Patents by Inventor Michael Graf
Michael Graf has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8803110Abstract: Beam current is adjusted during ion implantation by adjusting one or more parameters of an ion source. The ion beam is generated or provided by a non-arc discharge based ion source, such as an electron gun driven ion source or an RF driven ion source. A beam current adjustment amount is determined. Then, one or more parameters of the ion source are adjusted according to the determined beam current adjustment amount. The beam current is provided having a modulated beam current.Type: GrantFiled: September 29, 2006Date of Patent: August 12, 2014Assignee: Axcelis Technologies, Inc.Inventors: Michael A. Graf, Edward C. Eisner, William F. DiVergilio, Daniel R. Tieger
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Publication number: 20140138977Abstract: A motor vehicle is provided with a cup holder incorporated into a center console, the cup holder including, but not limited to a front wall, a back wall, two side walls and a base wall, which delimit a receiving space for at least one object, a dividing element, able to be fastened at the upper end region of the receiving space in a dividing position, for dividing the receiving space into a first receiving compartment for a first object and into a second receiving compartment for a second object. The dividing element is constructed from a first part dividing element and a second part dividing element and the first and second part dividing elements are connected pivotably with one another by at least one intermediate joint.Type: ApplicationFiled: October 23, 2013Publication date: May 22, 2014Applicant: GM GLOBAL TECHNOLOGY OPERATIONS LLCInventors: Michael SCHREIBER, Wilhelm SULZBACHER, Michael GRAF, Marian PISKON, Ralf VENINO, Holger THUMS, Stephan WALTER
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Patent number: 8691700Abstract: A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.Type: GrantFiled: September 1, 2011Date of Patent: April 8, 2014Assignee: TEL Epion Inc.Inventors: John J. Hautala, Michael Graf
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Publication number: 20130330704Abstract: In various embodiments, a method for providing online education is disclosed. The method may comprise receiving first data via a first user interface (“UI”) comprising a parent student portal (“PSP”), receiving second data via a second user interface (“UI”) comprising a learning management system (“LMS”), receiving third data via a third user interface (“UI”) comprising a student information system (“SIS”), and/or storing the first data, the second data, and the third data to a central data repository (“CDR”). In various embodiments, the method may further comprise enabling customization of at least one of the first UI, the second UI, and the third UI by an education provider. Further still, the method may comprise filtering data based upon a filter criterion, and/or communicating a notification to a plurality of users based upon the filtering.Type: ApplicationFiled: June 12, 2013Publication date: December 12, 2013Inventors: Damian Creamer, Michael Graf, Curtis Despain, Skyler Todd, Tiffiny Scott, Alex Bowen
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Patent number: 8444196Abstract: A console is provided, in particular a central console for a vehicle, having a rail pair for the essentially horizontally displaceable accommodation of inserts of the console between the rails of the rail pair in guides of the rails, as well as a storage space between the inserts and the floor of the vehicle. For such a console, it is provided that the rails are implemented as freestanding brackets, the brackets at least being mounted in the floor of the vehicle, an essentially horizontally situated section of the particular bracket, which is distal from the floor, having at least one guide. Such a console offers high flexibility in regard to the storage space usable in this area with structurally simple design and may be advantageously used both with and also without the inserts in this aspect.Type: GrantFiled: June 22, 2007Date of Patent: May 21, 2013Assignee: GM Global Technology Operations LLCInventors: Stefan Arndt, Matthias Blanck, Andreas Dorhoefer, Uwe Fett, Michael Graf, Michael Renkel, Kurt Beyer
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Publication number: 20130059449Abstract: A method of etching a substrate is described. In one embodiment, the method includes preparing a mask layer having a pattern formed therein on or above at least a portion of a substrate, etching a feature pattern into the substrate from the pattern in the mask layer using a gas cluster ion beam (GCIB), and controlling a sidewall profile of the feature pattern etched into the substrate by adjusting a beam divergence of the GCIB.Type: ApplicationFiled: September 1, 2011Publication date: March 7, 2013Applicant: TEL EPION INC.Inventors: John J. HAUTALA, Michael GRAF
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Patent number: 8378414Abstract: By aligning the primary flat of a wafer with a (100) plane rather than a (110) plane, devices can be formed with primary currents flowing along the (100) plane. In this case, the device will intersect the (111) plane at approximately 54.7 degrees. This intersect angle significantly reduces stress propagation/relief along the (111) direction and consequently reduces defects as well as leakage and parasitic currents. The leakage current reduction is a direct consequence of the change in the dislocation length required to short the source-drain junction. By using this technique the leakage current is reduced by up to two orders of magnitude for an N-channel CMOS device.Type: GrantFiled: June 30, 2011Date of Patent: February 19, 2013Assignee: Atmel CorporationInventors: Gayle W. Miller, Volker Dudek, Michael Graf
