Abstract: A sensor system utilizing flexible electronics for on-line real-time high-sensitivity sampling, monitoring, and analysis of a parameter or analyte of interest in a fluid or in or on a solid is provided. The flexible substrate sensor system comprises a plurality of sensors, a flexible substrate, a network, and a connection between the sensors and the network, wherein the network reads out or collects information from the sensors. The network can be onboard, connected by via a physical connection to the sensors and the flexible substrate, or external to the sensors and flexible substrate, connected via a telemetric or wireless connection to the sensors. The flexible substrate sensor system can be deployed in systems that conduct or distribute fluids or solids, such as distribution systems (municipal water systems, oil or gas pipeline systems), industrial systems (production facilities, piping, and storage systems), and large structures (dams, bridges, walkways, buildings).

Abstract: A sensor system utilizing flexible electronics for on-line real-time high-sensitivity sampling, monitoring, and analysis of a parameter or analyte of interest in a fluid or in or on a solid is provided. The flexible substrate sensor system comprises a plurality of sensors, a flexible substrate, a network, and a connection between the sensors and the network, wherein the network reads out or collects information from the sensors. The network can be onboard, connected by via a physical connection to the sensors and the flexible substrate, or external to the sensors and flexible substrate, connected via a telemetric or wireless connection to the sensors. The flexible substrate sensor system can be deployed in systems that conduct or distribute fluids or solids, such as distribution systems (municipal water systems, oil or gas pipeline systems), industrial systems (production facilities, piping, and storage systems), and large structures (dams, bridges, walkways, buildings).

Abstract: High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.

Abstract: High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.

Abstract: GaN is grown by creating a Ga vapor from a powder, and using an inert purge gas from a source to transport the vapor to a growth site where the GaN growth takes place. In one embodiment, the inert gas is N2, and the powder source is GaN powder that is loaded into source chambers. The GaN powder is congruently evaporated into Ga and N2 vapors at temperatures between approximately 1000 and 1200° C. The formation of Ga liquid in the powder is suppressed by the purging of an inert gas through the powder. The poser may also be isolated from a nitride containing gas provided at the growth cite. In one embodiment, the inert gas is flowed through the powder.

Abstract: The invention provides a composition that is a dispersion made from a Group III nitride, a solvent system, and a dispersant. The dispersion can be used to prepare Group III nitride thin films on a wide range of substrates, for example, glass, silicon, silicon dioxide, silicon nitride, silicon carbide, aluminum nitride, sapphire, and organic polymers. The particle size of the Group III nitride used for producing the thin films can be controlled by adjusting centrifugation of the dispersion and selecting a desired layer of supernatant. The dispersant can be removed from the thin films by calcination. The Group III nitride can contain a dopant. Doped Group III nitride thin films can emit visible light upon irradiation. Green, red, and yellow light emissions result from irradiating erbium-, europium-, and cerium-doped gallium nitride, respectively.

Abstract: High aspect ratio micromachined structures in semiconductors are used to improve power density in Betavoltaic cells by providing large surface areas in a small volume. A radioactive beta-emitting material may be placed within gaps between the structures to provide fuel for a cell. The pillars may be formed of SiC. In one embodiment, SiC pillars are formed of n-type SiC. P type dopant, such as boron is obtained by annealing a borosilicate glass boron source formed on the SiC. The glass is then removed. In further embodiments, a dopant may be implanted, coated by glass, and then annealed. The doping results in shallow planar junctions in SiC.

Abstract: The present invention provides compositions and a novel high-yielding process for preparing high purity Group III nitrides. The process involves heating a Group III metal and a catalytic amount of a metal wetting agent in the presence of a nitrogen source. Group III metals can be stoichiometrically converted into high purity Group III nitride powders in a short period of time. The process can provide multi-gram quantities of high purity Group III nitrides in relatively short reaction times. Detailed characterizations of GaN powder were performed and are reported herein, including morphology and structure by SEM and XRD, optical properties by cathodoluminescence (CL), and Raman spectra to determine the quality of the GaN particles. The purity of GaN powder was found to be greater than 99.9% pure, as analyzed by Glow Discharge Mass Spectrometry (GDMS). Green, yellow, and red light emission can be obtained from doped GaN powders.

Abstract: The present invention provides compositions and a novel high-yielding process for preparing high purity Group III nitrides. The process involves heating a Group III metal and a catalytic amount of a metal wetting agent in the presence of a nitrogen source. Group III metals can be stoichiometrically converted into high purity Group III nitride powders in a short period of time. The process can provide multi-gram quantities of high purity Group III nitrides in relatively short reaction times. Detailed characterizations of GaN powder were performed and are reported herein, including morphology and structure by SEM and XRD, optical properties by cathodoluminescence (CL), and Raman spectra to determine the quality of the GaN particles. The purity of GaN powder was found to be greater than 99.9% pure, as analyzed by Glow Discharge Mass Spectrometry (GDMS). Green, yellow, and red light emission can be obtained from doped GaN powders.

Abstract: Heteropolytype SiC heterojunctions display an abrupt change in polarization leading to 2 dimensional electron or hole gases at the lattice matched interface, depending on the direction of polarization. These channels carry a large amount of electric current which can be modulated with a gate electrode, giving rise to transistor operation in the lateral geometry without the need for n or p type doping. Furthermore, some of these structures display high turn-on voltages which may have applications in terahertz sources and exotic diodes in the transverse geometry.

Abstract: The present invention provides compositions and a novel high-yielding process for preparing high purity Group III nitrides. The process involves heating a Group III metal and a catalytic amount of a metal wetting agent in the presence of a nitrogen source. Group III metals can be stoichiometrically converted into high purity Group III nitride powders in a short period of time. The process can provide multi-gram quantities of high purity Group III nitrides in relatively short reaction times. Detailed characterizations of GaN powder were preformed and are reported herein, including morphology and structure by SEM and XRD, optical properties by cathodoluminescence (CL), and Raman spectra to determine the quality of the GaN particles. The purity of GaN powder was found to be greater than 99.9% pure, as analyzed by Glow Discharge Mass Spectrometry (GDMS). Green, yellow, and red light emission can be obtained from doped GaN powders.

Abstract: A submillimeter wave-generating integrated circuit includes an array of N photoconductive switches biased across a common voltage source and an optical path difference from a common optical pulse of repetition rate f.sub.0 providing a different optical delay to each of the switches. In one embodiment, each incoming pulse is applied to successive ones of the N switches with successive delays. The N switches are spaced apart with a suitable switch-to-switch spacing so as to generate at the output load or antenna radiation of a submillimeter wave frequency f on the order of Nf.sub.0. Preferably, the optical pulse has a repetition rate of at least 10 GHz and N is of the order of 100, so that the circuit generates radiation of frequency of the order of or greater than 1 Terahertz.

Abstract: A novel mutant strain of Morel mushroom has been found to produce the blue pigment indigo by submerged nutrient culture medium containing a carbon and a fermentation in a nitrogen substrate. A red/purple pigment is also produced. The novel strain is Morchella rotunda nov. ES-1 sp. ATCC 20951.

Abstract: A novel mutant strain of Morel mushroom has been found to produce the blue pigment indigo by submerged fermentation in a nutrient culture medium containing a carbon and a nitrogen substrate. A red/purple pigment is also produced. The novel strain is Morchella rotunda nov. ES-1 sp. ATCC 20951.