Patents by Inventor Michael Givens
Michael Givens has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20160358835Abstract: In some embodiments, a semiconductor surface may be effectively passivated by nitridation, preferably using hydrazine, a hydrazine derivative, or a combination thereof. The surface may be the semiconductor surface of a transistor channel region. In some embodiments, native oxide is removed from the semiconductor surface and the surface is subsequently nitrided. In some other embodiments, a semiconductor surface oxide layer is formed at the semiconductor surface and the passivation is accomplished by forming a semiconductor oxynitride layer at the surface, with the nitridation contributing nitrogen to the surface oxide to form the oxynitride layer. The semiconductor oxide layer may be deposited by atomic layer deposition (ALD) and the nitridation may also be conducted as part of the ALD.Type: ApplicationFiled: May 31, 2016Publication date: December 8, 2016Inventors: Qi Xie, Fu Tang, Michael Givens, Petri Raisanen, Jan Willem Maes, Xiaoqiang Jiang
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Patent number: 9478419Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: GrantFiled: December 18, 2013Date of Patent: October 25, 2016Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
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Patent number: 9461134Abstract: In some embodiments, an MIS-type contact structure is formed by passivating the semiconductor surface of a source/drain region with a chalcogen, and subsequently depositing an tunnel layer by first exposing the chalcogen-passivated surface to a metal-organic precursor. Subsequently, deposition of the tunnel layer continues to a desired thickness. Preferably, the metal-organic precursor is part of a first set of ALD precursors and a second set of ALD precursors, which include one or more metal or semimetal precursors, are subsequently used to continue the deposition. For example, the metal-organic precursor may be used to deposit a first portion of the tunnel layer, and an inorganic metal or inorganic semimetal precursor or a different organic metal or organic semimetal precursor may be used to deposit a second portion of the tunnel layer. A metal is subsequently deposited on the tunnel layer, e.g., to form a metal electrode or electrical contact.Type: GrantFiled: May 20, 2015Date of Patent: October 4, 2016Assignee: ASM IP HOLDING B.V.Inventors: Qi Xie, Fu Tang, Petri Raisanen, Jacob Woodruff, Jan Willem Maes, Michael Givens
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Publication number: 20160240373Abstract: In some embodiments, an oxide layer is grown on a semiconductor substrate by oxidizing the semiconductor substrate by exposure to hydrogen peroxide at a process temperature of about 500° C. or less. The exposure to the hydrogen peroxide may continue until the oxide layer grows by a thickness of about 1 ? or more. Where the substrate is a germanium substrate, while oxidation using H2O has been found to form germanium oxide with densities of about 4.25 g/cm3, oxidation according to some embodiments can form an oxide layer with a density of about 6 g/cm3 or more (for example, about 6.27 g/cm3). In some embodiments, another layer of material is deposited directly on the oxide layer. For example, a dielectric layer may be deposited directly on the oxide layer.Type: ApplicationFiled: February 12, 2015Publication date: August 18, 2016Inventors: Fu Tang, Michael Givens, Qi Xie, Jan Willem Maes, Bert Jongbloed, Radko G. Bankras, Theodorus G.M. Oosterlaken, Dieter Pierreux, Werner Knaepen, Harald B. Profijt, Cornelius A. van der Jeugd
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Patent number: 9385164Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.Type: GrantFiled: April 18, 2014Date of Patent: July 5, 2016Assignee: ASM IP HOLDING B.V.Inventors: Qi Xie, Vladimir Machkaoutsan, Jan Willem Maes, Michael Givens, Petri Raisanen
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Publication number: 20160118261Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: October 21, 2015Publication date: April 28, 2016Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 9245742Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: GrantFiled: December 18, 2013Date of Patent: January 26, 2016Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
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Patent number: 9177784Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.Type: GrantFiled: February 18, 2014Date of Patent: November 3, 2015Assignee: ASM IP Holdings B.V.Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
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Publication number: 20150170914Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: ApplicationFiled: December 18, 2013Publication date: June 18, 2015Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
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Publication number: 20150170907Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: ApplicationFiled: December 18, 2013Publication date: June 18, 2015Inventors: Suvi P. Haukka, Fu Tang, Michael Givens, Jan Willem Maes, Qi Xie
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Patent number: 8956939Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. Forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.Type: GrantFiled: April 29, 2013Date of Patent: February 17, 2015Assignee: ASM IP Holding B.V.Inventors: Qi Xie, Vladimir Machkaoutsan, Jan Willem Maes, Michael Givens, Petri Raisanen
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Publication number: 20140322862Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD), doping the resistive switching oxide layer with a metal dopant different from metal forming the metal oxide, and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. In some embodiments, forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.Type: ApplicationFiled: April 18, 2014Publication date: October 30, 2014Applicant: ASM IP Holding B.V.Inventors: Qi Xie, Vladimir Machkaoutsan, Jan Willem Maes, Michael Givens, Petri Raisanen
