Abstract: An inkjet nozzle array includes a plurality of nozzles. Each nozzle includes a chamber having an input aperture adapted to receive ink into the chamber and an output aperture through which ink is ejected from the chamber. Each chamber further includes a window adapted to receive electromagnetic radiation and operable to heat ink in the chamber responsive to the electromagnetic radiation and eject an ink droplet through the output aperture.

Abstract: An inkjet nozzle array includes a plurality of nozzles. Each nozzle includes a chamber having an input aperture adapted to receive ink into the chamber and an output aperture through which ink is ejected from the chamber. Each chamber further includes a window adapted to receive electromagnetic radiation and operable to heat ink in the chamber responsive to the electromagnetic radiation and eject an ink droplet through the output aperture.

Abstract: An inkjet nozzle array includes a plurality of nozzles. Each nozzle includes a chamber having an input aperture adapted to receive ink into the chamber and an output aperture through which ink is ejected from the chamber. Each chamber further includes a window adapted to receive electromagnetic radiation and operable to heat ink in the chamber responsive to the electromagnetic radiation and eject an ink droplet through the output aperture.

Abstract: The velocity of a printhead scanning across a sheet of paper or other print medium is varied on the basis of whether masking patterns for selectively activating nozzle of the printhead include activations in consecutive pixel locations of the masking pattern. The pixel locations are “firing opportunities” as defined by the maximum firing frequency assigned to the nozzles when the printhead is scanned at a particular velocity. The printhead is moved at that velocity when a masking pattern includes activation in consecutive pixel locations. On the other hand, a higher scanning velocity is available when a constraint is enforced to prevent occasions of firings in consecutive pixel locations. In one embodiment, the constraint is not enforced, but masking patterns are analyzed on a pattern-by-pattern basis to detect those patterns which satisfy the constraint, so that the scanning velocity can be increased during the suitable masking patterns.

Abstract: A method for forming semiconductor devices is provided. A gate stack is formed over a surface of a substrate. A plurality of cycles for forming polymer spacers on sides of the gate stack is provided, where each cycle comprises providing a deposition phase that deposits material on the sides of the polymer spacer and over the surface of the substrate, and providing a cleaning phase that removes polymer over the surface of the substrate and shapes a profile of the deposited material. Dopant is implanted into the substrate using the polymer spacers as a dopant mask. The polymer spacers are removed.

Abstract: A method for forming semiconductor devices is provided. A gate stack is formed over a surface of a substrate. A plurality of cycles for forming polymer spacers on sides of the gate stack is provided, where each cycle comprises providing a deposition phase that deposits material on the sides of the polymer spacer and over the surface of the substrate, and providing a cleaning phase that removes polymer over the surface of the substrate and shapes a profile of the deposited material. Dopant is implanted into the substrate using the polymer spacers as a dopant mask. The polymer spacers are removed.

Abstract: An inlet seal assembly for sealing an injection port member in a chromatography instrument , comprising an injection port member having a raised metal ring, an inlet seal member with an upper surface, a peripheral groove formed in the inlet seal member upper surface, a soft resinous plastic material ring positioned in the peripheral groove opposite the raised metal sealing ring, a reducing nut holding the inlet seal member against the injection port member, and threads connecting the reducing nut to the injection port member whereby to press the soft ring against the raised metal sealing ring to form a seal. The inlet seal assembly also may have a bottom seal between the inlet seal member and the reducing nut. A method of making and using the inlet seal assembly.

Abstract: Geometry and view data relating to a image sequences is transmitted from a server to a client computer. Such enables reconstruction of images by a client with reduced bandwidth for the image stream transmission. A previous-image mesh of coordinates and depth values for selected pixels from the array of pixels in a previous-image is generated at the server. The depth values are transmitted to the client. A change-in-view matrix is generated at the server and transmitted to the client. Such represents the change in viewing parameters between the previous-image and a current-image. The change-in-view matrix is applied to the previous-image mesh to create a current-image mesh, independently at both the server and at the client. Such is applied to the previous-image to generate a predicted current-image. The current-image is generated at the server and a difference between the current-image and the predicted current-image is computed.

