a logic zero and maintaining an existing bit stored in the cell when the bit of modifying data is a logic one. Also included is circuitry 207, 210 for receiving and latching the mode data bit and the modifying data through a single port.

Abstract: A memory system 104 includes an array 200 of memory calls arranged in rows and columns and circuitry 208 for selectively performing logic operations on a bit of data stored in a selected call using a bit of received modifying data and a mode data bit for selecting a logic operation for performance. Circuitry 208 for modifying during an OR logic operation writing bit of the modifying data into the cell when the bit of modifying data is a logic one and maintaining an existing bit stored in call when the bit of modifying data is a logic zero. Memory system 104 further includes circuitry 207, 210 for receiving and latching the mode data and the modifying data through a single port.

Abstract: Sensing circuitry including a sense amplifier 400 for latching a bit of data on a true bit line and a complementary bit of data on a complementary bit line. Circuitry 403, 404, 405 is included for performing boolean operations on bit of data latched in sense amplifier 400 in response to a bit of modifying data. Circuitry 403, 404, 405 during an AND operation pulls down the true bit line when the bit of modifying data a logic 0.

Abstract: A memory 600 including an array of memory cells 201 and a plurality of input/output terminals 220 for receiving control bits during control cycles and accessing selected ones of the cells 201 during data access cycles. A command bit input terminal 221 is provided for receiving command bits for initiating the control cycles and a mapping input terminal 222 is provided for receiving a mapping enable signal to initiate a mapping mode. Circuitry 215/ 216 is provided for decoding control bits received during at least one control cycle occurring during a mapping mode for allowing a mapping of a set of addresses for accessing the cells of the array 201.

Abstract: A memory including a plurality of input/output terminals 220 for exchanging data bits during a data access cycle and receiving command and control bits during a command and control cycle. The memory further includes an array of memory cells 201, a data input/output circuitry for transferring data between the input/output terminals and the array of memory cells during the data access cycle, and control circuitry for controlling operations of the memory in response to command and control bits received at the input/output terminals during the command and control cycle.

Abstract: A memory system 104 is provided which includes an array 200 of memory cells arranged in rows and columns. Circuitry 207, 208, 209, 210 is also provided for selectively performing logic operations on a bit of data stored in a selected memory cell using a bit of received modifying data. Circuitry 207, 208, 209, 210 for performing logic operations is operable during an AND operation to write the bit of modifying data into the selected memory cell when the bit of modifying data is a logic zero and maintains an existing bit stored in the selected cell when the bit of modifying data is a logic one.

Abstract: Circuitry 200 is provided for transmitting data between a first endpoint and a second endpoint and includes an information line 201 and a dummy line 205. Information transmission circuitry 202, 203, 204 is disposed at the first endpoint for transmitting information on information line 201, transmission circuitry 202, 203, 204 pulling information line 201 to a low voltage during transmission of information of a first logic state and charging information line 201 to a higher voltage during transmission of information of a second logic state. Charging circuitry 206, 207, 208 is disposed at the first endpoint for charging dummy line 205 to a reference voltage during transmission of information on information line 201, charging circuitry 206, 207, 208 charging dummy line 205 at a rate different from a rate at which transmission circuitry 202, 203, 204 charges information line 201 during transmission of information of the second logic state.

Abstract: Substrate bias control circuitry 100 is provided which includes a bias sensor 101 for measuring a bias voltage of a substrate and generating a control signal and response. A master oscillator 102 is provided for generating a first driving signal, a frequency of the first driving signal adjusted by the control signal generated by the bias sensor 101. A first charge pump 103 is provided for pumping electrons into a substrate in response to the first driving signal. A slave oscillator generates a second driving signal, a frequency of the second driving signal is determined from the frequency of the first driving signal using a phase-locked loop. A second charge pump 105 is provided for pumping electrons into the substrate in response to the second driving signal.

Abstract: Circuitry 200 is provided for transferring data across a conductive line 201. A driver 202 is provided for transmitting data across the line 201, the driver 202 receiving data at a first high voltage level and a low voltage level and driving the line 201 at the low voltage level and a second high voltage level, the second high voltage level being less than the first high voltage level. A receiver 206 is provided for receiving data transmitted on line 201 by driver 202. The receiver includes a differential amplifier 207-210 having a first input coupled to line 201 and a second input coupled to a voltage source providing a reference voltage V.sub.ref. Receiver 206 further includes a current source transistor 212 for coupling a common node 213 of the differential amplifier to a source providing a voltage at the first high voltage level, the differential amplifier outputting data at said low voltage level and said first high voltage level.

