Abstract: A passive component includes a body including a dummy portion and a device portion. The dummy portion and the device portion extend in a first direction and are arranged such that a longitudinal axis of the device portion is offset from a longitudinal axis of the body in a second direction perpendicular to the first direction. The passive component further includes first and second electrical contacts on at least one surface of the body.

Abstract: A passive component includes a body including a dummy portion and a device portion. The dummy portion and the device portion extend in a first direction and are arranged such that a longitudinal axis of the device portion is offset from a longitudinal axis of the body in a second direction perpendicular to the first direction. The passive component further includes first and second electrical contacts on at least one surface of the body.

Abstract: A tunnel junction structure comprises an n-type tunnel junction layer of a first semiconductor material, a p-type tunnel junction layer of a second semiconductor material and a tunnel junction between the tunnel junction layers. The first semiconductor material includes gallium (Ga), nitrogen (N), arsenic (As) and is doped with a Group VI dopant. The probability of tunneling is significantly increased, and the voltage drop across the tunnel junction is consequently decreased, by forming the tunnel junction structure of materials having a reduced difference between the valence band energy of the material of the p-type tunnel junction layer and the conduction band energy of the n-type tunnel junction layer. Doping the first semiconductor material n-type with a Group VI dopant maximizes the doping concentration in the first semiconductor material, thus further improving the probability of tunneling.

Abstract: A laser, a p-spacer, an n-spacer, and an active region is disclosed. The p-spacer has a p-doped region and an undoped region, and the n-spacer has an n-doped region and an undoped region. The active region is located between the undoped regions of the p-spacer and the n-spacer. The active region generates light of wavelength &lgr; through the recombination of holes and electrons. The undoped region of the p-spacer has a thickness that is different from that of the undoped region of the n-spacer. In one embodiment, the p-spacer has a thickness greater than the n-spacer. If the laser is a VCSEL, the p-spacer and the n-spacer form an optical cavity having a thickness Lc=(n+1)&lgr;/2, n is an integer greater than 2. In another embodiment, the cavity has a standing electromagnetic wave and wherein the active layer is located at a maximum of the standing electromagnetic wave.