Abstract: A center region of conductive material/s may be disposed or “sandwiched” between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.

Abstract: A center region of conductive material/s may be disposed or “sandwiched” between transition regions of relatively lower conductivity materials to provide substantially low defect density interfaces for the sandwiched material. The center region and surrounding transition regions may in turn be disposed or sandwiched between dielectric insulative material to form a sandwiched and transitioned device structure. The center region of such a sandwiched structure may be implemented, for example, as a device layer such as conductive microbolometer layer for a microbolometer detector structure.

Abstract: Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

Abstract: Microbolometer infrared detector elements that may be formed and implemented by varying type/s of precursors used to form amorphous silicon-based microbolometer membrane material/s and/or by varying composition of the final amorphous silicon-based microbolometer membrane material/s (e.g., by adjusting alloy composition) to vary the material properties such as activation energy and carrier mobility. The amorphous silicon-based microbolometer membrane material/s materials may include varying amounts of one or more additional and optional materials, including hydrogen, fluorine, germanium, n-type dopants and p-type dopants.

Abstract: A clutch basket is provided having an upper side with upstanding fingers. The fingers include opposing side edges that are engaged by tabs that extend from the periphery of a clutch drive disc. Each finger is provided with a wear resistant shield structure that overlies at least portions of the side edges that are contacted by the tabs. The basket underside includes shock absorbing springs fitted in pockets which are lined with wear-resistant inserts.

Abstract: A semiconductor-based, photo detector device capable of simultaneously detecting two or more selected wavelengths of light on a pixel-registered basis. The device has detector layers of selected semiconductor materials of one micron or less in thickness interspersed with contact layers, each detector layer having a different light absorption to wavelength response curve. All contact layers, including detector bias voltages, have electrical contacts on the backside of the pixel for discrete pixel connection to mating connections on a suitable ROIC substrate. Among its several embodiments, there is a multi-color detector array and a single channel per pixel differential optical signal detector.

Abstract: A modular power supply architecture for automatic test equipment is disclosed. The power supply architecture includes a control module having a control signal output line and a plurality of output modules. The control module includes control circuitry to generate a control signal along the control signal output line and measurement circuitry coupled to the control signal output line. The output modules have respective control inputs coupled in parallel to the control signal output line to receive the control signal and respective current outputs connected in parallel. The output modules are operative in response to the control signal to generate respective currents at the current outputs. A current output bus receives and sums the respective current outputs, the output bus being isolated from the control signal line.

Abstract: A modular power supply architecture for automatic test equipment is disclosed. The power supply architecture includes a control module having a control signal output line and a plurality of output modules. The control module includes control circuitry to generate a control signal along the control signal output line and measurement circuitry coupled to the control signal output line. The output modules have respective control inputs coupled in parallel to the control signal output line to receive the control signal and respective current outputs connected in parallel. The output modules are operative in response to the control signal to generate respective currents at the current outputs. A current output bus receives and sums the respective current outputs, the output bus being isolated from the control signal line.

Abstract: A power supply is disclosed for use with a device-under-test disposed on a device board. The power supply includes a high-accuracy remote supply circuit including respective force and sense lines and a high-speed local supply circuit. The local supply circuit includes an active boost circuit having respective boost and sense lines coupled to the force and sense lines. The active boost circuit is operative to selectively cooperate with the remote supply circuit and, when the device-under-test demands a large dynamic current, provide the dynamic current until the remote supply circuit responds to the current demand.

Abstract: A high-accuracy linear amplifier is disclosed for sinking or sourcing current to or from a load. The linear amplifier includes input circuitry for receiving a predetermined input signal and rectifier circuitry. The rectifier circuitry is disposed at the output of the input circuitry and is operative in response to the input signal to generate a source/sink command signal. Output stage circuitry is coupled to the rectifier circuitry and includes a current sink transistor and a current source transistor. The output stage circuitry is responsive to the command signal to sink or source current through one of the respective transistors. The amplifier further includes feedback circuitry coupled between the output of the output stage circuitry and the input circuitry to provide an error signal for modifying the input signal. Bias circuitry maintains the non-conducting transistor in an on state during the sourcing or sinking of current.

Abstract: A high-accuracy linear amplifier is disclosed for sinking or sourcing current to or from a load. The linear amplifier includes input circuitry for receiving a predetermined input signal and rectifier circuitry. The rectifier circuitry is disposed at the output of the input circuitry and is operative in response to the input signal to generate a source/sink command signal. Output stage circuitry is coupled to the rectifier circuitry and includes a current sink transistor and a current source transistor. The output stage circuitry is responsive to the command signal to sink or source current through one of the respective transistors. The amplifier further includes feedback circuitry coupled between the output of the output stage circuitry and the input circuitry to provide an error signal for modifying the input signal. Bias circuitry maintains the non-conducting transistor in an on state during the sourcing or sinking of current.

Abstract: A semiconductor-based, photo detector device capable of simultaneously detecting two or more selected wavelengths of light on a pixel-registered basis. The device has detector layers of selected semiconductor materials of one micron or less in thickness interspersed with contact layers, each detector layer having a different light absorption to wavelength response curve. All contact layers, including detector bias voltages, have electrical contacts on the backside of the pixel for discrete pixel connection to mating connections on a suitable ROIC substrate. Among its several embodiments, there is a multi-color detector array and a single channel per pixel differential optical signal detector.