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Publication number: 20140322885Abstract: A method for forming a resistive random access memory (RRAM) device is disclosed. The method comprises forming a first electrode, forming a resistive switching oxide layer comprising a metal oxide by thermal atomic layer deposition (ALD) and forming a second electrode by thermal atomic layer deposition (ALD), where the resistive switching layer is interposed between the first electrode and the second electrode. Forming the resistive switching oxide may be performed without exposing a surface of the switching oxide layer to a surface-modifying plasma treatment after depositing the metal oxide.Type: ApplicationFiled: April 29, 2013Publication date: October 30, 2014Applicant: ASM IP Holding B.V.Inventors: Qi Xie, Vladimir Machkaoutsan, Jan Willem Maes, Michael Givens, Petri Raisanen
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Publication number: 20140159170Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.Type: ApplicationFiled: February 18, 2014Publication date: June 12, 2014Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
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Patent number: 8728832Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.Type: GrantFiled: May 7, 2012Date of Patent: May 20, 2014Assignee: ASM IP Holdings B.V.Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
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Publication number: 20130292807Abstract: Embodiments related to methods for forming a film stack on a substrate are provided. One example method comprises exposing the substrate to an activated oxygen species and converting an exposed surface of the substrate into a continuous monolayer of a first dielectric material. The example method also includes forming a second dielectric material on the continuous monolayer of the first dielectric material without exposing the substrate to an air break.Type: ApplicationFiled: May 7, 2012Publication date: November 7, 2013Applicant: ASM IP HOLDINGS B.V.Inventors: Petri Raisanen, Michael Givens, Mohith Verghese
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Publication number: 20120158442Abstract: A system and method for generating a dynamic optimal travel solution is disclosed. The method includes receiving an optimal travel solution and receiving consumption data, wherein the consumption data includes an actual market share. The method also includes receiving quality of service index data (QSI), wherein the QSI includes a maximum realistic market share, and generating a dynamic optimal travel solution, in response to the optimal travel solution, the consumption data, and the QSI.Type: ApplicationFiled: December 16, 2010Publication date: June 21, 2012Applicant: American Express Travel Related Services Company, Inc.Inventors: Christa R. Ancri, Michael Givens, Satyendra Hiredesai, Prashant Lodha, Matthew Scott Love, Frank E. Schnur, Sangita R. Shah
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Patent number: 8047706Abstract: Methods and systems for calibrating a temperature control system in a vapor deposition chamber. A temperature sensor senses temperature within a semiconductor processing chamber and generates an output signal. A temperature control system controls a chamber temperature by controlling a heating apparatus based on the output signal. A method includes instructing the control system to target a setpoint temperature, and depositing a layer of material onto a surface in the chamber by a vapor deposition process. A variation of a property of the layer is measured while depositing the layer, the property known to vary cyclically as a thickness of the layer increases. The measured property is allowed to vary cyclically for one or more cycles. If there is a difference between a time period of one or more of the cycles and an expected time period associated with the setpoint temperature, the temperature control system is adjusted based on the difference.Type: GrantFiled: November 18, 2008Date of Patent: November 1, 2011Assignee: ASM America, Inc.Inventors: Matthew G. Goodman, Mark Hawkins, Ravinder Aggarwal, Michael Givens, Eric Hill, Gregory Bartlett
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Publication number: 20100116207Abstract: A reaction chamber having a reaction spaced defined therein, wherein the reaction space is tunable to produce substantially stable and laminar flow of gases through the reaction space. The substantially stable and laminar flow is configured to improve the uniformity of deposition on substrates being processed within the reaction chamber to provide a predictable deposition profile.Type: ApplicationFiled: November 5, 2009Publication date: May 13, 2010Applicant: ASM AMERICA, INC.Inventors: Michael Givens, Matthew Goodman, Mark Hawkins, Brad Halleck, Herbert Terhorst
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Publication number: 20100107974Abstract: A substrate support system comprises a substrate holder for supporting a substrate. The substrate holder comprises an interior portion sized and shaped to extend beneath most or all of a substrate supported on the substrate holder. The substrate holder has mass density that varies, preferably in order to compensate for variations in substrate temperature owing to surface geometry variations of the interior portion, so as to provide a more uniform thermal coupling between the substrate and substrate holder. The substrate holder is preferably configured to be spaced further apart from a substrate at the center than at the outer perimeter.Type: ApplicationFiled: November 6, 2008Publication date: May 6, 2010Applicant: ASM AMERICA, INC.Inventors: Michael Givens, Mike Halpin, Matthew G. Goodman, Keir Kosco