Abstract: A food slicing system is provided comprising: a cutting surface extending between first and second ends. A slicing element is provided having a first end pivotably coupled to the cutting surface adjacent to the first end of the cutting surface. A pivot arm includes a first end pivotably coupled to the cutting surface adjacent to the first end of the cutting surface, wherein both the pivot arm and the slicing element have respective lengths extending toward a second end of the cutting surface. A tensioner device couples a second end of the slicing element to a second end of the pivot arm, wherein the tensioner device is configured to allow for adjustment of an amount of tension applied to the slicing element.

Abstract: A method for improving adhesion of a self-adhesive silicone on a surface of a thermoplastic material. The surface of the thermoplastic material is irradiated with UV-C radiation. A composite of a thermoplastic and a silicone applied to a surface of the thermoplastic, wherein the thermoplastic is irradiated by the method using UV-C radiation.

Abstract: Method for producing a multicoat coating comprises: applying a primer-surfacer coat (I) to an optionally pretreated substrate, curing coat (I), applying a basecoat (II) to coat (I), optionally curing the basecoat (II), applying a clearcoat (III) to basecoat (II), and curing basecoat (II) and/or clearcoat (III), wherein coat (I) is obtained by applying a nonaqueous, solventborne coating material comprising by weight: at least 20% of at least one organic solvent, at least 8% of at least one first polyester (A1), having a glass transition temperature of at least 20° C. and an acid number of 0 to 40 mg KOH/g; at least 8% by weight of at least one second polyester (A2), different from (A1) and having a glass transition temperature of not more than 10° C.; at least one crosslinker (B); and at least 8% of one or more fillers and/or pigments (C).

Abstract: A method and an arrangement for providing chalcogens as thin layers on substrates, in particular on planar substrates prepared with precursor layers and composed of any desired materials, preferably on substrates composed of float glass, is achieved by forming an inlet- and outlet-side gas curtain for an oxygen-tight closure of a transport channel in a vapour deposition head, introducing an inert gas into the transport channel for displacing atmospheric oxygen, introducing one or more substrates to be coated, the substrates being temperature-regulated to a predetermined temperature, into the transport channel, introducing a chalcogen vapour/carrier gas mixture from a source into the transport channel at the vapour deposition head above the substrates and forming a selenium layer on the substrates by PVD at a predetermined pressure, and removing the substrates after a predetermined process time has elapsed.

Abstract: A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by a collar, which is attached to the process tube and against which a door rests sealingly.

Abstract: A device for doping, deposition or oxidation of semiconductor material at low pressure in a process tube, is provided with a tube closure as well as devices for supplying and discharging process gases and for generating a negative pressure in the process tube. A closure of the process chamber that is gas tight with respect to the process gases and the vacuum tight seal of the end of the tube closure are spatially separated from each other in relation to the atmosphere and are arranged on a same side of the process tube in such a manner that a bottom of a stopper, sealing the process chamber, rests against a sealing rim of the process tube and the tube closure end is sealed vacuum tight by a collar, which is attached to the process tube and against which a door rests sealingly.

Abstract: Electrocoat materials comprising bismuth compounds, further comprising (A) at least one self-crosslinking and/or externally crosslinking binder containing (potentially) cationic or anionic groups and reactive functional groups which (i) with themselves or with complementary reactive functional groups in the self-crosslinking binder, or (ii) in the case of the externally crosslinking binder, with complementary reactive functional groups present in crosslinking agents (B) are able to undergo thermal crosslinking reactions, (B) if desired, at least one crosslinking agent comprising the complementary reactive functional groups, and (C) bismuth subsalicylate of empirical formula C7H5O4Bi.

Abstract: A method and device for separation of chalcogens from waste gases in process installations are provided so that complete and reliable removal of chalcogens occurs continuously during nonstop operation of the process installation in the most effective manner possible. The process installation is connected via a pipeline to an input connector of the device for separation of chalcogens arranged outside of the process installation. The pipeline and the input connector have a heat connection to the process chamber. The device for separation of chalcogens is provided with an outlet connector as well as a gas outlet is equipped with a cooling device so that the input connector is excluded from cooling.

Abstract: The invention relates to a method and an arrangement for tempering SiC wafers. The invention is to provide a method and an arrangement for tempering SiC wafers for generating a sufficient silicon partial pressure in the processing chamber and while reducing the operating costs. This is achieved in that a source for at least vaporized or gaseous silicon to increase the silicon partial pressure is connected to the processing chamber (2) for receiving at least one wafer (3), wherein said source is a vaporizer (4) having liquefied silicon fragments (11), to which a carrier gas can be supplied, which generates a gas flow via a silicone melt, and the vaporizer (4) is connected via a pipeline (5) to the processing chamber (2) or is disposed therein.