Abstract: A method for culling visual data streams. Specifically, one embodiment of the present invention discloses a method for culling view dependent visual data streams for a virtual environment. The method begins by determining a view volume of a viewing participant within the virtual environment. The view volume determines a field-of-view of the viewing participant within the virtual environment. The embodiment of the method then determines a proximity of a representation of an observed object in the virtual environment to the view volume. Thereafter, the embodiment of the method processes a view dependent visual data stream of the observed object only when the representation is within a specified proximity to the view volume.

Abstract: An inlet seal assembly for sealing an injection port member in a chromatography instrument, comprising an injection port member having a bottom surface with a raised metal ring, an inlet seal member with an upper surface, a peripheral groove formed in the upper surface of the inlet seal member, a soft ring made of resinous plastic material positioned in the peripheral groove of the inlet seal member opposite the raised metal sealing ring of the injection port member, a reducing nut holding the inlet seal member against the injection port member, and threads connecting the reducing nut to the injection port member whereby to press the soft ring of the inlet seal member against the raised metal sealing ring of the injection port member to form a seal between the sealing ring and the injection port member. A method of making and using the inlet seal assembly.

Abstract: A method and system for topology adaptation. Specifically, one embodiment of the present invention discloses a method for topology adaptation to support communication in a communicative environment. The embodiment of the method begins by measuring at least one performance metric for a plurality of nodes associated with a plurality of collaborators in the communicative environment. Then, the embodiment of the method dynamically adapts a communication topology for linking the plurality of nodes in the communication network to support communication in the communicative environment based on the at least one performance metric.

Abstract: A method for clustering data streams. Specifically, one embodiment of the present invention discloses a method for clustering data streams for use in a virtual environment. The embodiment of the method begins by determining a cluster of receiving nodes in the virtual environment. Each of the cluster of receiving nodes have associated values for at least one clustering parameter that as a set satisfies a test. Then, the embodiment continues by generating a common data stream based on the clustering parameter. Thereafter, the embodiment sends the common data stream from a sending node to the cluster of receiving nodes.

Abstract: Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.

Abstract: The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing fluorocarbon gas such as CH3F, an oxygen-containing gas such as O2 and an optional carrier gas such as Ar. The dielectric material can comprise silicon dioxide, silicon nitride, silicon oxynitride or various low-k dielectric materials including organic low-k materials. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrates.

Abstract: The invention provides a process for plasma etching silicon carbide with selectivity to an overlapping and/or underlying dielectric layer of material. The etching gas includes a hydrogen-containing fluorocarbon gas such as CH3F, an oxygen-containing gas such as O2 and an optional carrier gas such as Ar. The dielectric material can comprise silicon dioxide, silicon nitride, silicon oxynitride or various low-k dielectric materials including organic low-k materials. In order to achieve a desired selectivity to such dielectric materials, the plasma etch gas chemistry is selected to achieve a desired etch rate of the silicon carbide while etching the dielectric material at a slower rate. The process can be used to selectively etch a hydrogenated silicon carbide etch stop layer or silicon carbide substrates.

Abstract: Method for etching a feature in an integrated circuit wafer with minimized effect of micromasking. The method introduces a flow of etchant gas including a fluorocarbon gas to the wafer, and uses the etchant gas to form a plasma in proximity with at least a portion of the wafer. The plasma is used to etch at least a portion of the feature in the wafer. Disassociation of the fluorocarbon into fluorine and hydrocarbon species performs two functions. The fluorine species prevents or significantly reduces sputtered hardmask components from depositing on the floor of the etched feature during etching. The hydrocarbon species acts to form a passivation layer on the sidewalls of the feature.

Abstract: A particular scrubbing agent/detergent formulation useful in removing contaminated oils and oily components from mill scale generated in a steel mill as disclosed. The formulation is based around medium aliphatic and heavy aromatic naphthas, linear and/or branched alkyl phenols, alkoxylated alkyl phenols, pentaethylene hexamine partial fatty acid amides, and alkyl and/or aromatic acid imidazolines. Optionally, fatty alcohol sulfonates can be used to protect the de-oiled mill scale surfaces from reabsorption of contaminating oily components.