Patents by Inventor Michael H. Kriegel

Michael H. Kriegel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Low noise polycrystalline semiconductor resistors by hydrogen passivation
    Patent number: 4602421
    Abstract: Low noise polycrystalline silicon resistors are fabricated in the following sequence:(1) deposit an appropriate thickness of polysilicon (e.g. 400 nm) on top of an oxidized wafer(2) resistor doping by ion implantation (e.g. phosphorous)(3) heavy doping of the end-contact regions of the polysilicon resistor by high-dose ion implantation(4) patterning the polysilicon resistor(5) oxidation/annealing the polysilicon resistor(6) open contacts to the polysilicon resistor(7) aluminum metallization to form ohmic contacts(8) a long (e.g. 3 hours) low temperature (e.g. at 375.degree.) pure hydrogen annealing to passivate the interface states in the polysilicon resistor. Polyresistors processed this way have a noise figure that is about a factor of three lower than samples processed otherwise. The low temperature post metallization annealing in pure hydrogen passivates the interfaces of polyresistors, reducing the l/f noise normally generated therein.
    Type: Grant
    Filed: April 24, 1985
    Date of Patent: July 29, 1986
    Assignee: The United States of America as represented by the Secretary of the Air Force
    Inventors: Joseph Y. Lee, Michael H. Kriegel, Thomas Y. Chuh