Abstract: The present invention relates to novel photoresist compositions and processes for preparing the same utilizing polymers having a low polydispersity via the use of certain chain transfer agents (CTA) with certain monomers to provide said polymers. The polymers incorporating the chain transfer agents can be homopolymers, or made with additional monomers to provide copolymers. These polymers/copolymers are then converted into photoresist compositions for use as such.

Abstract: This invention provides a method for removing certain sulfur-containing groups from polymers, especially those made via RAFT polymerization processes.

Abstract: The invention pertains to low polydispersity acrylic polymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity polymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Abstract: The present invention relates to novel unsaturated polycyclic compounds containing two fluoroalcohol substitutents. This invention also relates to homopolymers and copolymers derived from such unsaturated polycyclic compounds. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Abstract: The invention pertains to low polydispersity copolymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity copolymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Abstract: This invention provides a method for removing certain sulfur-containing groups from polymers, especially those made via RAFT polymerization processes.

Abstract: The present invention relates to novel unsaturated polycyclic compounds containing two fluoroalcohol substitutents. This invention also relates to homopolymers and copolymers derived from such unsaturated polycyclic compounds. The copolymers are useful for photoimaging compositions and, in particular, photoresist compositions (positive-working and/or negative-working) for imaging in the production of semiconductor devices. The polymers are especially useful in photoresist compositions having high UV transparency (particularly at short wavelengths, e.g., 157 nm) which are useful as base resins in resists and potentially in many other applications.

Abstract: Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.

Abstract: The present invention relates to novel photoresist compositions and processes for preparing the same utilizing polymers having a low polydispersity via the use of certain chain transfer agents (CTA) with certain monomers to provide said polymers. The polymers incorporating the chain transfer agents can be homopolymers, or made with additional monomers to provide copolymers. These polymers/copolymers are then converted into photoresist compositions for use as such.

Abstract: The present invention is generally directed to a polymeric metal complex comprising a polymeric material having a plurality of a first-type functional groups, wherein at least a portion of the functional groups are coordinated to at least one metal containing complex, polymeric-metal complex salts comprising at least one polymeric material having a plurality of first-type functional groups having a charge, and at least one metal complex having an opposite charge. It further relates to devices that are made with the polymeric metal complex or the polymeric-metal complex salt.

Abstract: Nitrile/vinyl ether-containing polymers for photoresist compositions and microlithography methods employing the photoresist compositions are described. These photoresist compositions comprise 1) at least one ethylenically unsaturated compound comprised of a vinyl ether and 2) a nitrile-containing compound, e.g., acrylonitrile, which together impart high ultraviolet (UV) transparency and developability in basic media. In some embodiments, these photoresist compositions further comprise a fluoroalcohol group. The photoresist compositions of this invention have, high UV transparency, particularly at short wavelengths, e.g., 157 nm and 193 nm, which property makes them useful for lithography at these short wavelengths.

Abstract: The present invention is generally directed to a polymeric metal complex comprising a polymeric material having a plurality of a first-type functional groups, wherein at least a portion of the functional groups are coordinated to at least one metal containing complex, polymeric-metal complex salts comprising at least one polymeric material having a plurality of first-type functional groups having a charge, and at least one metal complex having an opposite charge. It further relates to devices that are made with the polymeric metal complex or the polymeric-metal complex salt.

Abstract: The invention pertains to low polydispersity acrylic polymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity polymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Abstract: The invention pertains to low polydispersity copolymers useful for photoimaging and photoresist compositions, and to the photoimaging processes which use these compositions. The low polydispersity copolymers of this invention are prepared using controlled radical polymerization (CRP) techniques, such as RAFT (reversible addition fragmentation chain transfer) polymerization.

Abstract: Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched copolymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.

Abstract: A flexible, aqueous processible, photoimagable coverlay compositions, having advantageous adhesion and release properties and resistance to (unwanted) haloing. The coverlay compositions of the present invention comprise an acrylic, low Tg, graft copolymer binder component, having an alkali resistant backbone-segment and a pendant arm segment comprising hydrophilic moieties. Optionally, the coverlay further comprises a thiophene-type adhesion promoter to further improve adhesion properties.

Abstract: The present invention is generally directed to a polymeric metal complex comprising a polymeric material having a plurality of a first-type functional groups, wherein at least a portion of the functional groups are coordinated to at least one metal containing complex, polymeric-metal complex salts comprising at least one polymeric material having a plurality of first-type functional groups having a charge, and at least one metal complex having an opposite charge. It further relates to devices that are made with the polymeric metal complex or the polymeric-metal complex salt.

Abstract: Positive photoresists and associated processes for microlithography in the ultraviolet (UV) and violet are disclosed. The photoresists comprise (a) a branched polymer containing protected acid groups and (b) at least one photoacid generator. The photoresists have high transparency throughout the UV, good development properties, high plasma etch resistance and other desirable properties, and are useful for microlithography in the near, far, and extreme UV, particularly at wavelengths less than or equal to 365 nm.

Abstract: The present invention provides novel photoresist compositions and processes for preparing the same utilizing low polydispersity (co)polymers prepared via the polymerization of selected monomers in the presence of RAFT chain transfer agents. The polymers can be homopolymers of substituted styrenes, or can be copolymers comprising additional monomers. These (co)polymers can be converted into photoresist compositions for use as such.

Abstract: An anhydrous, liquid phase process for preparing polymers of enhanced purity and low polydispersity comprising the steps of polymerization, purification, transesterification, purification, catalyst removal, and solvent exchange. The resultant polymer in solution can be used directly, without further processing steps, to prepare a photoresist composition.