Abstract: A sparker array includes a plurality of sparker sources of sound and light emissions, the plurality of sparker sources arranged in a geometric pattern with respect to a region, the array configured to deliver a maximal acoustic output to the region. Sparker sources may include reflectors. A single electrical source to drive a sparker array may be employed. A sparker system may include two or more sparker arrays. A time delay may be employed to trigger electrical circuits of the sparker arrays. Sparker arrays may be used to deliver shock waves with increased operational life, consistency and efficacy for specific applications.

Abstract: A reflector employs materials and design features that can transfer both light and sound emission simultaneously, from sources to planes or volumes, in an efficient and controlled manner. Compound orthogonal parabolic reflectors employ an extension onto conventional orthogonal parabolic reflectors to efficiently deliver light and/or sound to a focal volume or surface. The extension shapes the output, and can provide inflow and outflow to the focal region, along with a brush. Pulsed sources may be employed, which may emit light, sound or both light and sound, may erode and may be wire initiated with the wire replaced after each pulse by a wire feed.

Abstract: A reflector employs materials and design features that can transfer both light and sound emission simultaneously, from sources to planes or volumes, in an efficient and controlled manner. Compound orthogonal parabolic reflectors employ an extension onto conventional orthogonal parabolic reflectors to efficiently deliver light and/or sound to a focal volume or surface. The extension shapes the output, and can provide inflow and outflow to the focal region, along with a brush. Pulsed sources may be employed, which may emit light, sound or both light and sound, may erode and may be wire initiated with the wire replaced after each pulse by a wire feed.

Abstract: A high intensity surface discharge pulsed light source system includes a dielectric substrate, a first electrode near the dielectric substrate, a second electrode spaced from the first electrode and near the dielectric substrate, with containment for a discharge gas. The system is electrically powered and cooled from a single end. The discharge volume is sealed from the environment for long operational life, and the surface material chosen to allow for high intensity operation. Reflective coatings are employed to increase the light available for practical use. A pulsed electric discharge circuit provides practical operation for long and safe operation.

Abstract: Embodiments of an intelligent modeling method and system monitor and perform analysis of semiconductor processing equipment as well as predict future states of that equipment based on the analysis, predict failures of the semiconductor processing equipment and/or determine equipment maintenance schedules.

Abstract: Ultrasonic transducers and tomographic techniques determine the temperature of a semiconductor substrate holder at all points on the substrate holder, thereby allowing comprehensive real-time control of the temperature of the substrate holder during a process, such as a semiconductor wafer etching process. An apparatus for measuring temperatures of respective portions of a substrate holder that supports a substrate (e.g., a semiconductor wafer) on which a process (e.g., an etching process) is carried out, and for controlling the temperatures of the respective portions in response to the measured temperatures, includes: an arrangement of at least one ultrasonic transducer arranged and configured to transmit ultrasonic energy through the substrate holder, and a data processor configured to calculate, during the process, the temperatures of the respective portions of the substrate holder based on respective propagation time delays of the ultrasonic energy through the respective portions.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) into high aspect ratio submicron features (11) on semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). The modes operate at different power and pressure parameters. Pressure of more than 50 mTorr, for example, is used for sputtering material from a target while pressure of less than a few mTorr, for example, is used to etch. Bias power on the substrate is an order of magnitude higher for etching, producing several hundred volt bias for etching, but only a few tens of volts for deposition. The alternating etching modes remove deposited material that overhangs edges of features on the substrate, removes some of the deposited material from the bottoms (15) of the features, and resputters the removed deposited material onto sidewalls (16) of the features. The substrate (21) is cooled during deposition and etching, and particularly during etching to substantially below 0° C.

Abstract: A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.

Abstract: An iPVD apparatus (20) is programmed to deposit material (10) into high aspect ratio submicron features (11) on semiconductor substrates (21) by cycling between deposition and etch modes within a vacuum chamber (30). The modes operate at different power and pressure parameters. Pressure of more than 50 mTorr, for example, is used for sputtering material from a target while pressure of less than a few mTorr, for example, is used to etch. Bias power on the substrate is an order of magnitude higher for etching, producing several hundred volt bias for etching, but only a few tens of volts for deposition. The alternating etching modes remove deposited material that overhangs edges of features on the substrate, removes some of the deposited material from the bottoms (15) of the features, and resputters the removed deposited material onto sidewalls (16) of the features. The substrate (21) is cooled during deposition and etching, and particularly during etching to substantially below 0° C.

Abstract: Ultrasonic transducers and tomographic techniques determine the temperature of a semiconductor substrate holder at all points on the substrate holder, thereby allowing comprehensive real-time control of the temperature of the substrate holder during a process, such as a semiconductor wafer etching process. An apparatus for measuring temperatures of respective portions of a substrate holder that supports a substrate (e.g., a semiconductor wafer) on which a process (e.g., an etching process) is carried out, and for controlling the temperatures of the respective portions in response to the measured temperatures, includes: an arrangement of at least one ultrasonic transducer arranged and configured to transmit ultrasonic energy through the substrate holder, and a data processor configured to calculate, during the process, the temperatures of the respective portions of the substrate holder based on respective propagation time delays of the ultrasonic energy through the respective portions.

Abstract: A plasma processing system efficiently couples radiofrequency energy to a plasma confined within a vacuum processing space inside a vacuum chamber. The plasma processing system comprises a frustoconical dielectric window, an inductive element disposed outside of the dielectric window, and a frustoconical support member incorporated into an opening in the chamber wall. The support member has a frustoconical panel that mechanically supports a frustoconical section of the dielectric window. The dielectric window is formed of a dielectric material, such as a ceramic or a polymer, and has a reduced thickness due to the mechanical support provided by the support member. The processing system may include a gas source positioned above the substrate support for introducing the process gas into the vacuum processing space.

Abstract: A plasma processing system having a plasma source that efficiently couple radiofrequency energy to a plasma within a vacuum processing space of a vacuum chamber. The plasma source comprises a dielectric trough, an inductive element, and a pair of slotted deposition shields. A chamber wall of the vacuum chamber includes an annular opening that receives the dielectric trough. The trough projects into the vacuum processing space to immerse the inductive element within the plasma. The spatial distribution of the RF energy inductively coupled from the inductive element to the plasma may be tailored by altering the slots in the slotted deposition shields, the configuration of the inductive element, and the thickness or geometry of the trough. The efficient inductive coupling of radiofrequency energy is particularly effective for creating a spatially-uniform large-area plasma for the processing of large-area substrates.