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Patent number: 8338806Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.Type: GrantFiled: May 5, 2010Date of Patent: December 25, 2012Assignee: TEL Epion Inc.Inventors: Michael Graf, Robert K. Becker, Christopher T. Reddy, Noel Russell
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Patent number: 8304033Abstract: Disclosed are methods of operation to grow, modify, deposit, or dope a layer upon a substrate using a multi-nozzle and skimmer assembly for introducing a process gas mixture, or multiple process gases mixtures, in a gas cluster ion beam (GCIB) system. Also disclosed is a method of forming a shallow trench isolation (STI) structure on a substrate, for example, an SiO2 STI structure, using a multiple nozzle system with two separate gas supplies, for example providing a silicon-containing gas and an oxygen-containing gas.Type: GrantFiled: April 23, 2009Date of Patent: November 6, 2012Assignee: TEL Epion Inc.Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
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Patent number: 8271400Abstract: A hardware pay-per-use system and corresponding method allow computer system operators to tailor their hardware utilization to more closely match changing customer demands. The hardware pay-per-use system includes one or more hardware products and a metering mechanism coupled to at least one of the hardware products. The metering mechanism includes a hardware device separate from the hardware products. The metering mechanism acquires metrics data from the hardware products, the metrics data related to an operation at the hardware products. The metering mechanism determines data to report on the operation of the hardware products. A usage repository coupled to the metering mechanism receives the determined data and generates usage reports related to the operation of the hardware products.Type: GrantFiled: January 15, 2002Date of Patent: September 18, 2012Assignee: Hewlett-Packard Development Company, L.P.Inventors: Robert C. Lehr, Arif Sardar, Matthew Lane, Winthrop Reis, Cynthia Alderson, Patrick Allaire, Richard Birrell, Christopher K Buss, Paula Zimon Clawson, Michael Graf, Arthur F. Green, Monica Lasgoity, Susan C. Neidhart, Anthony Keith Towles, Carol Uno
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Patent number: 8193513Abstract: A hybrid ion source, comprising a source body configured to create plasma therein, from a first material, wherein the first material comprises one of monatomic gases, small molecule gases, large molecule gases, reactive gases, and solids, a low power plasma generation component operably associated with the source body, a high power plasma generation component operably associated with the source body and an extraction aperture configured to extract ions of the ion plasma from the source body.Type: GrantFiled: July 31, 2008Date of Patent: June 5, 2012Assignee: Axcelis Technologies, Inc.Inventors: William F. DiVergilio, Daniel R. Tieger, Michael A. Graf
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Patent number: 8173980Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a vacuum vessel that has an interior and is configured to support the substrate therein, and at least one nozzle for forming and emitting a gas cluster beam. The at least one nozzle is configured to direct the gas cluster beam within the vacuum vessel toward the substrate. An ionizer is positioned to ionize the gas cluster beam to form the GCIB. A main gas supply of the system is in fluid communication with the at least one nozzle for supplying gas to the nozzle. The system also includes a plasma-generating apparatus that communicates with the interior of the vacuum vessel and which is configured to receive a cleaning gas and selectively emit plasma for cleaning the interior of the vacuum vessel.Type: GrantFiled: May 5, 2010Date of Patent: May 8, 2012Assignee: TEL Epion Inc.Inventors: Michael Graf, Andrej Mitrovic
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Patent number: 8097860Abstract: A gas cluster ion beam (GCIB) processing system using multiple nozzles for forming and emitting at least one GCIB and methods of operating thereof are described. The GCIB processing system may be configured to treat a substrate, including, but not limited to, doping, growing, depositing, etching, smoothing, amorphizing, or modifying a layer thereupon. Furthermore, the GCIB processing system may be operated to produce a first GCIB and a second GCIB, and to irradiate a substrate simultaneously and/or sequentially with the first GCIB and second GCIB.Type: GrantFiled: March 26, 2010Date of Patent: January 17, 2012Assignee: TEL Epion Inc.Inventors: Martin D. Tabat, Matthew C. Gwinn, Robert K. Becker, Avrum Freytsis, Michael Graf
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Patent number: 8093640Abstract: A method and system for fabricating a stacked capacitor and a DMOS transistor are disclosed. In one aspect, the method and system include providing a bottom plate, an insulator, and an additional layer including first and second plates. The insulator covers at least a portion of the bottom plate and resides between the first and second top plates and the bottom plate. The first and second top plates are electrically coupled through the bottom plate. In another aspect, the method and system include forming a gate oxide. The method and system also include providing SV well(s) after the gate oxide is provided. A portion of the SV well(s) resides under a field oxide region of the device. Each SV well includes first, second, and third implants having a sufficient energy to provide the portion of the SV well at a desired depth under the field oxide region without significant additional thermal processing. A gate, source, and drain are also provided.Type: GrantFiled: July 13, 2009Date of Patent: January 10, 2012Assignee: Atmel CorporationInventors: Stefan Schwantes, Volker Dudek, Michael Graf, Alan Renninger, James Shen
