Patents by Inventor Michael Flatte

Michael Flatte has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9865660
    Abstract: An optoelectronic device which can read magnetically stored information, and convert it into optical light signals using organic or “plastic” semiconductors is described. Such a device may use OLEDs, and may be termed an “organic magneto-optic transducer” (OMOT). An OMOT device can read magnetically stored information, and convert it into optical light signals. The OMOT may provide benefits such as non-volatile storage, flexible films, reduced cost, and operation at room temperature.
    Type: Grant
    Filed: August 25, 2015
    Date of Patent: January 9, 2018
    Assignee: University of Iowa Research Foundation
    Inventors: Markus Wohlgenannt, Michael Flatte, Andrew Kent, Fujian Wang, Nicholas Harmon, Ferran Macia Bros
  • Patent number: 9806710
    Abstract: A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.
    Type: Grant
    Filed: March 31, 2016
    Date of Patent: October 31, 2017
    Assignee: UNIVERSITY OF IOWA RESEARCH FOUNDATION
    Inventor: Michael Flatté
  • Publication number: 20170288666
    Abstract: A voltage-controlled magnetic based device is described that includes a magnetic insulator; a topological insulator adjacent the magnetic insulator; and magnetic dopants within the topological insulator. The magnetic dopants are located within an edge region of the topological insulator to inhibit charge current flow in the topological insulator during a switching operation using an applied electric field generating by applying a switching voltage across two electrodes at opposite sides of the topological insulator. Power dissipation due to carrier-based currents can be avoided or at least minimized by the magnetic dopants at the edges of the topological insulator.
    Type: Application
    Filed: March 31, 2016
    Publication date: October 5, 2017
    Inventor: Michael Flatté
  • Publication number: 20160197133
    Abstract: An optoelectronic device which can read magnetically stored information, and convert it into optical light signals using organic or “plastic” semiconductors is described. Such a device may use OLEDs, and may be termed an “organic magneto-optic transducer” (OMOT). An OMOT device can read magnetically stored information, and convert it into optical light signals. The OMOT may provide benefits such as non-volatile storage, flexible films, reduced cost, and operation at room temperature.
    Type: Application
    Filed: August 25, 2015
    Publication date: July 7, 2016
    Inventors: MARKUS WOHLGENANNT, Michael Flatte, Andrew Kent, Fujian Wang, Nicholas Harmon, Ferran Macia Bros
  • Publication number: 20050263751
    Abstract: A nonmagnetic semiconductor device which may be utilized as a spin resonant tunnel diode (spin RTD) and spin transistor, in which low applied voltages and/or magnetic fields are used to control the characteristics of spin-polarized current flow. The nonmagnetic semiconductor device exploits the properties of bulk inversion asymmetry (BIA) in (110)-oriented quantum wells. The nonmagnetic semiconductor device may also be used as a nonmagnetic semiconductor spin valve and a magnetic field sensor. The spin transistor and spin valve may be applied to low-power and/or high-density and/or high-speed logic technologies. The magnetic field sensor may be applied to high-speed hard disk read heads. The spin RTD of the present invention would be useful for a plurality of semiconductor spintronic devices for spin injection and/or spin detection.
    Type: Application
    Filed: February 28, 2005
    Publication date: December 1, 2005
    Inventors: Kimberley Hall, Wayne Lau, Kenan Gundogdu, Michael Flatte, Thomas Boggess