Abstract: A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate containing host circuits. Electrical interconnects are provided between and among the electronic components in the dielectric layers and the host circuits. The layers containing the components may also be provided by growing the electronic devices on a growth substrate. The growth substrate is then removed after the layer is attached to the host substrate.

Abstract: A bipolar transistor-based linearizer with programmable gain and phase response apparatus uses a splitter to separate an incoming RF signal into two equal components: in-phase (I) and quadrature (Q, ninety degrees delayed). The I signal then passes through a first bipolar variable gain amplifier (VGA) while the Q signal passes through a second bipolar VGA. After passing through the first and second VGAs, the amplified signals are combined at the output using a summer to produce a predistorted signal that drives a TWTA. The gains of each VGA are controlled using an RF power detector in conjunction with a bipolar gain/phase slope controller. Each gain can be adjusted separately to product a large range of linearization characteristics.

Abstract: A method for assembling an electronic system with a plurality of layers. Recesses in formed in one or more dielectric layers and electronic components are positioned within the recesses. One or more layers containing the components are placed on a host substrate containing host circuits. Electrical interconnects are provided between and among the electronic components in the dielectric layers and the host circuits. The layers containing the components may also be provided by growing the electronic devices on a growth substrate. The growth substrate is then removed after the layer is attached to the host substrate.

Abstract: A bipolar transistor-based linearizer with programmable gain and phase response apparatus uses a splitter to separate an incoming RF signal into two equal components: in-phase (I) and quadrature (Q, ninety degrees delayed). The I signal then passes through a first bipolar variable gain amplifier (VGA) while the Q signal passes through a second bipolar VGA. After passing through the first and second VGAs, the amplified signals are combined at the output using a summer to produce a predistorted signal that drives a TWTA. The gains of each VGA are controlled using an RF power detector in conjunction with a bipolar gain/phase slope controller. Each gain can be adjusted separately to product a large range of linearization characteristics.

Abstract: A method to design and fabricate circuits is disclosed which will permit such circuits to operate at higher frequencies. The method is particularly adapted to integrated digital circuits, and to differential sections of such circuits, but may be applied more broadly. A load on the output of an amplifying section of the circuit is designed employing a section of high impedance inductive transmission line nearest the output node, which is then connected to a section of low impedance capacitive transmission line, and then is terminated into a resistor which provides the 0 Hz load for the circuit. By reducing the effect of the resistor portion of the load, the capacitive transmission line section permits the entire load, as seen at the output of the amplifying section, to appear more ideally inductive than has previously been achieved. Due to this inductive appearance, response times are improved and the circuit is able to operate at significantly higher frequencies.

Abstract: A differential nonlinear transmission line (NLTL) circuit has anti-parallel diode pairs along a balanced transmission line to generate well defined high-speed pulses with sharp positive and negative transitions from a time varying input signal. The input signal may carry an arbitrary DC bias voltage component that is suitable for digital logic circuits, such as current mode logic (CML) employing differential inputs.

Abstract: A high-voltage bipolar transistor and fabrication method that comprises a shield electrode (or field-termination electrode) located between bond pads and underlying semiconductor material. The shield electrode is sandwiched between two isolating dielectric layers. High-voltage applied to the bond pad establishes an electric field between the bond pad and the shield electrode), preventing field penetration into and inversion of the underlying semiconductor material. Using this overlapping field-termination structure, low leakage current and high breakdown voltage is maintained in the transistor. The present overlapping field-termination structure provides an effective field termination underneath the bond pads, and because of its overlapping design, provides for a more compact transistor.

Abstract: A doping profile is disclosed for realizing a varactor diode that exhibits a high breakdown voltage V.sub.BR, e.g.,>100 volts, and a capacitance which has a bi-level characteristic. In particular, the capacitance has a C.sub.max level and a C.sub.min level. The doping profile includes two lightly doped regions and, between them, a third region with higher doping. The doping concentrations and widths of the first two regions substantially set the tuning ratio of C.sub.max /C.sub.min, and the doping concentration and width of the third region substantially sets the transition voltage V.sub.TR between the bi-level capacitances.

Abstract: A monolithic microwave integrated circuit is formed by positioning a distributed, transmission-line network over a microwave-device structure. The ground plane of the transmission-line network adjoins an interconnect system of the microwave-device structure and signal lines of the transmission-line network are adapted to communicate with the microwave-device structure through orifices of the ground plane. The invention facilitates the use of low-cost silicon-based transistors in monolithic microwave integrated circuits.