Abstract: Systems and methods for testing ASIC and RAM memory devices are disclosed. The method comprises determining a signature map of valid power supply current values for a known good microcircuit wherein each valid power supply current value is measured at a fixed level of power supply voltage and corresponds to a unique test input stimuli pattern applied to the known good microcircuit. The signature map of power supply current values is stored in an electronic memory (300). The test input stimuli patterns are then applied to an unproven microcircuit (330) and the power supply current of the unproven microcircuit is forced to the levels stored in the signature map by a current supply (360) while the voltages across the power supply inputs of the unproven microcircuit are measured by a voltmeter (340). The measured power supply voltages for each power supply current value are then compared to the fixed voltage supply level used to test the known good microcircuit.

Abstract: A line driver 202 is provided for transmitting signals across a line 201. Line driver 202 receives an input signal having a first voltage swing between a first high voltage level and a first low voltage level. Line driver 202 reduces power dissipation in line 201 by transmitting an output signal on line 201 having a second voltage swing between a second low voltage level greater than the first low voltage level and a second high voltage level less than the first high voltage level.

Abstract: A memory circuit 300 is provided which includes first and second banks 201a and 201b of memory cells arranged in rows and columns. Row decoder circuitry 210 is provided for selecting a row in at least one of the banks in response to row address. Row address circuitry 208, 209 is included for providing a sequence of row addresses to the row decoder circuitry in response to a single row address received at an address port to memory circuitry 300. Column decoder circuitry 213 is provided for selecting columns in each of the banks 201 in response to a column address. Column address circuitry 211, 212 is provided for presenting a sequence of column addresses to the column decoder circuitry in response to a single column address received at the address port.

Abstract: Data transmission circuitry 200 is disclosed which includes a transmission line 201, driver circuitry 202, and receiver circuitry 206. Driver circuitry 202 is coupled to transmission line 201 and sets transmission line 201 to a low transmission voltage level during transmission of information of a first logic state and sets transmission line 201 to a higher transmission voltage during transmission of information of a second logic state. Receiver circuitry 206 compares the voltage on transmission line 201 with a static reference voltage which is a predetermined fraction of the higher transmission voltage and in response latches an output to a corresponding logic state. Receiver circuitry 206 latches the output in an output high logic state to an output voltage which is a multiple of the higher transmission voltage.

Abstract: Memory circuitry 200 is provided which includes first and second banks of memory cells 201a, 201b arranged in rows and columns. Row decoder circuitry 210 is included for selecting a row in at least one of the memory banks 201 in response to a row address. Row address circuitry 208, 209, 215 is provided for presenting a sequence of the row addresses to the row decoder circuitry 210 in response to a single row address provided at an address port to memory circuitry 200. Column decoder circuitry 213 is further included for selecting a column in each of the banks 201 in response to a column address. Column address circuitry 211, 212, 215 presents a sequence of the column addresses to the column decoder circuitry 213 in response to a single column address received at the address port to memory circuitry 200.

Abstract: A memory 200 is provided which includes an array 201 of volatile memory cells 202. Addressing circuitry 205, 213 is included for providing access to selected ones of the memory cells 202. Master read/write circuitry 208 is included for reading and writing data into the selected memory cells 202. First slave circuitry 210, 211 is provided for storing data for exchange with the master read/write circuitry 208. Second slave circuitry 210/211 is also provided for storing data for exchange with the master read/write circuitry 208. Control circuitry 206, 214, 215 controls the exchanges of data between the master read/write circuitry 208 and the first and second slave circuitry 210, 211.

Abstract: A digital voltage shifter 101 is provided which includes an input buffer 200 having an input for receiving data logic high signals at a first voltage, a true output and a complementary output. A static random access memory cell 220 is also included which operates in response to a voltage supply providing a second voltage differing from the first voltage and having a first input coupled to the true output of the input buffer and a second input coupled to the complementary output of the input buffer. An output driver 230 is further included which operates in response to the second supply voltage and is coupled to an output of the memory cell, the output driver outputting the received logic signals at the second voltage.