Abstract: An arrangement for the contactless transport of flat substrates, particularly of square or rectangular plates having high breakability along a transport path, is provided. With the arrangement, the substrates can be reliably accelerated, transported and slowed down even in the overhead position, independently from the ambient atmosphere and ambient temperature. This is achieved by a plurality of Bernoulli grippers being arranged on both sides along a transport path at a distance behind each other such that the substrate to be transported covers the Bernoulli grippers on both sides of the transport path only partially. The Bernoulli grippers each create a gas flow rotating clockwise or counterclockwise relative to the substrate and directed in the transport direction, wherein the Bernoulli grippers of each pair create each a differently rotating gas flow. Mechanical lateral guide elements are provided on both sides of the transport path.

Abstract: A method for controlling process gas concentration for treatment of substrates in a process space in which a medium is evaporated in a bubbler by bubbles of a carrier gas passed through the medium is achieved by producing a stipulated constant internal pressure in the bubbler and subsequent introduction of the carrier gas into the bubbler with simultaneous temperature control of the medium being evaporated within the bubbler to set a stipulated vapor pressure.

Abstract: An accelerated and simple-to-realize fast method for thermally converting metallic precursor layers on any desired substrates into semiconducting layers, and also an apparatus suitable for carrying out the method and serving for producing solar modules with high efficiency are provided. The substrates previously prepared at least with a metallic precursor layer are heated in a furnace, which is segmented into a plurality of temperature regions, at a pressure at approximately atmospheric ambient pressure in a plurality of steps in each case to a predetermined temperature up to an end temperature between 400° C. and 600° C. and are converted into semiconducting layers whilst maintaining the end temperature in an atmosphere comprising a mixture of a carrier gas and vaporous chalcogens.

Abstract: A method and an arrangement for providing chalcogens as thin layers on substrates, in particular on planar substrates prepared with precursor layers and composed of any desired materials, preferably on substrates composed of float glass is achieved by forming an inlet- and outlet-side gas curtain for an oxygen-tight closure of a transport channel in a vapour deposition head, introducing an inert gas into the transport channel for displacing atmospheric oxygen, introducing one or more substrates to be coated, the substrates being temperature-regulated to a predetermined temperature, into the transport channel, introducing a chalcogen vapour/carrier gas mixture from a source into the transport channel at the vapour deposition head above the substrates and forming a selenium layer on the substrates by PVD at a predetermined pressure, and removing the substrates after a predetermined process time has elapsed.

Abstract: To provide a method and an arrangement for heat treatment of substrates which allow continuously adjustable cooling rates over a wide temperature range with simultaneously largely homogeneous temperature distribution over the area of the heating/cooling plate, a cooling/heating plate is provided containing a multiplicity of cooling/heating pipes running parallel to one another. Each cooling/heating pipe comprises an outer pipe, an inner pipe which can carry a flow, and an interspace between them which can carry a flow. Each inner pipe is connected to a supply line for water and each interspace is connected to a supply line for air, with water and air being routed simultaneously though the cooling/heating plate.

Abstract: An assembly is provided for purifying toxic gases from production processes by thermal conversion in a reactor chamber and subsequent treatment of reaction products with a sorption agent in a washing device in order to bind water-soluble reaction products and to elute solid reaction products. The reactor chamber has an external wall and an internal wall, the internal wall tapering at its base in the form of a funnel at a predetermined angle. A unit for thermal treatment of toxic gases is located on the reactor chamber, sealing the top of the chamber. An inner face of the internal wall of the reactor chamber comprises a film of water flowing downwards in a uniform manner. The exterior of the internal wall is surrounded by a cloak of water. A waste gas outlet and a connection for a water circuit are located at the lower end of the tapering internal wall.

Abstract: Electrocoat materials comprising bismuth compounds, further comprising (A) at least one self-crosslinking and/or externally crosslinking binder containing (potentially) cationic or anionic groups and reactive functional groups which (i) with themselves or with complementary reactive functional groups in the self-crosslinking binder, or (ii) in the case of the externally crosslinking binder, with complementary reactive functional groups present in crosslinking agents (B) are able to undergo thermal crosslinking reactions, (B) if desired, at least one crosslinking agent comprising the complementary reactive functional groups, and (C) bismuth subsalicylate of empirical formula C7H5O4Bi.

Abstract: A continuous vacuum system for processing substrates has an inlet air lock, an outlet air lock, at least one process chamber, and a device for conveying the substrates through the continuous system. To create a continuous system having a compact design and high throughput for plasma-enhanced treatment of substrates at a reduced pressure, which ensures a simple, rapid and secure handling of the substrates with a high capacity of the substrate carrier, the conveying device has at least one plasma boat in which the substrates are arranged on a base plate in a three-dimensional stack in at least one plane at a predefined distance from one another with intermediate carriers in between. At least the intermediate carriers are made of graphite or another suitable electrically conductive material and can be acted upon electrically with an alternating voltage via an electric connection.