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Patent number: 8089052Abstract: An ion implanter system including an ion source for use in creating a stream or beam of ions. The ion source has an ion source chamber housing that at least partially bounds an ionization region for creating a high density concentration of ions within the chamber housing. An ion extraction aperture of desired characteristics covers an ionization region of the chamber. In one embodiment, a movable ion extraction aperture plate is moved with respect to the housing for modifying an ion beam profile. One embodiment includes an aperture plate having at least elongated apertures and is moved between at least first and second positions that define different ion beam profiles. A drive or actuator coupled to the aperture plate moves the aperture plate between the first and second positions. An alternate embodiment has two moving plate portions that bound an adjustable aperture.Type: GrantFiled: April 14, 2009Date of Patent: January 3, 2012Assignee: Axcelis Technologies, Inc.Inventors: Daniel Tieger, William DiVergilio, Edward Eisner, Michael Graf
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Publication number: 20110272594Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a nozzle for forming and emitting gas cluster beams through a nozzle outlet, and a stagnation chamber that is located upstream of and adjacent the nozzle. The stagnation chamber has an inlet, and the nozzle is configured to direct a single gas cluster beam toward the substrate. An ionizer is positioned downstream of the outlet and is configured to ionize the gas cluster beam to form the GCIB. The system also includes a gas supply that is in fluid communication with the inlet of the stagnation chamber, and which includes a gas source and a valve located between the gas source and the nozzle for controlling flow of a gas between the gas source and the nozzle.Type: ApplicationFiled: May 5, 2010Publication date: November 10, 2011Applicant: TEL Epion Inc.Inventors: Michael Graf, Robert K. Becker, Christopher T. Reddy, Noel Russell
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Publication number: 20110272593Abstract: A processing system is provided for irradiating a substrate with a gas cluster ion beam (GCIB). The system includes a vacuum vessel that has an interior and is configured to support the substrate therein, and at least one nozzle for forming and emitting a gas cluster beam. The at least one nozzle is configured to direct the gas cluster beam within the vacuum vessel toward the substrate. An ionizer is positioned to ionize the gas cluster beam to form the GCIB. A main gas supply of the system is in fluid communication with the at least one nozzle for supplying gas to the nozzle. The system also includes a plasma-generating apparatus that communicates with the interior of the vacuum vessel and which is configured to receive a cleaning gas and selectively emit plasma for cleaning the interior of the vacuum vessel.Type: ApplicationFiled: May 5, 2010Publication date: November 10, 2011Applicant: TEL Epion Inc.Inventors: Michael Graf, Andrej Mitrovic
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Publication number: 20110260250Abstract: By aligning the primary flat of a wafer with a (100) plane rather than a (110) plane, devices can be formed with primary currents flowing along the (100) plane. In this case, the device will intersect the (111) plane at approximately 54.7 degrees. This intersect angle significantly reduces stress propagation/relief along the (111) direction and consequently reduces defects as well as leakage and parasitic currents. The leakage current reduction is a direct consequence of the change in the dislocation length required to short the source-drain junction. By using this technique the leakage current is reduced by up to two orders of magnitude for an N-channel CMOS device.Type: ApplicationFiled: June 30, 2011Publication date: October 27, 2011Applicant: ATMEL CORPORATIONInventors: Gayle W. Miller, Volker Dudek, Michael Graf
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Patent number: 7973333Abstract: A lateral DMOS-transistor is provided that includes a MOS-diode made of a semi-conductor material of a first type of conductivity, a source-area of a second type of conductivity and a drain-area of a second type of conductivity which is separated from the MOS-diode by a drift region made of a semi-conductor material of a second type of conductivity which is at least partially covered by a dielectric gate layer which also covers the semi-conductor material of the MOS-diode. The dielectric gate-layer comprises a first region of a first thickness and a second region of a second thickness. The first region covers the semi-conductor material of the MOS-diode and the second region is arranged on the drift region. A transition takes place from the first thickness to the second thickness such that an edge area of the drift region which is oriented towards the MOS-diode is arranged below the second area of the gate layer. The invention also relates to a method for the production of these types of DMOS-transistors.Type: GrantFiled: April 2, 2007Date of Patent: July 5, 2011Assignee: Telefunken Semiconductors GmbH & Co. KGInventors: Franz Dietz, Volker Dudek, Thomas Hoffmann, Michael Graf, Stefan Schwantes
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Publication number: 20110143047Abstract: The invention relates to an adhesion-promoting additive for an ink for imprinting glass comprising at least one silane, and at least one reticulating agent based on an organic ester of o-silica.Type: ApplicationFiled: June 10, 2009Publication date: June 16, 2011Applicant: DURST PHOTOTECHNIK DIGITAL TECHNOLOGY GMBHInventors: Stefan Kappaun, Emil J. W. List, Michael Graf